By utilizing the site-dependent spin quantization axis in semiconductor quantum dot (QD) arrays, shuttling-based spin qubit gates have become an appealing approach to realize scalable quantum computing due to the circumvention of using high-frequency driving fields. The emergence of a spin deviation from the local quantization axis of one residing QD is the prerequisite to implement the qubit gates. In this work, we study the non-adiabatic dynamics of a spin qubit shuttling between coupled QDs with inhomogeneous Landé g-tensors and a small magnetic field. The spin dynamics is analyzed through solving the time-dependent Schrödinger equation of the qubit under the effects of spin-orbit interaction and rapid ramping inter-dot detuning. The precondition, imposed on the ramping time and the tunnel-coupling strength, to ensure a high-fidelity inter-dot transfer is estimated. We then calculate the change in the spin orientation of a transferred qubit, and study the dependences of the spin deviation on the difference in the quantization axes of the two QDs, the tunnel-coupling strength, and the ramping time. We also demonstrate that the effect of multiple rounds of inter-dot bidirectional shuttling can be captured by an operator matrix, and evaluate the idling times required for realizing the single-qubit Pauli-X and Pauli-Y gates. Intriguingly, it is confirmed that a generalized Hadamard gate can be achieved through tuning the idling times.
By utilizing the site-dependent spin quantization axis in semiconductor quantum dot (QD) arrays, shuttling-based spin qubit gates have become an appealing approach to realize scalable quantum computing due to the circumvention of using high-frequency driving fields. The emergence of a spin deviation from the local quantization axis of one residing QD is the prerequisite to implement the qubit gates. In this work, we study the non-adiabatic dynamics of a spin qubit shuttling between coupled QDs with inhomogeneous Landé g-tensors and a small magnetic field. The spin dynamics is analyzed through solving the time-dependent Schrödinger equation of the qubit under the effects of spin-orbit interaction and rapid ramping inter-dot detuning. The precondition, imposed on the ramping time and the tunnel-coupling strength, to ensure a high-fidelity inter-dot transfer is estimated. We then calculate the change in the spin orientation of a transferred qubit, and study the dependences of the spin deviation on the difference in the quantization axes of the two QDs, the tunnel-coupling strength, and the ramping time. We also demonstrate that the effect of multiple rounds of inter-dot bidirectional shuttling can be captured by an operator matrix, and evaluate the idling times required for realizing the single-qubit Pauli-X and Pauli-Y gates. Intriguingly, it is confirmed that a generalized Hadamard gate can be achieved through tuning the idling times.
Quantum physics describes the universe on a microscopic scale. Even though this scale is not accessible without complex experimental setups, quantum effects are respon- sible for the properties of matter and in some instances we have learned to exploit them technologically. A modern computer constituted of transistors passively utilizes the quantum nature of charge carriers in the band structure of semiconductors to encode and process information. Although such a classical computer is a formidable tool already, what could be achieved with active control over the quantum states in the computer is an intriguing question. This is the idea of the quantum computer, which offers an entirely new paradigm of computing by encoding information in quantum binary digits (qubits). Indeed, for several applications it has been shown that a quantum computer is superior to its classical counterpart, even though its realization remains elusive up to date. One candidate to host qubits are gate-defined semiconductor quantum dots, confin- ing single or few charge carriers with spin. The spin of a single confined electron is a quantum two-level system which can be manipulated and measured, allowing the storage and processing of quantum information. This thesis can be viewed as part of the endeavor to give birth to quantum computers based on semiconductor spin qubits. It primarily focuses on the challenge to enable scalable architectures of well-characterized qubits. In the first part, spin shuttling is investigated. This denotes the coherent transport of a single spin between spatially separate nodes of a quantum processor, driven by a time-dependent electric potential. The object of study is a minimal version of a bucket- brigade-like spin shuttling between two quantum dots. The probability of maintaining the spin state is identified as figure of merit and the effect of spin-orbit interaction and the Zeeman effect in an inhomogeneous magnetic field is explored with analytical and numerical methods. Special attention is paid to the repercussions of near-degenerate valleys. The second part of the thesis addresses the challenge to probe the microscopic properties of a quantum dot array, which is a crucial first step before any quantum operation can be performed. The transmission of a microwave resonator coupled to a triple quantum dot occupied by two electrons is investigated, and a scheme to infer the exchange interaction between electrons in adjacent quantum dots is proposed. By means of analytical derivations it is shown that the transmission profile of the resonator directly reveals the value of the exchange coupling strength between two electrons. This holds even if magnetic gradients or a valley splitting comparable to the inter-dot tunnel coupling are included. Subsequently, quantum transport measurements in the Pauli blockade regime are modelled in the presence of a microwave resonator, bringing together two powerful techniques to probe quantum dots. Based on generalized input-output theory, a theoretical framework is derived to investigate how a double quantum dot in a transport setup interacts with a coupled microwave resonator while the current through the double qauntum dot is rectified by Pauli blockade. It is shown that the output field of the resonator can be used to infer the leakage current and thus obtain insight into the blockade mechanisms and to estimate a large number of parameters of the quantum dots. Furthermore, the back-action of the resonator photons on the steady state leakage current is described and quantified. In the context of Pauli blockade, the spin and valley physics of bilayer graphene quantum dots in the few-electron regime is touched upon, describing a situation where spin blockade is observed despite the presence of the valleys. In the final part of the thesis, the attention is shifted towards the readout of the spin qubits. A new paradigm of dispersive readout is devised, which is performed while the qubit dephases, implementing a measurement in the x-basis. Laplace transforming the time dependent cavity response allows a separation of contributions from multiple qubits coupled to the same resonator. Thus, they can be read out simultaneously in a single shot. Modelling silicon spin qubits, as an example, results in in a readout time that compares favourably to conventional dispersive readout with comparable fidelity, even for a single qubit. With an auxiliary qubit the readout scheme can be extended to a quantum non-demolition measurement.
Shuttling spin qubits in systems with large spin-orbit interaction (SOI) can cause errors during motion. However, in this work, we demonstrate that SOI can be harnessed to implement an arbitrary high-fidelity two-qubit (2Q) gate. We consider two spin qubits defined in a semiconductor double quantum dot that are smoothly moved toward each other by gate voltages. We show that an arbitrary high-fidelity 2Q gate can be realized by controlling the shuttling speed and waiting times, and leveraging strong intrinsic or extrinsic SOI. Crucially, performing 2Q operations during qubit transport enables a one-step realization of a wide range of 2Q gates, which often involve several steps when implemented using static dots. Our findings establish a practical route toward direct implementation of any 2Q gate via spin shuttling, significantly reducing control overhead in scalable quantum computing architectures.
Abstract Spin qubits in semiconductor quantum dots offer a gate-tunable platform for quantum information processing. While two-qubit interactions are typically realized through exchange coupling between neighboring spins, coupling spin qubits to photons via hybrid spin-circuit QED (cQED) devices enables long-range interactions and integration with other cQED platforms. Here, we investigate hole spin–photon coupling in compact single quantum dot setups. By incorporating ubiquitous strain inhomogeneities to our theory, we identify three main spin–photon coupling channels: a vector-potential-spin–orbit geometric mechanism–dominant for vertical magnetic fields–, an inhomogeneous Rashba term generalizing previous spin–orbit field models, and strain-induced g -tensor terms–most relevant for in-plane fields. Comparing Si, unstrained (relaxed) Ge, and biaxially strained Ge wells, we find that Si and unstrained Ge provide optimal coupling strengths (tens of MHz) thanks to their reduced heavy-hole, light-hole splitting. We demonstrate efficient switching of the spin–photon coupling while preserving sweet spot conditions by operating with an in-plane magnetic field. Finally, we evaluate quantum state transfer and two-qubit gate protocols, achieving ≳ 99 % fidelity for state transfer and > 90 % for two-qubit gates with realistic coherence times, establishing single-dot hole spins as a viable platform for compact spin-cQED architectures and highlighting unstrained Ge as a promising candidate for spin–photon interactions.
Superconducting spin qubits, also known as Andreev spin qubits, promise to combine the benefits of superconducting qubits and spin qubits defined in quantum dots. While most approaches to control these qubits rely on controlling the spin degree of freedom via the supercurrent, superconducting spin qubits can also be coupled to each other via the superconductor to implement two-qubit quantum gates. We theoretically investigate the interaction between superconducting spin qubits in the weak tunneling regime and concentrate on the effect of spin-orbit interaction (SOI), which can be large in semiconductor-based quantum dots and thereby offers an additional tuning parameter for quantum gates. We find analytically that the effective interaction between two superconducting spin qubits consists of Ising, Heisenberg, and Dzyaloshinskii-Moriya interactions and can be tuned by the superconducting phase difference, the tunnel barrier strength, or the SOI parameters. The Josephson current becomes dependent on SOI and spin orientations. We demonstrate that this interaction can be used for fast controlled phase-flip gates with a fidelity >99.99%. We propose a scalable network of superconducting spin qubits which is suitable for implementing the surface code.
Hole spin qubits in semiconductor quantum dots (QDs) are promising candidates for quantum information processing due to their weak hyperfine coupling to nuclear spins, and to the strong spin-orbit coupling, which allows for rapid operation time. We propose a coherent control on two heavy-hole spin qubits in a double QD by a fast adiabatic driving protocol, which helps to achieve higher fidelities than other experimentally commonly used protocols as linear ramping, $\ensuremath{\pi}$ pulses or Landau-Zener passages. Using fast quasiadiabatic driving via spin-orbit coupling, it is possible to reduce charge noise significantly for qubit manipulation and achieve high robustness for the qubit initialization. We also implement one- and two-qubit gates, in particular, not, cnot, and swaplike gates, of hole spins in a double QD achieving fidelities above $99\mathrm{%}$, exhibiting the capability of hole spins to implement universal gates for quantum computing.
Single spin quantum dot qubits in silicon are a promising candidate for a scalable quantum processor due to their long coherence times, compact size, and ease of integration into existing fabrication technologies. Realizing a large quantum processor composed of thousands or more logical qubits requires the integration of conventional transistor circuitry \nand wiring interconnects to control each individual dot in the processor. The high density of control wiring required for these processors presents many engineering challenges. In this thesis, we propose a surface code quantum processor for silicon quantum dot qubits based on a node/network architecture. Local nodes consisting of just seven quantum dots are \nspatially separated on the order of microns to facilitate space for the necessary high density wiring. Entanglement is distributed between individual nodes via shuttling of entangled electron pairs throughout the network. X or Z stabilizer operations, necessary for operating the surface code, are realized by distributing three electron spin singlet pairs across four local nodes followed by local gate operations and ancilla measurements. Simulations of electron shuttling indicate that adiabatic transport is possible on timescales that do not bottleneck the processor speed. Phase rotation of the shuttled spin, induced by the Stark shift, can lower the overall shuttling fi delity; however, the error can be mitigated by proper electrostatic tuning of the stationary electron's g-factor. Using realistic noise models, we estimate error thresholds with respect to single and two-qubit gate fidelities as well as \nsinglet dephasing errors during shuttling. Electron shuttling is a key resource of the proposed network architecture. We continue the shuttling simulations by presenting an algorithm for finding constant-adiabatic shuttling control pulses, which enables a more rigorous study of how different conditions impact the shuttling speed and fidelity. These constant adiabatic pulses are used to optimize the physical device geometry to maximize charge shuttling speeds up to 300 nm/ns in the single-valley case. We then switch to an effective Hamiltonian representation where spin and valley degrees of freedom are accounted for during shuttling. Using realistic device and material parameters, shuttle speeds in the range 10-100 nm/ns with high spin entanglement \n fidelities are obtained when the tunneling energy exceeds the Zeeman energy. High fidelity shuttling also requires the inter-dot valley phase difference to be below a threshold determined by the ratio of tunneling and Zeeman energies, so that spin-valley-orbit mixing is weak. In this regime, we find that the primary source of infi delity is a coherent spin rotation that is correctable, in principle, using single spin rotations. Two-qubit gates in the network architecture are mediated by the exchange interaction, \nan interaction that stems from the Coulomb interaction but manifests as a rotation between the |0,1> and |1,0> two qubit states. Realizing fault tolerant two-qubit gates has proven difficult in silicon quantum dots due to charge noise which perturbs the electron orbitals states, causing decoherence. Quantitatively accurate modelling of exchange in general quantum dot networks is important towards realizing fault tolerant gates. Traditional modelling methods, such as a full con figuration interaction approach, are cumbersome due to significant computational overhead required when accounting for the electron-electron interactions in the calculation. We present a modi ed linear combination of harmonic orbitals con figuration interaction (LCHO-CI) approach which signifi cantly reduces the computational time for obtaining quantitatively accurate estimations of exchange. The method works by approximating the single electron orbitals of the quantum dot network using an orthogonal basis of harmonic orbitals. This choice of orthogonal basis allows a precalculated library of matrix elements to be used in evaluating the Coulomb interactions, which speeds up the LCHO-CI calculation. The modi ed LCHO-CI approach is then used to study how the physical device geometry impacts the charge noise sensitivity of a double quantum dot system. We fi nd that, in general, geometries which increase the dot charging energy and decrease the gate lever arms improve the system's sensitivity to charge noise. We conclude this thesis by pivoting away from theoretical studies of silicon quantum dots and towards experimental studies of electron transport in dopant-free GaAs heterostructures. In modulation doped GaAs heterostructures, a doping layer is used to induce a two-dimensional electron gas (2DEG) at the heterojunction. Dopant-free GaAs lack the doping layer which makes fabrication more difficult as local electron reservoirs must be used to bring carriers and induce a 2DEG. The lack of the doping layer offers several advantages over modulation doped heterostructures, such as gate-ability of the 2DEG and ability to make ambipolar devices (both n- and p-type ohmic contacts). Realizing n- and p-type ohmic contacts requires etching a recess pit and depositing the ohmic material at an angle in order to preventing screening of the top gate when inducing a 2DEG or two-dimensional hole gas (2DHG). Magnetotransport experiments are used to characterize an induced 2DEG and 2DHG in a Hall bar fabricated on a 310 nm deep single heterojunction. The carrier mobility and density can be tuned using the top gate, and we achieve peak mobility values of 4.5E6 cm2/Vs and 0.65E6 cm2/Vs for the 2DEG and 2DHG respectively. We then move to a one-dimensional system and study electron transport through a quantum point contact. Conductance quantization is observed, and subband spectroscopy \nmeasurements indicate a 1D subband spacing of 4.5 meV. Finally, we study dynamically driven electron transport in a zero-dimensional system using a tunable-barrier quantum dot acting as a single electron pump. Single electron pumping is observed up to T = 5 K, and fi ts to the electron cascade model suggests pumping errors of 1.87 ppm when operated at a driving frequency of f = 500 MHz.