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arXiv:2512.07619

Quantum Diamond Microscopy for Non-Destructive Failure Analysis of an Integrated Fan-Out Package-on-Package iPhone Chip

Bartu Bisgin, Marwa Garsi, Andreas Welscher, Michael Hanke, Fleming Bruckmaier

quant-phSubmitted Dec 8, 2025• Announced Dec 9, 2025
arXivHTMLPDF

Abstract

The increasing complexity of advanced semiconductor packages, driven by chiplet architectures and 2.5D/3D integration, challenges conventional failure localization methods such as lock-in thermography (LIT) and complicates current Failure Analysis (FA) workflows. Dense redistribution layers and buried interconnects limit the ability of established techniques to understand failure mechanisms non-destructively. In this work, we validate quantum diamond microscopy (QDM) based on nitrogen-vacancy (NV) centers in diamond as a non-destructive localization method through magnetic current path imaging at the package level. Using commercial Integrated Fan-Out Package-on- Package (InFO-PoP) devices from iPhones, we showcase a complete FA workflow that includes QDM to localize a short-type failure at an Integrated Passive Device (IPD) at the package backside. We showcase that the QDM results provide invaluable information on top of conventional techniques and can significantly enhance root-cause identification in package-level FA workflows. This work demonstrates the potential of QDM for broader integration into semiconductor chip and package analysis workflows.

Comments
12 pages, 5 figures

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The increasing complexity of advanced semiconductor packages, driven by chiplet architectures and 2.5D/3D integration, challenges conventional failure localization methods such as lock-in thermography (LIT) and complicates current Failure Analysis (FA) workflows. Dense redistribution layers and buried interconnects limit the ability of established techniques to understand failure mechanisms non-destructively. In this work, we validate quantum diamond microscopy (QDM) based on nitrogen-vacancy (NV) centers in diamond as a non-destructive localization method through magnetic current path imaging at the package level. Using commercial Integrated Fan-Out Package-on- Package (InFO-PoP) devices from iPhones, we showcase a complete FA workflow that includes QDM to localize a short-type failure at an Integrated Passive Device (IPD) at the package backside. We showcase that the QDM results provide invaluable information on top of conventional techniques and can significantly enhance root-cause identification in package-level FA workflows. This work demonstrates the potential of QDM for broader integration into semiconductor chip and package analysis workflows.
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Wide-field imaging of magnetic signals using ensembles of nitrogen-vacancy (NV) centers in diamond has garnered increasing interest due to its combination of micron-scale resolution, millimeter-scale field of view, and compatibility with diverse samples from across the physical and life sciences. Recently, wide-field NV magnetic imaging based on the Ramsey protocol has achieved uniform and enhanced sensitivity compared to conventional measurements. Here, we integrate the Ramsey-based protocol with spin-bath driving to extend the NV spin dephasing time and improve magnetic sensitivity. We also employ a high-speed camera to enable dynamic wide-field magnetic imaging. We benchmark the utility of this quantum diamond microscope (QDM) by imaging magnetic fields produced from a fabricated wire phantom. Over a 270 × 270 μm2 field of view, a median per-pixel magnetic sensitivity of 4.1(1) nT /Hz is realized with a spatial resolution ≲ 10 μm and sub-millisecond temporal resolution. Importantly, the spatial magnetic noise floor can be reduced to the picotesla scale by time-averaging and signal modulation, which enables imaging of a magnetic-field pattern with a peak-to-peak amplitude difference of about 300 pT. Finally, we discuss potential new applications of this dynamic QDM in studying biomineralization and electrically active cells.
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Nitrogen-vacancy (NV) centers in diamond have become an important instrument for quantum sensing and quantum information science. However, the readout of NV spin state requires bulky optical setups, limiting fabrication of miniaturized compact devices for practical use. Here we realized photoelectrical detection of magnetic resonance as well as Rabi oscillations on a single-defect level. Furthermore, photoelectrical imaging of individual NV centers at room temperature was demonstrated, surpassing conventional optical readout methods by providing high imaging contrast and signal-to-noise ratio. These results pave the way toward fully integrated quantum diamond devices.
We demonstrate widefield magnetic imaging of current flow in hydrogen terminated diamond field effect transistors (FETs) through in-substrate nitrogen vacancy (NV) centers. Hydrogen termination of the diamond surface induces a two dimensional hole gas (2DHG), while an ensemble of near surface NV centers located $ \sim 1~μm$ below the surface enables noninvasive magnetic imaging of current flow with micrometer scale spatial resolution. The FETs were electrically characterized over a range of drain source biases Vds=0V_{ds}= 0Vds​=0 to −15V-15V−15V and gate voltages,Vgs=+3V_{gs}= +3Vgs​=+3 to −9V-9V−9V followed by in situ widefield NV magnetometry during device operation. Magnetic field maps and reconstructed current density distributions directly visualize current injection at the source drain contacts and transport beneath the hBN gated channel. Magnetic field maps reveal current density variations in the channel region owing to non-uniformities or defects in the gate dielectric. In addition, we observe a pronounced enhancement of the drain current (∼600−900μA\sim 600-900 μA∼600−900μA) and a shift in the apparent threshold voltage during laser illumination, reflecting photo induced changes in channel electrostatics. By correlating gate dependent magnetic images with simultaneous electrical measurements, we directly link spatial current distributions to FET transfer characteristics, providing new insight into buried interface transport and non-uniform gating effects in the transistor channel. As the methodology is compatible with top gated FETs, it can be used to map channel current distributions with micrometer resolution in emerging channel materials, such as 2D materials and wide bandgap channels, and establish widefield NV magnetometry as a powerful platform for probing charge transport in transistors and Van der Waals dielectric heterostructures.