Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:2512.03970

Non-radiative energy transfer between boron vacancies in hexagonal boron nitride and other 2D materials

Fraunié Jules, Mikhail M. Glazov, Sébastien Roux, Abraao Cefas Torres-Dias, Cora Crunteanu-Stanescu, Tom Fournier, Maryam S. Dehaghani, Tristan Clua-Provost, Delphine Lagarde, Laurent Lombez, Xavier Marie, Benjamin Lassagne, Thomas Poirier, James H. Edgar, Vincent Jacques, Cedric Robert

cond-mat.mtrl-scicond-mat.mes-hallquant-phSubmitted Dec 3, 2025• Announced Dec 4, 2025
v1 · Dec 3, 2025v2 · Sep 3, 2026
arXivHTMLPDF

Abstract

Boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity. However, the mechanisms responsible for photoluminescence quenching in thin hBN sensing layers when placed in contact with absorptive materials remain largely unexplored. In this Letter, we investigate non-radiative Förster resonance energy transfer (FRET) between $V_B^-$ centers and either monolayer graphene or 2D semiconductors. Strikingly, we find that the FRET rate is negligible for hBN sensing layers thicker than 3 nm, highlighting the potential of $V_B^-$ centers for integration into ultra-thin quantum sensors within van der Waals heterostructures. Furthermore, we experimentally extract the intrinsic radiative decay rate of $V_B^-$ defects.

Related papers

Energy-Transfer-Enhanced Emission and Quantum Sensing of VB- Defects in hBN-PbI2 Heterostructures

Eveline Mayner, Yaroslav Zhumagulov, Cristian de Giorgio +6 more

Spin defects in two-dimensional materials hold significant potential for quantum information technologies and sensing applications. The negatively charged boron vacancy (VB-) in hexagonal boron nitride (hBN) has attracted considerable attention as a quantum sensor due to its demonstrated sensitivity to temperature, magnetic fields, and pressure.1 However, its applications have thus far been limited by inherently dim photoluminescence (PL). By fabricating a van der Waals heterostructure with a sensitizing donor layer, lead iodide (PbI2), we effectively enhance the PL intensity from the VB- by 5-45x, while maintaining compatibility with other heterostructures and vdW optoelectronic platforms. The type-I band alignment at the heterojunction enables efficient exciton migration while suppressing back-electron transfer, and the strong spectral overlap between the PbI2 emission and defect absorption supports efficient fluorescence resonance energy transfer. Ab initio density functional theory (DFT) predicts a photon-ratcheting mechanism that boosts absorption and emission while maintaining magnetic resonance (ODMR) contrast through minimal hybridization. Experimentally, the heterostructure exhibits enhanced continuous-wave ODMR sensitivity and functions as a precise probe of external magnetic fields. This work establishes a proof-of-concept for amplifying weak defect signals in nanomaterials, highlighting a new strategy for engineering their optical and magnetic responses.

cond-mat.mtrl-sciCross-listedarXiv:2602.02256•Feb 3, 2026

Boron vacancies in bulk h-BN created by high-energy He+ irradiation

P. G. Vilyuzhanina, S. V. Bolshedvorskii, R. Isayev +11 more

While color centers in diamond and other three-dimensional crystals are nowadays key elements of several types of sensors, color centers in two-dimensional materials are rapidly developing and promise high-tech applications. One of the interesting centers in 2D materials is the negatively charged boron vacancy in hexagonal boron nitride (h-BN), which has already shown some potential for magnetometry, but the reliable creation of boron vacancies remains challenging. Here, we demonstrate the fabrication of negatively charged boron vacancy color centers in bulk h-BN via implantation of helium ions at ~1 MeV, as confirmed by characteristic photoluminescence and optically detected magnetic resonance. The resonance has a width of 180 MHz and exhibits the expected Zeeman shift of the resonance lines. The depth of the color center along the c-axis of the h-BN crystal was measured and compared with predictions from Stopping and Range of Ions in Matter modeling. The experimental value and the modeled prediction are consistent within the reported uncertainties, as their 1σ intervals overlap, although the experiment shows a greater depth and a wider distribution.

quant-pharXiv:2609.39535•Oct 1, 2026

Aromatic molecular emitters in a hexagonal boron nitride stack

Tianyu Fang, Ricardo Gioia Alvarez, Babak Behjati +8 more

Single polycyclic aromatic hydrocarbon molecules embedded in organic matrices have proven to be an excellent family of narrow-linewidth quantum emitters. Extending this host-guest setting to van der Waals materials offers the opportunity to combine the preeminent properties of molecular emitters with the access to the versatility of two-dimensional hetero-structures and devices. In this work, we incorporate perylene molecules into multi-layered hexagonal boron nitride stacks and observe gigahertz-narrow zero-phonon-line transitions at cryogenic temperatures. We unambiguously verify the origins of photon emission through vibronic spectra analysis. By combining hyperspectral localization measurements with quantum chemistry calculations, we examine the insertion mechanisms of perylene molecules in the hexagonal boron nitride stacks, and conclude that pristine hBN layers tend to expel molecules from the sandwich, while extended morphological defects, hydroxyl groups and unpassivated boron and nitrogen atoms assist to stabilize molecular bindings to hBN. Our work provides valuable insight for future work to deterministically integrate narrow-linewidth molecular emitters into van der Waals devices.

physics.opticsCross-listedarXiv:2607.18427•Jul 22, 2026

Coherent State Manipulation of Single Hexagonal Boron Nitride Quantum Emitters

Johann A. Preuß, Daniel Groll, Robert Schmidt +6 more

Single-photon sources are crucial components for building quantum networks and communications, but their optical coherent control remains a significant challenge in the development of quantum technologies. Recently, single-photon sources in atomically thin 2D materials such as transition metal dichalcogenides and van der Waals materials have emerged as promising solid-state quantum light emitters [1]. Hexagonal boron nitride (hBN) is a 2D insulator, which hosts optically active states in its band gap that efficiently emit single photons even at room temperature. The wide range of emission wavelengths, narrow emission lines, and convenient tunability of these hBN emitters make them particularly interesting for quantum sensing and wavelength division multiplexed quantum communications. They can also be found in commercially available nanocrystals, making them ideal for creating large arrays of single-photon emitters [2] and efficient coupling to photonic structures, such as 3D-printed microlenses [3].

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)•Jun 26, 2023•0 citations

Room-Temperature Electrical Readout of Spin Defects in van der Waals Materials

Shihao Ru, Liheng An, Haidong Liang +14 more

Negatively charged boron vacancy ($\mathrm{V_B^-}$) in hexagonal boron nitride (hBN) is the most extensively studied room-temperature quantum spin system in two-dimensional (2D) materials. Nevertheless, the current effective readout of $\mathrm{V_B^-}$ spin states is carried out by systematically optical methods. This limits their exploitation in compact and miniaturized quantum devices, which would otherwise hold substantial promise to address quantum sensing and quantum information tasks. In this study, we demonstrated a photoelectric spin readout technique for $\mathrm{V_B^-}$ spins in hBN. The observed photocurrent signals stem from the spin-dependent ionization dynamics of boron vacancies, mediated by spin-dependent non-radiative transitions to a metastable state. We further extend this electrical detection technique to enable the readout of dynamical decoupling sequences, including the Carr-Purcell-Meiboom-Gill (CPMG) protocols, and of nuclear spins via electron-nuclear double resonance. These results provide a pathway toward on-chip integration and real-field exploitation of quantum functionalities based on 2D material platforms.

quant-pharXiv:2511.08874•Nov 13, 2025

Cooperative Emission from Quantum Emitters in Hexagonal Boron Nitride Layers

Igor Khanonkin, Amir Sivan, Le Liu +5 more

Collective light emission from many-body quantum systems is a cornerstone of quantum optics, yet its implementation in solid-state platforms operating under ambient conditions remains highly challenging. Large-bandgap van der Waals materials such as hexagonal boron nitride (hBN) host stable room-temperature single-photon emitters with narrow linewidths across a broad spectral range. However, cooperative radiative effects in this system have not been previously explored. Here we demonstrate collective emission from quantum-emitter ensembles in hBN layers when the emitters are nearly indistinguishable and positioned within a sub-wavelength proximity. Using confocal microscopy and a Hanbury Brown-Twiss (HBT) configuration, we identify both isolated emitters and ensembles activated by localized electron-beam irradiation. Time-resolved photoluminescence measurements reveal a superlinear intensity enhancement and a pronounced acceleration of the radiative decay in tightly confined ensembles, with lifetimes approaching the temporal resolution of our experimental system (about 500 ps), compared to approximately 1.85 ns for single emitters or large, spatially extended ensembles. Complementary second-order photon-correlation measurements exhibit sub-Poissonian antidip consistent with emission from a few indistinguishable emitters. The simultaneous observation of lifetime shortening and enhanced emission provides direct evidence of cooperative emission at room temperature, achieved without optical cavities or cryogenic cooling. These results establish optically active defect ensembles in hBN as a scalable solid-state platform for engineered collective quantum optics in two-dimensional materials, opening avenues toward ultrabright superradiant light sources and nonclassical photonic states for quantum technologies.

quant-pharXiv:2601.21544•Jan 30, 2026
Boron vacancies (VB−V_B^-VB−​) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity. However, the mechanisms responsible for photoluminescence quenching in thin hBN sensing layers when placed in contact with absorptive materials remain largely unexplored. In this Letter, we investigate non-radiative Förster resonance energy transfer (FRET) between VB−V_B^-VB−​ centers and either monolayer graphene or 2D semiconductors. Strikingly, we find that the FRET rate is negligible for hBN sensing layers thicker than 3 nm, highlighting the potential of VB−V_B^-VB−​ centers for integration into ultra-thin quantum sensors within van der Waals heterostructures. Furthermore, we experimentally extract the intrinsic radiative decay rate of VB−V_B^-VB−​ defects.
Spin defects in two-dimensional materials hold significant potential for quantum information technologies and sensing applications. The negatively charged boron vacancy (VB-) in hexagonal boron nitride (hBN) has attracted considerable attention as a quantum sensor due to its demonstrated sensitivity to temperature, magnetic fields, and pressure.1 However, its applications have thus far been limited by inherently dim photoluminescence (PL). By fabricating a van der Waals heterostructure with a sensitizing donor layer, lead iodide (PbI2), we effectively enhance the PL intensity from the VB- by 5-45x, while maintaining compatibility with other heterostructures and vdW optoelectronic platforms. The type-I band alignment at the heterojunction enables efficient exciton migration while suppressing back-electron transfer, and the strong spectral overlap between the PbI2 emission and defect absorption supports efficient fluorescence resonance energy transfer. Ab initio density functional theory (DFT) predicts a photon-ratcheting mechanism that boosts absorption and emission while maintaining magnetic resonance (ODMR) contrast through minimal hybridization. Experimentally, the heterostructure exhibits enhanced continuous-wave ODMR sensitivity and functions as a precise probe of external magnetic fields. This work establishes a proof-of-concept for amplifying weak defect signals in nanomaterials, highlighting a new strategy for engineering their optical and magnetic responses.
While color centers in diamond and other three-dimensional crystals are nowadays key elements of several types of sensors, color centers in two-dimensional materials are rapidly developing and promise high-tech applications. One of the interesting centers in 2D materials is the negatively charged boron vacancy in hexagonal boron nitride (h-BN), which has already shown some potential for magnetometry, but the reliable creation of boron vacancies remains challenging. Here, we demonstrate the fabrication of negatively charged boron vacancy color centers in bulk h-BN via implantation of helium ions at ~1 MeV, as confirmed by characteristic photoluminescence and optically detected magnetic resonance. The resonance has a width of 180 MHz and exhibits the expected Zeeman shift of the resonance lines. The depth of the color center along the c-axis of the h-BN crystal was measured and compared with predictions from Stopping and Range of Ions in Matter modeling. The experimental value and the modeled prediction are consistent within the reported uncertainties, as their 1σ intervals overlap, although the experiment shows a greater depth and a wider distribution.
Single polycyclic aromatic hydrocarbon molecules embedded in organic matrices have proven to be an excellent family of narrow-linewidth quantum emitters. Extending this host-guest setting to van der Waals materials offers the opportunity to combine the preeminent properties of molecular emitters with the access to the versatility of two-dimensional hetero-structures and devices. In this work, we incorporate perylene molecules into multi-layered hexagonal boron nitride stacks and observe gigahertz-narrow zero-phonon-line transitions at cryogenic temperatures. We unambiguously verify the origins of photon emission through vibronic spectra analysis. By combining hyperspectral localization measurements with quantum chemistry calculations, we examine the insertion mechanisms of perylene molecules in the hexagonal boron nitride stacks, and conclude that pristine hBN layers tend to expel molecules from the sandwich, while extended morphological defects, hydroxyl groups and unpassivated boron and nitrogen atoms assist to stabilize molecular bindings to hBN. Our work provides valuable insight for future work to deterministically integrate narrow-linewidth molecular emitters into van der Waals devices.
Single-photon sources are crucial components for building quantum networks and communications, but their optical coherent control remains a significant challenge in the development of quantum technologies. Recently, single-photon sources in atomically thin 2D materials such as transition metal dichalcogenides and van der Waals materials have emerged as promising solid-state quantum light emitters [1]. Hexagonal boron nitride (hBN) is a 2D insulator, which hosts optically active states in its band gap that efficiently emit single photons even at room temperature. The wide range of emission wavelengths, narrow emission lines, and convenient tunability of these hBN emitters make them particularly interesting for quantum sensing and wavelength division multiplexed quantum communications. They can also be found in commercially available nanocrystals, making them ideal for creating large arrays of single-photon emitters [2] and efficient coupling to photonic structures, such as 3D-printed microlenses [3].
Negatively charged boron vacancy (VB−\mathrm{V_B^-}VB−​) in hexagonal boron nitride (hBN) is the most extensively studied room-temperature quantum spin system in two-dimensional (2D) materials. Nevertheless, the current effective readout of VB−\mathrm{V_B^-}VB−​ spin states is carried out by systematically optical methods. This limits their exploitation in compact and miniaturized quantum devices, which would otherwise hold substantial promise to address quantum sensing and quantum information tasks. In this study, we demonstrated a photoelectric spin readout technique for VB−\mathrm{V_B^-}VB−​ spins in hBN. The observed photocurrent signals stem from the spin-dependent ionization dynamics of boron vacancies, mediated by spin-dependent non-radiative transitions to a metastable state. We further extend this electrical detection technique to enable the readout of dynamical decoupling sequences, including the Carr-Purcell-Meiboom-Gill (CPMG) protocols, and of nuclear spins via electron-nuclear double resonance. These results provide a pathway toward on-chip integration and real-field exploitation of quantum functionalities based on 2D material platforms.
Collective light emission from many-body quantum systems is a cornerstone of quantum optics, yet its implementation in solid-state platforms operating under ambient conditions remains highly challenging. Large-bandgap van der Waals materials such as hexagonal boron nitride (hBN) host stable room-temperature single-photon emitters with narrow linewidths across a broad spectral range. However, cooperative radiative effects in this system have not been previously explored. Here we demonstrate collective emission from quantum-emitter ensembles in hBN layers when the emitters are nearly indistinguishable and positioned within a sub-wavelength proximity. Using confocal microscopy and a Hanbury Brown-Twiss (HBT) configuration, we identify both isolated emitters and ensembles activated by localized electron-beam irradiation. Time-resolved photoluminescence measurements reveal a superlinear intensity enhancement and a pronounced acceleration of the radiative decay in tightly confined ensembles, with lifetimes approaching the temporal resolution of our experimental system (about 500 ps), compared to approximately 1.85 ns for single emitters or large, spatially extended ensembles. Complementary second-order photon-correlation measurements exhibit sub-Poissonian antidip consistent with emission from a few indistinguishable emitters. The simultaneous observation of lifetime shortening and enhanced emission provides direct evidence of cooperative emission at room temperature, achieved without optical cavities or cryogenic cooling. These results establish optically active defect ensembles in hBN as a scalable solid-state platform for engineered collective quantum optics in two-dimensional materials, opening avenues toward ultrabright superradiant light sources and nonclassical photonic states for quantum technologies.