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arXiv:2602.17899 · Physical Review Letters

Measuring and correcting nanosecond pulse distortions in quantum-dot spin qubits

Jiheng Duan, Fernando Torres-Leal, John M. Nichol

quant-phcond-mat.mes-hallSubmitted Feb 19, 2026• Announced Feb 23, 2026• 0 citations
v1 · Feb 19, 2026v2 · Sep 12, 2026
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Abstract

Gate-defined semiconductor quantum dots utilize fast electrical control to manipulate spin and charge states of individual electrons. Electrical pulse distortions can limit control fidelities but are difficult to measure at the device level. Here, we use detuning-axis pulsed spectroscopy to characterize baseband pulse distortions in a silicon double quantum-dot. We extract the gate-voltage impulse response and apply a digital pre-distortion filter to eliminate pulse distortions on timescales longer than 1~ns. With the pre-distortion, we reduce the frequency chirp of coherent exchange oscillations in a singlet-triplet qubit. Our results suggest a scalable and tuning-efficient method for characterizing pulse distortions in quantum-dot spin qubits.

Journal reference
Physical Review Letters 137.11 (2026): 113601
DOI
10.1103/l5k6-csy3
Comments
19 pages, 12 figures

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Gate-defined semiconductor quantum dots utilize fast electrical control to manipulate spin and charge states of individual electrons. Electrical pulse distortions can limit control fidelities but are difficult to measure at the device level. Here, we use detuning-axis pulsed spectroscopy to characterize baseband pulse distortions in a silicon double quantum-dot. We extract the gate-voltage impulse response and apply a digital pre-distortion filter to eliminate pulse distortions on timescales longer than 1~ns. With the pre-distortion, we reduce the frequency chirp of coherent exchange oscillations in a singlet-triplet qubit. Our results suggest a scalable and tuning-efficient method for characterizing pulse distortions in quantum-dot spin qubits.
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The implementation of high-fidelity quantum gates for spin qubits requires accurate control of exchange interactions between electrons confined in quantum dots, but pulse distortions can limit this control accuracy. Although linear-dynamical distortions can be compensated for by appropriately convolving the control signal, determining the necessary convolution requires detailed knowledge of the distortion's transfer function, and therefore the calibration of numerous parameters. Alternatively, control pulses can be designed to have a net-zero time integral canceling out linear-dynamical pulse distortions. We generalize net-zero pulse designs to quasi-zero pulses allowing net-positive but reduced time integrals. Using these pulse designs, we systematically develop complete gate sets for exchange-only qubits, and study the resulting tradeoffs between pulse duration, fidelity, and the required number of tunable parameters, both in simulation and experiment. We benchmark the optimized gate pulses on Intel's Tunnel Falls six-dot device and show they achieve fidelities similar to those obtained with a full filtering approach, with identical pulse durations and fewer tuning parameters. This reduction in complexity opens the door to fast and easily automated calibration schemes compatible with large-scale commercial quantum devices.
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Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning [Symbol: see text], which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an f(opt)(g) that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound f(max) that is specific to the qubit-gate combination. We show that similar gate fidelities (~99:5%) should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins.
A logical qubit based on electron-spin singlet-triplet states in a semiconductor double dot has emerged as one of the promising candidates for quantum information processing. Here we propose a systematic method to implement rapid quantum gates in the nanosecond time scale for both a single qubit and multiqubits, by applying adiabatic driving pulses with tunable velocity. This yields considerable high-fidelity gate operations reaching 99.999.9%99.9 which are crucial to scalable quantum computation in a semiconductor-based architecture, even considering the demanding experimental constraints and realistic spin and charge noises.