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arXiv:2511.08874

Room-Temperature Electrical Readout of Spin Defects in van der Waals Materials

Shihao Ru, Liheng An, Haidong Liang, Zhengzhi Jiang, Zhiwei Li, Xiaodan Lyu, Feifei Zhou, Hongbing Cai, Yuzhe Yang, Ruihua He, Robert Cernansky, Edwin Hang Tong Teo, Manas Mukherjee, Andrew A. Bettiol, Jesus Zúñiga-Perez, Fedor Jelezko, Weibo Gao

quant-phSubmitted Nov 12, 2025• Announced Nov 13, 2025• Revised Dec 18, 2025 (v2)
v1 · Nov 12, 2025v2 · Dec 18, 2025
arXivHTMLPDF

Abstract

Negatively charged boron vacancy ($\mathrm{V_B^-}$) in hexagonal boron nitride (hBN) is the most extensively studied room-temperature quantum spin system in two-dimensional (2D) materials. Nevertheless, the current effective readout of $\mathrm{V_B^-}$ spin states is carried out by systematically optical methods. This limits their exploitation in compact and miniaturized quantum devices, which would otherwise hold substantial promise to address quantum sensing and quantum information tasks. In this study, we demonstrated a photoelectric spin readout technique for $\mathrm{V_B^-}$ spins in hBN. The observed photocurrent signals stem from the spin-dependent ionization dynamics of boron vacancies, mediated by spin-dependent non-radiative transitions to a metastable state. We further extend this electrical detection technique to enable the readout of dynamical decoupling sequences, including the Carr-Purcell-Meiboom-Gill (CPMG) protocols, and of nuclear spins via electron-nuclear double resonance. These results provide a pathway toward on-chip integration and real-field exploitation of quantum functionalities based on 2D material platforms.

Journal reference
Physical Review Letters 135, 220802 (2025)
DOI
10.1103/dlzw-dhsr
Comments
6 pages, 4 figures for manuscripts, and 9 pages, 8 figures for SI

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Negatively charged boron vacancy (VB−\mathrm{V_B^-}VB−​) in hexagonal boron nitride (hBN) is the most extensively studied room-temperature quantum spin system in two-dimensional (2D) materials. Nevertheless, the current effective readout of VB−\mathrm{V_B^-}VB−​ spin states is carried out by systematically optical methods. This limits their exploitation in compact and miniaturized quantum devices, which would otherwise hold substantial promise to address quantum sensing and quantum information tasks. In this study, we demonstrated a photoelectric spin readout technique for VB−\mathrm{V_B^-}VB−​ spins in hBN. The observed photocurrent signals stem from the spin-dependent ionization dynamics of boron vacancies, mediated by spin-dependent non-radiative transitions to a metastable state. We further extend this electrical detection technique to enable the readout of dynamical decoupling sequences, including the Carr-Purcell-Meiboom-Gill (CPMG) protocols, and of nuclear spins via electron-nuclear double resonance. These results provide a pathway toward on-chip integration and real-field exploitation of quantum functionalities based on 2D material platforms.
Entanglement is central to quantum science and technology. Atomic defects in two-dimensional (2D) van der Waals (vdW) materials offer exciting prospects for quantum sensing, with spatial resolution reaching 1 nm demonstrated using scanning probe techniques. However, entangling qubits in vdW materials remains elusive. Here we report room-temperature quantum entanglement between an optically addressable electron spin and a strongly coupled 13^{13}13C nuclear spin in hexagonal boron nitride (hBN). We extend the electron spin coherence to 38 μμμs with dynamical decoupling, and create maximally entangled Bell states with a fidelity up to 0.89. We further use the nuclear spin as a long-lived quantum memory to enhance AC magnetic field sensing via correlation spectroscopy. These results establish entangled spin qubits in hBN as a robust platform for advanced quantum technologies based on 2D materials.
Spin defects in two-dimensional materials hold significant potential for quantum information technologies and sensing applications. The negatively charged boron vacancy (VB-) in hexagonal boron nitride (hBN) has attracted considerable attention as a quantum sensor due to its demonstrated sensitivity to temperature, magnetic fields, and pressure.1 However, its applications have thus far been limited by inherently dim photoluminescence (PL). By fabricating a van der Waals heterostructure with a sensitizing donor layer, lead iodide (PbI2), we effectively enhance the PL intensity from the VB- by 5-45x, while maintaining compatibility with other heterostructures and vdW optoelectronic platforms. The type-I band alignment at the heterojunction enables efficient exciton migration while suppressing back-electron transfer, and the strong spectral overlap between the PbI2 emission and defect absorption supports efficient fluorescence resonance energy transfer. Ab initio density functional theory (DFT) predicts a photon-ratcheting mechanism that boosts absorption and emission while maintaining magnetic resonance (ODMR) contrast through minimal hybridization. Experimentally, the heterostructure exhibits enhanced continuous-wave ODMR sensitivity and functions as a precise probe of external magnetic fields. This work establishes a proof-of-concept for amplifying weak defect signals in nanomaterials, highlighting a new strategy for engineering their optical and magnetic responses.
Negatively charged boron vacancies (VB−_{\text{B}}^{-}B−​) in hexagonal boron nitride (hBN) comprise a promising quantum sensing platform, optically addressable at room temperature and transferrable onto samples. However, broad hyperfine-split spin transitions of the ensemble pose challenges for quantum sensing with conventional resonant excitation due to limited spectral coverage. While isotopically enriched hBN using 10^{10}10B and 15^{15}15N isotopes (h10^{10}10B15^{15}15N) exhibits sharper spectral features, significant inhomogeneous broadening persists. We demonstrate that, implemented via frequency modulation on an FPGA, a frequency-ramped microwave pulse achieves around 4-fold greater ∣0⟩→∣−1⟩|0\rangle\rightarrow|-1\rangle∣0⟩→∣−1⟩ spin-state population transfer and thus contrast than resonant microwave excitation and thus 16-fold shorter measurement time for spin relaxation based quantum sensing. Quantum dynamics simulations reveal that an effective two-state Landau-Zener model captures the complex relationship between population inversion and pulse length with relaxations incorporated. Our approach is robust and valuable for quantum relaxometry with spin defects in hBN in noisy environments.
The negatively charged boron vacancy ($\VB$) in hexagonal boron nitride (\hBN{}) was the first optically addressable spin qubit identified inside a van der Waals crystal, allowing atomically defined placement relative to a target. Its coherence in bulk \hBN{} is limited by the boron nuclei of the layers flanking the defect plane, which a thin flake removes. Here, we use a generalized cluster-correlation expansion with an extended central-spin block to calculate the Hahn-echo coherence time of $\VB$ in h11^{11}11B15^{15}15N as a function of layer number. Our results show that T2T_2T2​ rises from $199\ns$ in the bulk limit to $653\ns$ in a monolayer, a factor of 3.33.33.3 that is already saturated at three layers and that a sublattice decomposition attributes entirely to boron. The enhancement is confined to low field, is insensitive to stacking registry and twist angle, and requires alignment to within about two degrees, an onset we reproduce with no free parameters. Under dynamical decoupling, a 1/e1/e1/e threshold returns $206\ns$ for every thickness, but this is a zero of the first-shell modulation rather than a decay: measured without a threshold, the layer contrast survives and reaches a factor of 170170170. Layer number thus emerges as a design parameter for $\VB$-based sensing.
Abstract Advances in hybrid quantum systems and their precise control are pivotal for developing advanced quantum technologies. Two-dimensional (2D) materials with optically accessible spin defects have emerged as a promising platform for building integrated quantum spin systems due to their exceptional flexibility and scalability. However, experimentally realizing such systems and demonstrating their superiority remains challenging. Here, we present a hybrid spin system operating under ambient conditions, integrating boron vacancy ( VB−{{\rm{V}}}_{{\rm{B}}}^{-}VB−​ V B − ) spins in 2D hexagonal boron nitride flakes with a single nitrogen vacancy (NV) center in 3D single-crystal diamonds. This combined system achieves full controllability and exhibits enhanced performance for nanoscale magnetic sensing, including an improved dynamic range. Moreover, we investigate the rich many-body spin dynamics within the hybrid system, which enables us to estimate the concentration of VB−{{\rm{V}}}_{{\rm{B}}}^{-}VB−​ V B − spins. This work provides a critical foundation for advancing the development of 2D-3D integrated quantum spin systems.
Boron vacancies (VB−V_B^-VB−​) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity. However, the mechanisms responsible for photoluminescence quenching in thin hBN sensing layers when placed in contact with absorptive materials remain largely unexplored. In this Letter, we investigate non-radiative Förster resonance energy transfer (FRET) between VB−V_B^-VB−​ centers and either monolayer graphene or 2D semiconductors. Strikingly, we find that the FRET rate is negligible for hBN sensing layers thicker than 3 nm, highlighting the potential of VB−V_B^-VB−​ centers for integration into ultra-thin quantum sensors within van der Waals heterostructures. Furthermore, we experimentally extract the intrinsic radiative decay rate of VB−V_B^-VB−​ defects.