Electrical Control of Optically Active Single Spin Qubits in ZnSe
Amirehsan Alizadehherfati, Yuxi Jiang, Nils von den Driesch, Christine Falter, Yurii Kutovyi, Jasvith Raj Basani, Amirehsan Boreiri, Alexander Pawlis, Edo Waks
quant-phSubmitted Dec 25, 2025• Announced Dec 26, 2025• Revised Jan 12, 2026 (v3)
Electrons bound to shallow donors in ZnSe quantum wells are promising candidates for optically addressable spin qubits and single-photon sources. However, their optical coherence and indistinguishability are often limited by spectral broadening arising from charge fluctuations in the local environment. Here, we report electrical control of single donor qubits in ZnSe quantum wells. The applied field induces a DC Stark shift that tunes the emission energy over a range exceeding 30 times the inhomogeneous linewidth, effectively compensating for emitter-to-emitter variations. Concurrently, the field stabilizes trap occupancy, yielding a twofold reduction in optical linewidth and the suppression of spectral wandering. A statistical model based on trap dynamics qualitatively reproduces these observations and elucidates the mechanism of field-assisted charge noise suppression. Our results identify electrical control as a versatile pathway to significantly improve optical and spin addressability.
Electrons bound to shallow donors in ZnSe quantum wells are promising candidates for optically addressable spin qubits and single-photon sources. However, their optical coherence and indistinguishability are often limited by spectral broadening arising from charge fluctuations in the local environment. Here, we report electrical control of single donor qubits in ZnSe quantum wells. The applied field induces a DC Stark shift that tunes the emission energy over a range exceeding 30 times the inhomogeneous linewidth, effectively compensating for emitter-to-emitter variations. Concurrently, the field stabilizes trap occupancy, yielding a twofold reduction in optical linewidth and the suppression of spectral wandering. A statistical model based on trap dynamics qualitatively reproduces these observations and elucidates the mechanism of field-assisted charge noise suppression. Our results identify electrical control as a versatile pathway to significantly improve optical and spin addressability.
Semiconductor hole spins offer a pathway to extended coherence times by decoupling from nuclear magnetic noise, while their spin-orbit coupling enables fast all-electrical control. In ZnSe, however, realizing this potential has been limited by p-doping challenges. Here, we circumvent this limit by optically activating acceptors within the ZnSe quantum well. We isolate a single-hole spin bound to a shallow acceptor, confirmed by antibunching and accessed via the fast (244 ps) radiative recombination of a bound exciton. Magnetic and Raman spectroscopy of the ground state reveal an effective hole g-factor of 0.7 and an optical resonance linewidth of 26.7 GHz. Complementary first-principles simulations, together with the experimental results, provide evidence that points toward nitrogen as the most likely acceptor impurity. These results introduce a promising new platform for optically active spin qubits and single-photon sources in ZnSe.
Coherent spin-photon interfaces are essential for scalable quantum networks, but their realization requires optically bright transitions, long-lived spin coherence, and complete coherent control. Donor-bound electron spins in II-VI semiconductors offer an attractive platform for optically active spin qubits because they combine strong donor-bound exciton transitions in a direct-bandgap material with a potentially nuclear-spin-free environment. However, coherent control of an individual optically active donor spin has remained elusive. Here we demonstrate optical initialization, coherent control, and readout of a single donor-bound electron spin in ZnSe. Using spin-selective donor-bound exciton optical transitions, we initialize the electron spin and directly resolve its spin-relaxation dynamics. We achieve coherent spin control with off-resonant picosecond optical pulses, as demonstrated by spin Rabi oscillations and Ramsey interference. We further coherently drive two spin-selective optical transitions and observe high-contrast coherent population trapping, demonstrating the formation of an optically controlled dark state. At higher driving strengths, multiple dark resonances reveal the hyperfine interaction between the electron and the I = 3/2 Cl nucleus. These results establish the first coherent optical control of a single donor electron spin in a II-VI semiconductor and identify isolated optical donors as a promising platform for solid-state optically active qubits.
Single-photon sources that are bright, pure, and interference-ready are essential for quantum communication and photonic quantum information processing, but many solid-state platforms still rely on bulky optical excitation, careful alignment, and post-selection to achieve useful linewidth, stability, and brightness. Scalable quantum photonics instead requires turnkey quantum-light engines that can be triggered on demand, stabilized against environmental noise, and efficiently interfaced with fibers or photonic circuits. This review surveys recent progress in electronic and photonic integration of single quantum emitters in two-dimensional materials, focusing on localized excitonic emitters in transition metal dichalcogenides and defect-based color centers in hexagonal boron nitride. On the electronic side, we discuss electrical injection, fast modulation, electrostatic stabilization, and Stark tunability as routes to suppress blinking, spectral wandering, and charge-noise-induced broadening. On the photonic side, we review waveguide and resonator platforms that funnel emission into well-defined optical modes and, in some cases, enhance radiative rates through the Purcell effect. We connect these integration strategies to key source metrics, including single-photon purity, brightness, spectral stability, and photon indistinguishability. We conclude that the next stage of progress will depend on co-designed electronic and photonic architectures that jointly optimize on-demand operation, stabilization, tunability, and packaging-compatible optical interfacing.
For quantum information applications, nitrogen-vacancy (NV) centers in diamond combine many of the advantages of atomic systems (optical access, millisecond spin-coherence times) with the engineering flexibility of solid-state devices. Recent demonstrations of coherent coupling between photons and individual NV-center spins [1,2] provide a route to integrating NV-center qubits within photonic networks and for on-demand generation of entangled single-spin/single-photon pairs. Such applications require the ability to tune the NV-center zero-phonon optical transitions, to compensate for natural sample inhomogeneities which perturb the electronic orbital states. Here we demonstrate the ability to electrically control the orbitals of individual NV centers by applying voltages to micron-scale surface gates [3]. Surprisingly, the local electric field experienced by an NV center is significantly enhanced by a photoinduced space charge resulting from photoionization of deep donor impurities within the diamond, even in high-purity single-crystal material (< 5 ppb nitrogen content). Since the photoinduced electric fields are reproducible as a function of gate voltage and are predominantly directed perpendicular to the diamond surface, we can harness them to obtain three-dimensional control of the local electric field vector with surface gates alone. To demonstrate this technique, we tune the excited-state orbital doublet of a strained NV center to degeneracy, as required for some spin-photon entanglement protocols [2], and then adjust the optical transition frequency, showing that we can tune multiple NV centers to have the same degenerate transition energy. This method should enable the coherent coupling of multiple NV center spins to indistinguishable photons within a scalable photonic network.
Optically addressable shallow donors in ZnO combine efficient spin-selective optical transitions with the potential for long spin coherence in an isotopically purifiable host lattice, making them an attractive platform for spin-photon quantum technologies. A key missing capability, however, has been coherent control beyond the small-angle rotations accessible with ultrafast optical pulses. Here we demonstrate coherent microwave control of implanted 115In donors in ZnO. Resonant optical pumping initializes and reads out the donor electron spin. Pulsed optically-detected magnetic resonance resolves the ten hyperfine transitions associated with the coupled 115In nuclear spin (I = 9/2) and reveals optical-pumping-induced nuclear spin polarization. We observe coherent Rabi oscillations with a maximum Rabi frequency of Ω/2π=36.2±0.7\;MHz, corresponding to a π-pulse time of 13.8$\pm$0.3\;ns, and characterize the spin coherence using Ramsey, Hahn echo and dynamical-decoupling measurements. Unexpectedly, the measured coherence is substantially shorter than reported in previous optical studies of donor spins in ZnO at high magnetic field. Control experiments rule out several simple explanations including microwave heating and instantaneous diffusion from the driven donor ensemble, leaving an open question regarding the origin of decoherence at low magnetic field in microwave-controlled ZnO donors. These results establish microwave control of ZnO donor qubits with resonant optical access to specific donor species. More broadly, they demonstrate that coherent microwave control can be achieved in optically addressable spin systems with nanosecond-scale inhomogeneous dephasing, enabling field-, temperature-, and materials-dependent studies of coherence-limiting mechanisms and the development of optically interfaced electron-nuclear spin registers.
Among the many solid-state emitters being explored for scalable quantum technologies, the silicon T centre is a leading candidate offering long-lived spin qubits, a telecommunications-band spin-photon interface, and integration with on-chip photonic circuits. However, nanophotonic integration broadens both the inhomogeneous spectral distribution and individual emitter linewidths. Here, we integrate single T centres into silicon nanophotonic cavities with p-i-n diodes for local electronic control. These devices enable Stark tuning up to 30 GHz, sufficient to bring 55(2)% of on-chip T centres into mutual resonance, and demonstrate tunable lifetime reduction across the cavity resonance. A model of the joint excitation probability shows an orders-of-magnitude increase in entanglement rate by tuning distinct emitters into mutual resonance. Luminescence modulation at high reverse biases reveals a transition to a dark charge state. Finally, bias-induced modulation of the optical transition splitting uncovers a potential mechanism for electrically driven excited-state spin mixing via spin-orbit coupling. Localized and individual spectral tuning increases the yield of performant silicon spin-photon interfaces and the number of devices per chip available for large-scale entanglement and quantum information technologies.