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arXiv:0906.1037 · Journal of the Physical Society of Japan

Fractional Quantum Hall Effects in Graphene and Its Bilayer

Naokazu Shibata, Kentaro Nomura

Published Sep 25, 2009• 49 citations
arXivHTMLPDF

Abstract

Single-layer and Bilayer of graphene are new classes of two-dimensional electron systems with unconventional band structures and valley degrees of freedom. The ground states and excitations in the integer and fractional quantum Hall regimes are investigated on torus and spherical geometries with the use of the density matrix renormalization group (DMRG) method. At nonzero Landau level indices, the ground states at effective filling factors 1, 1/3, 2/3 and 2/5 are valley polarized both in single-layer and bilayer graphenes. We examine the elementary charge excitations which could couple with the valley degrees of freedom (so called valley skyrmions). The excitation gaps are calculated and extrapolated to the thermodynamic limit. The largest excitation gap at effective filling 1/3 is obtained in bilayer graphene, which is a good candidate for experimental observation of fractional quantum Hall effect.

DOI
10.1143/jpsj.78.104708

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Single-layer and Bilayer of graphene are new classes of two-dimensional electron systems with unconventional band structures and valley degrees of freedom. The ground states and excitations in the integer and fractional quantum Hall regimes are investigated on torus and spherical geometries with the use of the density matrix renormalization group (DMRG) method. At nonzero Landau level indices, the ground states at effective filling factors 1, 1/3, 2/3 and 2/5 are valley polarized both in single-layer and bilayer graphenes. We examine the elementary charge excitations which could couple with the valley degrees of freedom (so called valley skyrmions). The excitation gaps are calculated and extrapolated to the thermodynamic limit. The largest excitation gap at effective filling 1/3 is obtained in bilayer graphene, which is a good candidate for experimental observation of fractional quantum Hall effect.
We investigate even-denominator fractional quantum Hall (EDFQH) states in monolayer graphene, focusing on the experimentally observed filling fractions ν=1/2ν= 1/2ν=1/2 and ν=1/4ν= 1/4ν=1/4. Owing to the approximate SU(4) symmetry arising from spin and valley degrees of freedom, graphene hosts a rich variety of multi-component fractional quantum Hall states with different polarization configurations. Using the Chern-Simons composite fermion framework for SU(4) systems, we construct candidate variational wave functions corresponding to distinct spin, valley, and mixed polarization states. The ground-state energies of these states are evaluated numerically using the Coulomb interaction in spherical geometry. By comparing energies across different polarization sectors, we identify the energetically favored configurations at ν=1/2ν= 1/2ν=1/2 and ν=1/4ν= 1/4ν=1/4. Our variational energy comparison suggests that the energetically favored candidate states correspond to multi-component correlated quantum Hall liquids. Within the restricted family of trial states considered here, these states differ from a simple composite-fermion Fermi-sea description. These findings provide insight into the role of valley polarization and SU(4) symmetry in stabilizing even-denominator fractional quantum Hall states in graphene.
Abstract Fractional quantum Hall states have been observed at filling factor ν = 3/4 in GaAs hole system and bilayer graphene. In theoretical bootstrap analysis, it was revealed that non-Abelian topological orders with Ising anyons can be realized at ν = 3/4, which exhibit 12 fold ground state degeneracy on the torus. The properties of ν = 3/4 states can be analyzed using two complementary approaches. In the first one, they are treated as particle–hole conjugate of ν = 1/4 Moore–Read types states. In the second one, they are mapped to composite fermions with reverse flux attachment at effective filling factor 3/2, whose integral part realizes an integer quantum Hall state and the fractional part realizes ν = 1/2 Moore–Read type states. For bilayer graphene with appropriate Landau level mixing, numerical calculations have found 12 quasi-degenerate ground states on the torus at ν = 3/4. Chiral graviton spectral functions of these states have one low energy peak with negative chirality and one high energy peak with positive chirality. This points to a specific member of the Moore–Read type states and agrees with the deduction based on daughter states.
Synthetic quantum Hall bilayer (SQHB), realized by optically driven monolayer graphene in the quantum Hall regime, provides a flexible platform for engineering quantum Hall phases as discussed in Ghazaryan et al. [Phys. Rev. Lett. 119, 247403 (2017)]. The coherent driving which couples two Landau levels mimics an effective tunneling between synthetic layers. The tunneling strength, the effective Zeeman coupling, and two-body interaction matrix elements are tunable by varying the driving frequency and the driving strength. Using infinite density matrix renormalization group techniques combined with exact diagonalization, we show that the system exhibits a non-Abelian bilayer Fibonacci phase at filling fraction $\ensuremath{\nu}=\frac{2}{3}$. Moreover, at integer filling $\ensuremath{\nu}=1$, the SQHB exhibits quantum Hall ferromagnetism. Using Hartree-Fock theory and exact diagonalization, we show that excitations of the quantum Hall ferromagnet are topological textures known as skyrmions.
We examine the quantum phase diagram of the fractional quantum Hall effect (FQHE) in the lowest two Landau levels in half-filled bilayer structures as a function of tunneling strength and layer separation, i.e., we revisit the lowest Landau-level filling factor 1/2 bilayer problem and make predictions involving bilayers in the half-filled second Landau level (i.e., filling factor 5/2). Using numerical exact diagonalization we investigate the important question of whether this system supports a FQHE described by the non-Abelian Moore-Read Pfaffian state in the strong-tunneling regime. In the lowest Landau level, we find that although, in principle, increasing (decreasing) tunneling strength (layer separation) could lead to a transition from the Abelian two-component Halperin 331 to non-Abelian one-component Moore-Read Pfaffian state, the FQHE excitation gap is relatively small in the lowest Landau level Pfaffian regime, and we establish that all so far observed FQHE states in half-filled lowest Landau level bilayers are most likely described by the Abelian Halperin 331 state. In the second Landau level we make the prediction that bilayer structures would manifest two distinct branches of incompressible FQHE corresponding to the Abelian 331 state (at moderate to low tunneling and large layer separation) and the non-Abelian Moore-Read Pfaffian state (at large tunneling and small layer separation). The observation of these two FQHE branches and the possible quantum phase transition between them will be compelling evidence supporting the existence of the non-Abelian Moore-Read Pfaffian state in the second Landau level. We discuss our results in the context of existing experiments and theoretical works.
In this paper, the density-matrix renormalization group method is employed to investigate the fractional quantum Hall effect at filling fractions $\ensuremath{\nu}=1/3$ and 5/25/25/2. We first present benchmark results at both filling fractions for large system sizes to show the accuracy as well as the capability of the numerical algorithm. Furthermore, we show that by keeping a large number of basis states, one can also obtain an accurate entanglement spectrum at $\ensuremath{\nu}=5/2$ for large systems with electron numbers up to Ne=34{N}_{e}=34Ne​=34, much larger than systems previously studied. Based on a finite-size scaling analysis, we demonstrate that the entanglement gap defined by Li and Haldane [Phys. Rev. Lett. 101, 010504 (2008)] is finite in the thermodynamic limit, which characterizes the topological order of the fractional quantum Hall effect state.
We compute energy gaps for spin-polarized fractional quantum Hall states in the lowest Landau level (LL) at filling fractions $\ensuremath{\nu}=\frac{1}{3},$ 25,\frac{2}{5},52​, 37,\frac{3}{7},73​, and 49\frac{4}{9}94​ using exact diagonalization of systems with up to 16 particles and extrapolation to the infinite system-size limit. The gaps calculated for a pure Coulomb interaction and ignoring finite width effects, disorder and LL mixing agree well with the predictions of composite fermion theory provided the logarithmic corrections to the effective mass are included. This is in contrast with previous estimates, which, as we show, overestimated the gaps at $\ensuremath{\nu}=2/5$ and 3/7 by around 15%. We also study the reduction of the gaps as a result of the nonzero width of the two-dimensional (2D) layer. We show that these effects are accurately accounted for using either Gaussian or ``$z\ifmmode\times\else\texttimes\fi{}$ Gaussian'' (zG)(z\mathrm{G})(zG) trial wave functions, which we show are significantly better variational wave functions than the Fang-Howard wave function. The Gaussian and zGz\mathrm{G}zG wave functions give Haldane pseudopotential parameters which agree with those of self-consistent local density approximation calculations to better than $\ifmmode\pm\else\textpm\fi{}0.2%.$ For quantum well parameters typical of heterostructure samples, we find gap reductions of around 20%. The experimental gaps, after accounting heuristically for disorder, are still around 40% smaller than the computed gaps. However, for the case of tetracene layers in metal-insulator-semiconductor (MIS) devices we find that the measured activation gaps are close to those we compute. We discuss possible reasons why the difference between computed and measured activation gaps is larger in GaAs heterostructures than MIS devices. Finally, we present calculations using systems with up to 18 electrons of the gap at $\ensuremath{\nu}=\frac{5}{2}$ including width corrections.