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arXiv:2601.06805

Cancelling second order frequency shifts in Ge hole spin qubits via bichromatic control

Xiangjun Tan, Zhanning Wang, Wenkai Bai, Hanjie Zhu

quant-phcond-mat.mes-hallSubmitted Jan 11, 2026• Announced Jan 13, 2026
v1 · Jan 11, 2026v2 · Mar 21, 2026
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Abstract

Germanium quantum dot hole spin qubits are compatible with fully electrical control and are progressing toward multi-qubit operations. However, their coherence is limited by charge noise and driving field induced frequency shifts, and the resulting ensemble $1/f$ dephasing. Here we theoretically demonstrate that a bichromatic driving scheme cancels the second order frequency shift from the control field without sacrificing the electric dipole spin resonance (EDSR) rate, and without additional gate design or microwave engineering. Based on this property, we further demonstrate that bichromatic control creates a wide operating window that reduces sensitivity to quasi-static charge noise and thus enhances single qubit gate fidelity. This method provides a low-power route to a stabler frequency operation in germanium hole spin qubits and is readily transferable to other semiconductor spin qubit platforms.

Journal reference
Appl. Phys. Lett. 128, 124001 (2026)
DOI
10.1063/5.0311492

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Germanium quantum dot hole spin qubits are compatible with fully electrical control and are progressing toward multi-qubit operations. However, their coherence is limited by charge noise and driving field induced frequency shifts, and the resulting ensemble 1/f1/f1/f dephasing. Here we theoretically demonstrate that a bichromatic driving scheme cancels the second order frequency shift from the control field without sacrificing the electric dipole spin resonance (EDSR) rate, and without additional gate design or microwave engineering. Based on this property, we further demonstrate that bichromatic control creates a wide operating window that reduces sensitivity to quasi-static charge noise and thus enhances single qubit gate fidelity. This method provides a low-power route to a stabler frequency operation in germanium hole spin qubits and is readily transferable to other semiconductor spin qubit platforms.
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Electrically driven spin resonance (EDSR) is an established tool for controlling semiconductor spin qubits. Here, we theoretically study a frequency-mixing variant of EDSR, where two driving tones with different drive frequencies are applied, and the resonance condition connects the spin Larmor frequency with the sum of the two drive frequencies. Focusing on flopping-mode operation of a single electron in a double quantum dot with spin-orbit interaction, we calculate the parameter dependence of the Rabi frequency and the Bloch-Siegert shift. A shared-control spin qubit architecture could benefit from this bichromatic EDSR scheme, as it enables simultaneous single-qubit gates.
Abstract In semiconductor hole spin qubits, low magnetic field ( B ) operation extends the coherence time ( T2∗{T}_{2}^{*}T2∗​ T 2 * ) but proportionally reduces the gate speed. In contrast, singlet-triplet (ST) qubits are primarily controlled by the exchange interaction ( J ) and can thus maintain high gate speeds even at low B . However, a large J introduces a significant charge component to the qubit, rendering ST qubits more vulnerable to charge noise when driven. Here, we demonstrate a highly coherent ST hole spin qubit in germanium, operating at both low B and low J . By modulating J , we achieve resonant driving of the ST qubit, obtaining an average gate fidelity of 99.68% and a coherence time of T2∗=1.9 μs{T}_{2}^{*}=1.9\,\mu {{{\rm{s}}}}T2∗​=1.9μs T 2 * = 1.9 μ s . Moreover, by applying the resonant drive continuously, we realize a dressed ST qubit with a tenfold increase in coherence time ( T2ρ∗=20.3 μs{T}_{2\rho }^{*}=20.3\,\mu {{{\rm{s}}}}T2ρ∗​=20.3μs T 2 ρ * = 20.3 μ s ). Frequency modulation of the driving signal enables universal control, with an average gate fidelity of 99.63%. Our results demonstrate the potential for extending coherence times while preserving high-fidelity control of germanium-based ST qubits, paving the way for more efficient operations in semiconductor-based quantum processors.
Hole spin qubits are frontrunner platforms for scalable quantum computers because of their large spin-orbit interaction that enables ultrafast all-electric qubit control at low power. The fastest spin qubits to date are defined in long quantum dots with two tight confinement directions, when the driving field is aligned to the smooth direction. However, in these systems the lifetime of the qubit is strongly limited by charge noise, a major issue in hole qubits. We propose here a different, scalable qubit design, compatible with planar CMOS technology, where the hole is confined in a curved germanium quantum well surrounded by silicon. This design takes full advantage of the strong spin-orbit interaction of holes, and at the same time suppresses charge noise in a wide range of configurations, enabling highly coherent, ultrafast qubit gates. While here we focus on a Si\mathrm{Si}Si/Ge\mathrm{Ge}Ge/Si\mathrm{Si}Si curved quantum well, our design is also applicable to different semiconductors. These devices allow for ultrafast operations even in short quantum dots by a transversal electric field. This additional driving mechanism relaxes the demanding design constraints, and offers a way to reliably interface spin qubits in a single quantum dot to microwave photons. By considering state-of-the-art high-impedance resonators and realistic qubit designs, we estimate interaction strengths of a few hundreds of megahertz, largely exceeding the decay rate of spins and photons. Reaching such a strong coupling regime in hole spin qubits will be a significant step towards high-fidelity entangling operations between distant qubits, as well as fast single-shot readout, and could pave the way towards the implementation of a large-scale semiconducting quantum processor.
Hole spins in silicon quantum dots are a promising platform for quantum computing due to their strong intrinsic spin-orbit coupling (SOC), which enables fast, all-electrical control. However, this coupling also increases their susceptibility to charge noise, thereby limiting coherence times. Moreover, holes in silicon are also affected by hyperfine interactions with residual nuclear spins in the silicon substrate, introducing a non-negligible source of low-frequency noise. Here, we implement a phase-modulated concatenated continuous driving (CCD) technique for hole spin qubits to suppress low-frequency noise through microwave phase modulation. This approach stabilizes Rabi oscillations and extends the oscillation decay time compared to the conventional method. Furthermore, by defining a qubit in the CCD frame, we achieve coherent control while simultaneously protecting the qubit from noise, confirming coherence protection during gate operations. These results demonstrate a viable route toward noise-robust hole spin qubits.
Hole spin qubits hosted in Germanium quantum dots are promising candidates for scalable quantum computing. The strong spin-orbit interaction can enable fast and all-electrical quantum control. Furthermore, the platform can implement universal quantum control using only baseband signals, which may mitigate the impact of crosstalk and microwave-induced heating. At the same time, spin-orbit interaction gives rise to an anisotropic exchange interaction, whose potential for implementing two-qubit gates has remained largely unexplored. However, the current performance of operating a hole-based quantum computer is mostly limited by dephasing due to low-frequency charge noise. In this work, we propose a novel two-qubit gate protocol for Germanium hole spin qubits operated in the gapless regime. This gate protocol exploits the anisotropic exchange interaction between neighboring spins and utilizes a composite pulse scheme implemented solely through electrical baseband signals. Using this approach, we predict high-fidelity two-qubit controlled-Z operations that can suppress exchange-energy fluctuations, offering a pathway toward fault-tolerant semiconductor quantum processors.