Detecting single photons is essential for applications such as dark matter detection, quantum science and technology, and biomedical imaging. Superconducting nanowire single-photon detectors (SNSPDs) excel in this task due to their near-unity detection efficiency, subhertz dark count rates, and picosecond timing jitter. However, a local increase of current density (current crowding) in the bends of meander-shaped SNSPDs limits these performance metrics. By locally irradiating the SNSPD’s straight segments with helium ions while leaving the bends unirradiated, we realize current crowding–free SNSPDs with simultaneously enhanced sensitivity: After irradiation with 800 ions nm −2 , locally irradiated SNSPDs showed a relative saturation plateau width of 37%, while fully irradiated SNSPDs reached only 10%. This larger relative plateau width allows operation at lower relative bias currents, thereby reducing the dark count rate while still detecting single photons efficiently. We achieve an internal detection efficiency of 94% with 7 mHz dark count rate near the onset of saturating detection efficiency for a wavelength of 780 nm.
Detecting single photons is essential for applications such as dark matter detection, quantum science and technology, and biomedical imaging. Superconducting nanowire single-photon detectors (SNSPDs) excel in this task due to their near-unity detection efficiency, subhertz dark count rates, and picosecond timing jitter. However, a local increase of current density (current crowding) in the bends of meander-shaped SNSPDs limits these performance metrics. By locally irradiating the SNSPD’s straight segments with helium ions while leaving the bends unirradiated, we realize current crowding–free SNSPDs with simultaneously enhanced sensitivity: After irradiation with 800 ions nm −2 , locally irradiated SNSPDs showed a relative saturation plateau width of 37%, while fully irradiated SNSPDs reached only 10%. This larger relative plateau width allows operation at lower relative bias currents, thereby reducing the dark count rate while still detecting single photons efficiently. We achieve an internal detection efficiency of 94% with 7 mHz dark count rate near the onset of saturating detection efficiency for a wavelength of 780 nm.
Superconducting nanowire single-photon detectors (SNSPDs) combine high detection efficiency, low noise, and excellent timing resolution, making them a leading platform for photon-counting applications. However, despite decades of materials and fabrication research, detector performance has never been shown to match theoretical performance expectations. Here, we demonstrate for the first time in situ tuning of a detector from its typical, suboptimal operation, to a regime limited only by material quality, allowing the device to reach its intrinsic performance limit. Our approach is based on current-biased superconducting "rails" placed on either side of the detector that redistribute current across its width to achieve its peak performance. This technique reduces the dark count rate by ten orders of magnitude. Further, we show operation at this intrinsic performance limit for devices up to 0.1 mm wide, and also demonstrate near-unity internal detection efficiency (IDE) at a wavelength of 4um for a 20um-wide detector--a factor of 20 wider than the current state of the art. This work enables future detectors to overcome the Pearl limit for device width, paving the way for arbitrarily large detectors.
Abstract To facilitate high optical coupling efficiency and absorptance, the active area of a superconducting nano/microstrip single-photon detector (SNSPD/SMSPD) is often designed as a meander configuration with a high filling factor (e.g. ⩾0.5). However, the switching current (I sw) of SNSPD/SMSPD, at which the detector switches into the normal state, is significantly suppressed by a geometry-induced ‘current crowding effect’, where there are sharp bends in the strip. Here, we propose and experimentally verify an alternative method to reduce current crowding both in SNSPD and SMSPD by directly increasing the thickness of the bends through the deposition and lift-off of a secondary superconducting film. We measure and compare the performance of SNSPDs and SMSPDs with different filling factors and bend configurations, with or without thickened bends. Improvements for detectors were observed in detection efficiency, intrinsic dark count rate, and time jitter, owing to the enhanced I sw. Our method provides a promising way of optimizing SNSPD/SMSPD detection performance.
Superconducting nanowire single photon detectors (SNSPDs) have demonstrated advantages over traditional detectors in many fields [1]. Most fiber-coupled SNSPDs are coupled to single mode fibers, limiting their usability for applications where large surface area detectors are needed, for example fluorescence detection and satellite-based quantum communication [2][3]. Other important requirements for many applications are broadband detection efficiency, and low timing jitter [4]. So far, the increased meander length of multimode detectors, and the therefore increased kinetic inductance and number of imperfections due to film inhomogeneities have limited the timing jitter [5]. Moreover, combining low timing jitter with high detection efficiency and low dark count rate in one device is challenging due to the tradeoffs between different properties of SNSPDs [6]. In this paper, we achieved high efficiency and strong saturation over a broad wavelength range with a low timing jitter of 16.99 ps while maintaining a low dark count rate of < 0.2 Hz for an SNSPD coupled to a 50 µm core multimode fiber. To enhance the broadband absorption from 405 nm to 830 nm, detectors were fabricated on an optimized SiO2 cavity and Aluminum mirror. The geometry of the nanowire was also tuned to reach a good internal saturation of efficiency over the visible/NIR range but also to carry high current to get a large signal. Furthermore, a cryogenic readout amplifier was optimized to improve the signal to noise ratio and thus lead to high time resolution. Our devices can be readily used to enable higher resolution and faster quantum optics, bio-imaging, laser ranging and other optical experiments.
Superconducting nanowire single-photon detectors (SNSPDs) are indispensable in fields such as quantum science and technology, astronomy, and biomedical imaging, where high detection efficiency, low dark count rates, and high timing accuracy are required. Recently, helium (He) ion irradiation was shown to be a promising method to enhance SNSPD performance. Here, we study how changes in the underlying superconducting NbTiN film and the SiO2/Si substrate affect device performance. While irradiated and unirradiated NbTiN films show similar crystallinity, we observe He bubble formation below the SiO2/Si interface and an amorphization of the Si substrate. Both reduce the thermal conductance between the superconducting thin film and the substrate from 210 to 70 W m−2 K−4 after irradiation with 2000 ions nm−2. This effect, combined with the lateral straggle of He ions in the substrate, allows the modification of the superconductor-to-substrate thermal conductance of an SNSPD by selectively irradiating only the regions around the nanowire. With this approach, we achieved a broader bias current range (9.8 μA vs 3.7 µA) in which the detector operates at its maximum detection efficiency, which is beneficial for reducing dark counts while maintaining high sensitivity. Moreover, the photon-assisted critical current remained similar to that of the unirradiated reference device (59.0 µA vs 60.1 µA), while full irradiation reduced it to 22.4 µA. Our results suggest that the irradiation-induced reduction of the thermal conductance significantly enhances SNSPD sensitivity, offering a novel approach to locally engineer substrate properties for improved detector performance.
Superconducting nanowire single-photon detectors (SNSPDs) provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, compatibility with an integrated optical platform is a crucial requirement for applications in emerging quantum photonic technologies. Here we present SNSPDs embedded in nanophotonic integrated circuits which achieve internal quantum efficiencies close to unity at 1550 nm wavelength. This allows for the SNSPDs to be operated at bias currents far below the critical current where unwanted dark count events reach milli-Hz levels while on-chip detection efficiencies above 70% are maintained. The measured dark count rates correspond to noise-equivalent powers in the 10(-19) W/Hz(-1/2) range and the timing jitter is as low as 35 ps. Our detectors are fully scalable and interface directly with waveguide-based optical platforms.