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arXiv:2610.36423

Coherent Optical Control of a Single Donor Electron Spin

Yuxi Jiang, Amirehsan Alizadehherfati, Christine Falter, Jasvith R. Basani, Nils von den Driesch, Yurii Kutovyi, Jan Seelbinder, Alexander Pawlis, Edo Waks

quant-phSubmitted Oct 27, 2026• Announced Oct 28, 2026
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Abstract

Coherent spin-photon interfaces are essential for scalable quantum networks, but their realization requires optically bright transitions, long-lived spin coherence, and complete coherent control. Donor-bound electron spins in II-VI semiconductors offer an attractive platform for optically active spin qubits because they combine strong donor-bound exciton transitions in a direct-bandgap material with a potentially nuclear-spin-free environment. However, coherent control of an individual optically active donor spin has remained elusive. Here we demonstrate optical initialization, coherent control, and readout of a single donor-bound electron spin in ZnSe. Using spin-selective donor-bound exciton optical transitions, we initialize the electron spin and directly resolve its spin-relaxation dynamics. We achieve coherent spin control with off-resonant picosecond optical pulses, as demonstrated by spin Rabi oscillations and Ramsey interference. We further coherently drive two spin-selective optical transitions and observe high-contrast coherent population trapping, demonstrating the formation of an optically controlled dark state. At higher driving strengths, multiple dark resonances reveal the hyperfine interaction between the electron and the I = 3/2 Cl nucleus. These results establish the first coherent optical control of a single donor electron spin in a II-VI semiconductor and identify isolated optical donors as a promising platform for solid-state optically active qubits.

AI Summary

The paper addresses whether an individual optically active donor electron spin in a II–VI semiconductor can be coherently controlled. It studies a single chlorine donor in a ZnSe/ZnMgSe quantum-well nanopost at 3.6 K, using spin-selective donor-bound-exciton transitions for initialization and fluorescence readout. Off-resonant 2.3-ps optical pulses produce spin-population oscillations versus pulse power, fitted to rotations reaching $5\pi/2$. Two-pulse Ramsey measurements show a $16\pm1$ ps precession period at 4 T, consistent with the measured electron $g$-factor. Coherent population trapping (CPT) under two-frequency optical driving produces a dark resonance with contrast $0.83\pm0.02$. Density-matrix fitting gives an inhomogeneous spin-dephasing time $T_2^*=21.9$ ns, consistent with calculations of dephasing from the natural-abundance host nuclear-spin bath. Stronger driving reveals four CPT dips consistent with hyperfine coupling to the chlorine nucleus, which has $I=3/2$. Pump–delay–probe measurements give a population-loss timescale of $18.5\pm3.8\,\mu\mathrm{s}$. Comparing opposite spin preparations and an unpolarized reference attributes this decay primarily to charge tunneling rather than spin flips; the inferred intrinsic spin-flip time has a one-sided 90% confidence lower bound of $0.51$ ms. The Ramsey delay range is limited to 1.2 ns, so it does not independently resolve the inferred dephasing time. Optical rotations become damped at higher power, and optical linewidths remain substantially above the lifetime limit. Charge stabilization, isotopic purification, nuclear-spin control, cavity integration, and spin–photon entanglement remain prospective developments.

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Coherent spin-photon interfaces are essential for scalable quantum networks, but their realization requires optically bright transitions, long-lived spin coherence, and complete coherent control. Donor-bound electron spins in II-VI semiconductors offer an attractive platform for optically active spin qubits because they combine strong donor-bound exciton transitions in a direct-bandgap material with a potentially nuclear-spin-free environment. However, coherent control of an individual optically active donor spin has remained elusive. Here we demonstrate optical initialization, coherent control, and readout of a single donor-bound electron spin in ZnSe. Using spin-selective donor-bound exciton optical transitions, we initialize the electron spin and directly resolve its spin-relaxation dynamics. We achieve coherent spin control with off-resonant picosecond optical pulses, as demonstrated by spin Rabi oscillations and Ramsey interference. We further coherently drive two spin-selective optical transitions and observe high-contrast coherent population trapping, demonstrating the formation of an optically controlled dark state. At higher driving strengths, multiple dark resonances reveal the hyperfine interaction between the electron and the I = 3/2 Cl nucleus. These results establish the first coherent optical control of a single donor electron spin in a II-VI semiconductor and identify isolated optical donors as a promising platform for solid-state optically active qubits.
The paper addresses whether an individual optically active donor electron spin in a II–VI semiconductor can be coherently controlled. It studies a single chlorine donor in a ZnSe/ZnMgSe quantum-well nanopost at 3.6 K, using spin-selective donor-bound-exciton transitions for initialization and fluorescence readout.
Off-resonant 2.3-ps optical pulses produce spin-population oscillations versus pulse power, fitted to rotations reaching 5π/25\pi/25π/2. Two-pulse Ramsey measurements show a 16±116\pm116±1 ps precession period at 4 T, consistent with the measured electron ggg-factor. Coherent population trapping (CPT) under two-frequency optical driving produces a dark resonance with contrast 0.83±0.020.83\pm0.020.83±0.02. Density-matrix fitting gives an inhomogeneous spin-dephasing time T2∗=21.9T_2^*=21.9T2∗​=21.9 ns, consistent with calculations of dephasing from the natural-abundance host nuclear-spin bath. Stronger driving reveals four CPT dips consistent with hyperfine coupling to the chlorine nucleus, which has I=3/2I=3/2I=3/2.
Pump–delay–probe measurements give a population-loss timescale of 18.5±3.8 μs18.5\pm3.8\,\mu\mathrm{s}18.5±3.8μs. Comparing opposite spin preparations and an unpolarized reference attributes this decay primarily to charge tunneling rather than spin flips; the inferred intrinsic spin-flip time has a one-sided 90% confidence lower bound of 0.510.510.51 ms.
The Ramsey delay range is limited to 1.2 ns, so it does not independently resolve the inferred dephasing time. Optical rotations become damped at higher power, and optical linewidths remain substantially above the lifetime limit. Charge stabilization, isotopic purification, nuclear-spin control, cavity integration, and spin–photon entanglement remain prospective developments.
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Identification of the I10_{10}10​ Donor in ZnO as a Sn--Li Complex with Large Hyperfine Interaction
Donor impurities in wide direct band gap semiconductors provide a promising platform for spin--photon quantum technologies by combining a donor spin qubit with optically addressable transitions. In ZnO, the shallow donor with the largest reported binding energy has long been associated with the I10_{10}10​ bound exciton line, but its microscopic origin has remained unresolved. Here we demonstrate the controlled formation and identification of this donor as a Sn--Li complex through a combination of ion implantation, annealing, optical spectroscopy, and first-principles calculations. Resonant two-laser coherent population trapping measurements reveal an electron--119^{119}119Sn hyperfine interaction of 392±15392 \pm 15392±15\,MHz, establishing a coupled electron--spin--1/2, nuclear--spin--1/2 system with one of the largest hyperfine couplings reported for shallow donors in semiconductors. Density functional theory calculations show that a nearest-neighbor SnZn_{\mathrm{Zn}}Zn​--LiZn_{\mathrm{Zn}}Zn​ complex has favorable formation energetics, donor character with the electron localized on Sn, and an extrapolated hyperfine interaction consistent with experiment. The large donor binding energy and excited-state structure indicate enhanced thermal robustness of the optical transition relative to conventional group--III donors, while the strong hyperfine interaction enables fast electron--nuclear spin control and prospects for direct nuclear--spin--photon interfaces. We further observe efficient optically induced nuclear spin polarization, highlighting a path toward nuclear spin initialization. More broadly, our results reveal how a donor--acceptor complex can access previously unexplored regimes of shallow donor physics, extending the design space of quantum defects beyond isolated substitutional dopants.
Impurity-bound excitons in II-VI semiconductors are promising optically active solid-state spin qubits that combine exceptional optical quantum efficiency with a low-noise spin environment. Previous studies on single impurities in these materials relied on incoherent optical excitation to generate photons. However, many quantum applications require resonant driving of quantum emitters to precisely control optical transitions and maintain coherence of the emission. Here, we demonstrate coherent optical emission of quantum light from a resonantly driven single impurity-bound exciton in ZnSe. The resonantly driven emitter exhibits bright quantum emission that preserves the phase of the resonant drive. It also features an intensity-dependent nonlinear phase shift at low photon numbers. Resonant excitation enables direct measurement of the Debye-Waller factor, determined to be 0.94, which indicates high efficiency emission to the zero-phonon line. Time-resolved resonance fluorescence measurements reveal a fast optically driven ionization process, along with a slower spontaneous ionization process having a lifetime of 21 μ s due to charge tunneling from the impurity. These results pave the way for coherent generation of quantum light and low-photon-number nonlinear optics through resonant excitation of impurity-bound excitons.
Electrons bound to shallow donors in ZnSe quantum wells are promising candidates for optically addressable spin qubits and single-photon sources. However, their optical coherence and indistinguishability are often limited by spectral broadening arising from charge fluctuations in the local environment. Here, we report electrical control of single donor qubits in ZnSe quantum wells. The applied field induces a DC Stark shift that tunes the emission energy over a range exceeding 30 times the inhomogeneous linewidth, effectively compensating for emitter-to-emitter variations. Concurrently, the field stabilizes trap occupancy, yielding a twofold reduction in optical linewidth and the suppression of spectral wandering. A statistical model based on trap dynamics qualitatively reproduces these observations and elucidates the mechanism of field-assisted charge noise suppression. Our results identify electrical control as a versatile pathway to significantly improve optical and spin addressability.
Abstract Solid-state spins are promising as interfaces from stationary qubits to single photons for quantum communication technologies. Semiconductor quantum dots have excellent optical coherence, exhibit near-unity collection efficiencies when coupled to photonic structures, and possess long-lived spins for quantum memory. However, the incompatibility of performing optical spin control and single-shot readout simultaneously has been a challenge faced by almost all solid-state emitters. To overcome this, we leverage light-hole mixing to realize a highly asymmetric lambda system in a negatively charged heavy-hole exciton in Faraday configuration. By compensating GHz-scale differential Stark shifts, induced by unequal coupling to Raman control fields, and by performing nuclear-spin cooling, we achieve quantum control of an electron-spin qubit with a π-pulse contrast of 97.4% while preserving spin-selective optical transitions with a cyclicity of 471 (50). We demonstrate this scheme for both GaAs and InGaAs quantum dots, and show that it is compatible with the operation of a nuclear quantum memory. Our approach thus enables repeated emission of indistinguishable photons together with qubit control, as required for single-shot readout, photonic cluster-state generation, and quantum repeater technologies.
Solid-state spins are promising as interfaces from stationary qubits to single photons for quantum communication technologies. Semiconductor quantum dots have excellent optical coherence, exhibit near-unity collection efficiencies when coupled to photonic structures, and possess long-lived spins for quantum memory. However, the incompatibility of performing optical spin control and single-shot readout simultaneously has been a challenge faced by almost all solid-state emitters. To overcome this, we leverage light-hole mixing to realize a highly asymmetric lambda system in a negatively charged heavy-hole exciton in Faraday configuration. By compensating GHz-scale differential Stark shifts, induced by unequal coupling to Raman control fields, and by performing nuclear-spin cooling, we achieve quantum control of an electron-spin qubit with a π-pulse contrast of 97.4% while preserving spin-selective optical transitions with a cyclicity of 471 (50). We demonstrate this scheme for both GaAs and InGaAs quantum dots, and show that it is compatible with the operation of a nuclear quantum memory. Our approach thus enables repeated emission of indistinguishable photons together with qubit control, as required for single-shot readout, photonic cluster-state generation, and quantum repeater technologies.