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arXiv:2605.10968

Geometry-enabled magnetic resilience in superconducting nanowire single-photon detectors

Marinus C. van der Maas, Lin Jin, Ilhan Tunç, Raymond Vermeulen, Henri Ervasti, Ravi Gopie, Jan Riegelmeyer, Marco Colangelo, Ryoichi Ishihara, Carlos Errando-Herranz

cond-mat.supr-conphysics.app-phphysics.ins-detphysics.opticsquant-phSubmitted May 8, 2026• Announced May 11, 2026• 0 citations
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Abstract

While magnetic fields and superconductors are both central to classical and quantum technologies, their combined use is often challenging, as magnetic fields significantly affect superconducting device performance. In superconducting nanowire single-photon detectors (SNSPDs), magnetic fields drastically reduce detection efficiencies, hampering their application in magnetically-active classical and quantum photonics. Here, we systematically characterize the performance of NbTiN SNSPDs under magnetic fields and show the enhancement of their intrinsic detection efficiency (IDE) at lower bias currents and its suppression at higher currents. This leads to SNSPD performance degradation through reduced or disappearing saturation plateaus. We show that the magnitude of this degradation is highly dependent on nanowire width and demonstrate width-optimized SNSPDs with saturating IDE for a wide range of photon energies under application-relevant magnetic fields. Minimizing degradation in superconducting devices under magnetic fields enables applications like detector-integrated spin-optic and atomic quantum processors, high-sensitivity magnetometry, and quantum transduction.

Comments
31 pages, 16 figures

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While magnetic fields and superconductors are both central to classical and quantum technologies, their combined use is often challenging, as magnetic fields significantly affect superconducting device performance. In superconducting nanowire single-photon detectors (SNSPDs), magnetic fields drastically reduce detection efficiencies, hampering their application in magnetically-active classical and quantum photonics. Here, we systematically characterize the performance of NbTiN SNSPDs under magnetic fields and show the enhancement of their intrinsic detection efficiency (IDE) at lower bias currents and its suppression at higher currents. This leads to SNSPD performance degradation through reduced or disappearing saturation plateaus. We show that the magnitude of this degradation is highly dependent on nanowire width and demonstrate width-optimized SNSPDs with saturating IDE for a wide range of photon energies under application-relevant magnetic fields. Minimizing degradation in superconducting devices under magnetic fields enables applications like detector-integrated spin-optic and atomic quantum processors, high-sensitivity magnetometry, and quantum transduction.
Superconducting nanowire single-photon detectors (SNSPDs) offer high-quantum-efficiency and low-dark-count-rate single-photon detection. In a growing number of cases, large magnetic fields are being incorporated into quantum microscopes, nanophotonic devices, and sensors for nuclear and high-energy physics that rely on SNSPDs, but superconducting devices generally perform poorly in large magnetic fields. Here, we demonstrate robust performance of amorphous SNSPDs in magnetic fields of up to $\ifmmode\pm\else\textpm\fi{}6$ T with a negligible dark-count rate and unchanged quantum efficiency at typical bias currents. Critically, we also show that the SNSPD can be used as a magnetometer with a sensitivity of better than $100\phantom{\rule{0.2em}{0ex}}\ensuremath{\mu}\mathrm{T}/\sqrt{\mathrm{Hz}}$ and as a thermometer with a sensitivity of $20\phantom{\rule{0.2em}{0ex}}\ensuremath{\mu}\mathrm{K}/\sqrt{\mathrm{Hz}}$ at 1 K. Thus, a single-photon detector integrated into a quantum device can be used as a multifunctional quantum sensor capable of describing the temperature and magnetic field on chip simply by varying the bias current to change the operating modality from single-photon detection to thermometry or magnetometry.
Superconducting nanowire single-photon detectors (SNSPDs) combine high detection efficiency, low noise, and excellent timing resolution, making them a leading platform for photon-counting applications. However, despite decades of materials and fabrication research, detector performance has never been shown to match theoretical performance expectations. Here, we demonstrate for the first time in situ tuning of a detector from its typical, suboptimal operation, to a regime limited only by material quality, allowing the device to reach its intrinsic performance limit. Our approach is based on current-biased superconducting "rails" placed on either side of the detector that redistribute current across its width to achieve its peak performance. This technique reduces the dark count rate by ten orders of magnitude. Further, we show operation at this intrinsic performance limit for devices up to 0.1 mm wide, and also demonstrate near-unity internal detection efficiency (IDE) at a wavelength of 4um for a 20um-wide detector--a factor of 20 wider than the current state of the art. This work enables future detectors to overcome the Pearl limit for device width, paving the way for arbitrarily large detectors.
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Superconducting nanowire single-photon detectors (SNSPDs) with high system detection efficiency (SDE) would enable remarkable experiments in quantum information processing. However, realizing a NbN SNSPD with saturated intrinsic detection efficiency (IDE) that retains high SDE at near-infrared wavelengths is challenging, due to the high critical temperature of NbN. This study uses defect engineering by helium-ion irradiation to enhance the IDE of NbN SNSPDs to saturation without sacrificing SDE. This technique also allows direct comparison of irradiation-induced changes in detector performance, making it a useful tool for studying the physics of superconducting devices.
Niobium Titanium nitride (NbTiN) based superconducting nanowire single photon detectors (SNSPDs) are known for their high performance across a wide spectral range, from the X-ray to the mid-infrared. Nonetheless, fabrication challenges and performance degradation attributable to surface oxidation and lack of uniformity in films thinner than 5 nm remain a significant barrier for achieving high-quality detectors. In this work, we study the influence of a Silicon capping layer on film properties and on the performance of SNSPDs. A Silicon capping layer effectively suppresses oxidation and increases the superconducting transition temperature. This enables superconductivity in films as thin as 3 nm at 3 K, increases critical current in patterned nanowires and significantly extends the saturation plateau from the visible to the near infrared (up to 2050 nm): These detectors maintain sub-50 ps timing jitter, even for nanowires as wide as 250 nm and with detection areas of 20x20μm2. Our results establish that thinner films protected by a capping layer allow for the fabrication of wider wires, decreasing nanofabrication challenges and extending the operating temperature range for efficient single photon detection.