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arXiv:2603.10238

Disorder-induced localisation in the Mott-Hubbard model

Ričards Kristers Knipšis, Friedemann Queißer, Jesumony Jayabalan, Gaël Reecht, Manuel Gruber, U. Bovensiepen, Ralf Schützhold

Published Mar 10, 2026• 0 citations
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Abstract

For the Fermi-Hubbard model in the Mott insulator phase, we employ the hierarchy of correlations to study how doublon and holon quasi-particle excitations are affected by adding disorder to the system. We study two types of disorder: charge disorder, in the form of on-site potential randomness; and spin disorder, in the form of a fixed, randomly generated background spin arrangement. By analysing the quasi-particle eigen-spectra and quantifying the degree to which the corresponding eigen-states localise, we find both an energetic and spatial separation between localised and delocalised states in the charge disorder. In contrast, the spin disorder results in localised states throughout the quasi-particle bands. Finally, we repeat our calculations using strong-coupling perturbation theory, and compare the results obtained from both methods.

DOI
10.48550/arxiv.2603.10238

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For the Fermi-Hubbard model in the Mott insulator phase, we employ the hierarchy of correlations to study how doublon and holon quasi-particle excitations are affected by adding disorder to the system. We study two types of disorder: charge disorder, in the form of on-site potential randomness; and spin disorder, in the form of a fixed, randomly generated background spin arrangement. By analysing the quasi-particle eigen-spectra and quantifying the degree to which the corresponding eigen-states localise, we find both an energetic and spatial separation between localised and delocalised states in the charge disorder. In contrast, the spin disorder results in localised states throughout the quasi-particle bands. Finally, we repeat our calculations using strong-coupling perturbation theory, and compare the results obtained from both methods.
We describe a new microscopic approach for analyzing interacting electron systems with local moments or, in principle, any local order parameter. We specialize attention to the doped Mott insulator phase of the Hubbard model, where standard weak-coupling perturbation methods fail. A rotationally invariant Stratonovich-Hubbard field is introduced to decouple the static spin components of the interaction at each site. Charge degrees of freedom are then treated by ``slave'' Hartree-Fock in the presence of a spatially varying random spin field. The effective action reduces to a classical Heisenberg model at half filling, insuring that the system has (i) finite-range order at T>0 with an exponentially diverging correlation length and (ii) a one-electron Mott-Hubbard gap in the presence of disorder. Away from half-filling properties are determined by strongly non-Gaussian fluctuations in the amplitude and orientation of the local spin fields. The saddle point equations of the theory at zero temperature reduce to inhomogeneous Hartree-Fock, so that disordering of domain walls at finite temperature is in principle included. We present preliminary small system results for the intermediate and large interaction regimes obtained by Monte Carlo simulation of random spin field configurations.
Abstract For the Mott insulator state of the Fermi-Hubbard model in the strong-coupling limit, we study the interaction between quasi-particles in the form of doublons and holons. Comparing different methods – the hierarchy of correlations, strong-coupling perturbation theory, and exact analytic solutions for the Hubbard tetramer – we find an effective interaction between doublons and/or holons to linear order in the hopping strength which can display attractive as well as repulsive contributions, depending on the involved momenta. Finally, we speculate about the implications of our findings for high-temperature superconductivity.
We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon–doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Néel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon–doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott–Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of the fundamental physics of the Mott state, both in the antiferromagnetic insulator and at finite temperatures and dopings.
The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite temperatures. We first benchmark its predictions against state-of-the-art quantum Monte Carlo simulations, demonstrating quantitative agreement. Qualitatively, the short-ranged spin fluctuations both induce holon-doublon bound states and renormalize the charge sector to form the Hubbard bands. The Mott gap is understood as the charge gap renormalized downward by these spin fluctuations. As temperature increases, the Mott gap closes before the charge gap, causing a pseudogap regime to appear naturally during the melting of the Mott insulator.
In this work, we investigate impurity-induced Friedel oscillations in the doped two-dimensional Hubbard model, focusing on the role of holon and doublon excitations. We show that weak impurities, due to the non-fermionic nature of the underlying quasiparticles, induce Friedel oscillations whose behavior is consistent with an effective non-interacting theory for these quasiparticles, and whose wavevector reflects the violation of Luttinger's theorem. At larger impurity strength, the system transitions to a phase-separated state composed of coexisting Mott-insulating (half-filled) and hole-rich regions. Within the composite operator framework, this phase separation arises from a competition between the kinetic energy of holons and the tendency to form tightly bound holon-doublon pairs. Our results offer new insights into the nature of charge carriers and the emergent electronic phases in the doped Mott regime.
Electronic band structures usually remain unaffected by doping via a chemical-potential shift or by increasing the temperature in conventional band insulators. In contrast, it has been shown that those of Mott and Kondo insulators can be altered by doping or by increasing the temperature: electronic modes are induced within the band gap, exhibiting momentum-shifted magnetic dispersion relations from the band edges. Here, this study demonstrates that the underlying mechanism of the remarkable strong-correlation effects can be generalized to the emergence of electronic modes caused by various spin and charge perturbations, including magnetization of spin-gapped Mott and Kondo insulators. These emergent modes can alter the band structure if a macroscopic number of spins or charges are excited by the perturbations at a given moment. The origins and dispersion relations of these emergent modes, particularly why and how the dispersion relations depend on the momentum and energy of the perturbations, are elucidated by investigating the selection rules and using the Bethe ansatz and the effective theory for weak inter-unit-cell hopping. The validity and generality of the theoretical results across different models and spatial dimensions are verified by numerical calculations for the one- and two-dimensional Hubbard models, periodic Anderson models, Kondo lattice models, and ladder and bilayer Hubbard models. This study provides crucial insights into why and how spin and charge perturbations can alter the band structure in strongly correlated insulators, thereby paving the way for band-structure engineering in strong-correlation electronics, which enables previously unexplored functionalities by exploiting the unconventional characteristics revealed in this paper.