The interplay between spin-orbit coupling (SOC) and nontrivial band topology in ferromagnets gives rise to a rich landscape of topological transport phenomena such as anomalous Hall effect (AHE) and topological Hall effect (THE). One central goal in modern spintronics lies in the realization of the active control over topological transport phenomena in a reversible fashion, while unambiguously disentangling respective contributions of THE and AHE to the net Hall effect remains a formidable challenge. Here we establish magneto ionic control as a powerful paradigm for dynamically engineering topological transports in a 4d-orbital SrRuO3 system with sizable SOC and itinerant ferromagnetism. Harnessing controllable protonation or oxygen vacancy incorporation, the Fermi-level upshift relative to avoided band crossings are realized through band filling control, giving rise to tunable reversal temperature of AHE polarity. Of particular note is the emergence of hump like Hall anomalies through extensive ionic doping that can be reversibly switched, irrespective of AHE polarity, providing evidence for a THE signal driven by broken inversion symmetry rather than a two channel AHE. Our findings provide a viable tuning knob for Berry curvature engineering, enabling on demand control of topological transports in strong SOC ferromagnets for low power, reconfigurable all oxide spintronic devices.
The interplay between spin-orbit coupling (SOC) and nontrivial band topology in ferromagnets gives rise to a rich landscape of topological transport phenomena such as anomalous Hall effect (AHE) and topological Hall effect (THE). One central goal in modern spintronics lies in the realization of the active control over topological transport phenomena in a reversible fashion, while unambiguously disentangling respective contributions of THE and AHE to the net Hall effect remains a formidable challenge. Here we establish magneto ionic control as a powerful paradigm for dynamically engineering topological transports in a 4d-orbital SrRuO3 system with sizable SOC and itinerant ferromagnetism. Harnessing controllable protonation or oxygen vacancy incorporation, the Fermi-level upshift relative to avoided band crossings are realized through band filling control, giving rise to tunable reversal temperature of AHE polarity. Of particular note is the emergence of hump like Hall anomalies through extensive ionic doping that can be reversibly switched, irrespective of AHE polarity, providing evidence for a THE signal driven by broken inversion symmetry rather than a two channel AHE. Our findings provide a viable tuning knob for Berry curvature engineering, enabling on demand control of topological transports in strong SOC ferromagnets for low power, reconfigurable all oxide spintronic devices.
Topological kagome magnets offer a rich landscape for exploring the intricate interplay of quantum interactions among geometry, topology, spin, and correlation. GdTi3Bi4 crystallizes in layered Ti based kagome nets intertwined with zigzag Gd chains along the a axis and orders antiferromagnetically below 15 K. Here, we present the temperature and field dependent electrical transport of GdTi3Bi4 in different directions. The material exhibits anomalous Hall conductivity (AHC) of 410 S cm-1 at 2 K for B parallel c and it is completely absent for B parallel a, despite the similar magnetization observed in both orientations. This behavior is quite contradictory, as anomalous Hall effect (AHE) typically scales with the magnetization. Through first principles calculations, it is demonstrated that in the presence of time reversal symmetry broken by the Gd 4f sublattice and spin orbit coupling, the magnetization direction controls the orbital mixing in the Ti t2g bands, relocating Berry curvature hot spots and producing the observed orientation selective AHC. The results establish GdTi3Bi4 as platform for investigating new avenues of AHE, such as directional AHE, and thus shed new light on the intricate coupling between magnetic and electronic structures, paving the way for exploring novel quantum phenomena.
Magnetic skyrmions are topologically protected spin textures that are promising candidates for low-power spintronic memory and logic devices. Realizing skyrmion-based devices requires an understanding of how structural disorder affects their stability and transport properties. This study uses Ne+ ion irradiation at fluences from 1011 to 1014 ions-cm−2 to systematically vary defect densities in 80 nm epitaxial FeGe films and quantify the resulting modifications to magnetic phase boundaries and electronic scattering. Temperature- and field-dependent Hall measurements reveal that increasing disorder progressively extends the topological Hall signal from a narrow window near 200K in pristine films down to 4K at the highest fluence, with peak amplitude more than doubling. Simultaneously, the anomalous Hall effect transitions from quadratic Berry curvature scaling to linear skew scattering behavior, with the skew coefficient increasing threefold. These results establish quantitative correlations between defect concentration, skyrmion phase space, and transport mechanisms in a chiral magnet. It demonstrates that ion-beam modification provides systematic control over both topological texture stability and electrical detectability.
We investigate topological transport in spin-orbit coupled bosonic Mott insulators. We show that interactions can lead to anomalous quasiparticle dynamics even when the spin-orbit coupling is Abelian. To illustrate the latter, we consider the spin-orbit coupling realized in the experiment of Lin et al. [Nature (London) 471, 83 (2011)]. For this spin-orbit coupling, we compute the quasiparticle dispersions and spectral weights, the interaction-induced momentum-space Berry curvature, and the momentum-space distribution of spin density, and propose experimental signatures. Furthermore, we find that, for a generic spin orbit coupling, in our approximation for the single-particle propagator, the ground state can in principle support an integer Hall conductivity if the sum of the Chern numbers of the hole bands is nonzero.
Rapid progress in valleytronics and spintronics is limited by the scarcity of two-dimensional materials that simultaneously provide robust valley splitting and strong spin selectivity. Here we showed that a van der Waals heterostructure (VSe2/VN) built from hexagonal VSe2 and hexagonal VN addressed this gap. Using first-principles density functional theory, phonon, ab initio molecular dynamics stability tests, Bader charge analysis, and Wannier-based Berry-curvature calculations, we demonstrated an energetically and dynamically stable heterostructure that exhibited interlayer charge transfer and a work function intermediate between the constituent monolayers. The electronic structure showed small indirect PBE gap (108.9 meV), with HSE06 indicating a half-metallic tendency; a sizable conduction-band valley splitting (ΔCKK' = 22.9 meV for spin-up and ΔCKK' = 61.3 meV for spin-down); and pronounced spin asymmetry, where the spin-down channel showed a wide semiconducting gap (0.64 eV) while the spin-up channel was nearly gapless. These features yielded a high zero-strain spin-filter efficiency P = 75.4%, tunable to 82.5% under +4% biaxial tensile strain. The heterostructure also supported non-zero, valley-contrasting Berry curvature, and a large anomalous Hall conductivity (peak sigmaxy = 568.33 S/cm). Importantly, mean-field estimation placed the ferromagnetic Curie temperature near room temperature at zero strain (Tc = 284.04 K), while Tc decreased to 183.9 K at +4% strain, the magnetic order remained robust to cryogenic temperatures, providing a beneficial tuning knob to balance spin-filter performance with thermal stability in device-relevant regimes. These results identified VSe2/VN as a practical, strain-tunable platform for integrated valleytronic, spintronic devices, and for exploring anomalous Hall and valley-dependent transport phenomena.
Low-dimensional Dirac systems offer a versatile platform for quantum-geometric non-linear transport. Hexagonal warping in topological insulator (TI) surface states generates rich momentum-space geometric textures. However, mirror and time-reversal symmetries strictly constrain both the Berry curvature and quantum metric dipoles to zero. Here, we show that proximity-coupling a hexagonally warped TI to a d-wave altermagnet lifts spatial mirror symmetry via the interplay of C_{3v} warping and d-wave spin-splitting. This symmetry breaking enables finite Berry curvature dipole components, which, however, remain heavily suppressed near charge neutrality, establishing the intrinsic quantum metric dipole as the sole driver of the non-linear Hall response. This scattering-independent response vanishes at μ= 0 and exhibits odd parity under chemical potential inversion. Importantly, rotating the altermagnetic orientation angle φcontinuously tunes quantum metric dipole and induces a sign reversal, peaking near φ=0 and vanishing at φ= π/4. Our findings highlight TI-altermagnet interfaces as ideal candidates for gate- and orientation-tunable quantum metric spintronics.
The topological Hall effect, driven by the exchange interaction between conduction electrons and topological magnetic textures such as skyrmions, is a powerful probe for investigating the topological properties of magnetic materials. Typically, this phenomenon arises in systems with broken global inversion symmetry, where Dzyaloshinskii-Moriya interactions stabilize such textures. Here, we report the discovery of an emergent giant topological Hall effect in the twisted Fe3GeTe2 metallic system, which notably preserves the general global inversion symmetry. This effect manifests exclusively within a narrow window of "magic" twist angles ranging from 0.45° to 0.75°, while it is absent identically outside of that range, highlighting its unique and emergent nature. Micromagnetic simulations reveal that this topological Hall effect originates from a skyrmion lattice induced by alternating in-plane and layer-contrasting Dzyaloshinskii-Moriya interactions that result from local inversion symmetry breaking. Our findings underscore twisted Fe3GeTe2 as a versatile platform for engineering and controlling topological magnetic textures in metallic twisted van der Waals magnets, thereby opening up new avenues for next-generation spintronic devices.