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arXiv:2512.02235

Enhanced readout contrast of V2 ensembles in 4H-SiC through resonant optical excitation

Infiter Tathfif, Samuel G. Carter

quant-phSubmitted Dec 1, 2025• Announced Dec 3, 2025
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Abstract

The V2 silicon vacancy defect in 4H-SiC has emerged as a promising system for quantum technologies due to its favorable optical and spin properties and the advantages of the SiC host. However, the readout contrast - an important benchmark for quantum sensing - of V2 ensembles for optically-detected magnetic resonance (ODMR) is relatively low, usually <1$\%$ at room temperature. To overcome this challenge, we resonantly excite the V2 ensembles at cryogenic temperatures and compare the results with the off-resonant case. We report a maximum ODMR contrast of 50$\%$ with only 2 $μ$W of resonant laser power, almost 100 times improvement over off-resonant excitation. We attribute this high readout contrast to a subset of V2 centers that have one spin-selective optical transition resonant with the laser. The ODMR contrast decreases with temperature, approaching the non-resonant contrast by 60 K, likely due to broadening of the optical transition linewidths. We achieve a maximum sensitivity of 100 nT/$\sqrt{Hz}$ with a resonant laser power of 300 $μ$W, while 100 times more non-resonant excitation power is needed to achieve comparable sensitivity.

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18 pages

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The V2 silicon vacancy defect in 4H-SiC has emerged as a promising system for quantum technologies due to its favorable optical and spin properties and the advantages of the SiC host. However, the readout contrast - an important benchmark for quantum sensing - of V2 ensembles for optically-detected magnetic resonance (ODMR) is relatively low, usually <1%\%% at room temperature. To overcome this challenge, we resonantly excite the V2 ensembles at cryogenic temperatures and compare the results with the off-resonant case. We report a maximum ODMR contrast of 50%\%% with only 2 μμμW of resonant laser power, almost 100 times improvement over off-resonant excitation. We attribute this high readout contrast to a subset of V2 centers that have one spin-selective optical transition resonant with the laser. The ODMR contrast decreases with temperature, approaching the non-resonant contrast by 60 K, likely due to broadening of the optical transition linewidths. We achieve a maximum sensitivity of 100 nT/Hz\sqrt{Hz}Hz​ with a resonant laser power of 300 μμμW, while 100 times more non-resonant excitation power is needed to achieve comparable sensitivity.
Optically addressable solid-state color center spin qubits have become important platforms for quantum information processing, quantum networks and quantum sensing. The readout of color center spin states with optically detected magnetic resonance (ODMR) technology is traditionally based on Stokes excitation, where the energy of the exciting laser is higher than that of the emission photons. Here, we investigate an unconventional approach using anti-Stokes excitation to detect the ODMR signal of silicon vacancy defect spin in silicon carbide, where the exciting laser has lower energy than the emitted photons. Laser power, microwave power and temperature dependence of the anti-Stokes excited ODMR are systematically studied, in which the behavior of ODMR contrast and linewidth is shown to be similar to that of Stokes excitation. However, the ODMR contrast is several times that of the Stokes excitation. Coherent control of silicon vacancy spin under anti-Stokes excitation is then realized at room temperature. The spin coherence properties are the same as those of Stokes excitation, but with a signal contrast that is around three times greater. To illustrate the enhanced spin readout contrast under anti-Stokes excitation, we also provide a theoretical model. The experiments demonstrate that the current anti-Stokes excitation ODMR approach has promising applications in quantum information processing and quantum sensing.
Silicon carbide (SiC) has become a key player in the realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results highligh the key role of NV centers in SiC as a potential candidate for quantum information processing.
This work presents an industrially scalable, power-efficient and high-performance quantum magnetometer chip based on proprietary 4H-silicon carbide (SiC) technology, leveraging wafer-scale fabrication techniques to optimize V2 silicon vacancy color centers for highly reproducible, industry-grade fabrication with precise control of depth and density. The integration of these color center ensembles into a planar silicon carbide waveguide enables efficient excitation of a large ensemble and simplifies fluorescence extraction compared to standard confocal methods. We report continuous-wave (CW) optically detected magnetic resonance measurements, complemented by Rabi, Ramsey, and Hahn-echo sequences, which demonstrate coherent capabilities of the large embedded ensemble of V2 centers. Based on the data, our device exhibits sensor shot-noise limited sensitivities 2-3 orders of magnitude lower compared to more complex confocal techniques. Collectively, these advancements simplify the quantum sensor architecture, enhance sensitivity, and streamline optical excitation and collection, thereby paving the way for the development of next-generation SiC-quantum sensing technologies.
The silicon vacancy center in Silicon Carbide (SiC) provides an optically addressable qubit at room temperature in its spin- 32\frac{3}{2}23​ electronic state. However, optical spin initialization and readout are less efficient compared to those of spin-1 systems, such as nitrogen-vacancy centers in diamond, under non-resonant optical excitation. Spin-dependent fluorescence exhibits contrast only between ∣m=±3/2⟩| m=\pm 3/2\left.\right\rangle∣m=±3/2⟩ and ∣m=±1/2⟩| m=\pm 1/2\left.\right\rangle∣m=±1/2⟩ states, and optical pumping does not create a population difference between ∣+1/2⟩| +1/2\left.\right\rangle∣+1/2⟩ and ∣−1/2⟩| -1/2\left.\right\rangle∣−1/2⟩ states. Thus, operating one qubit (e.g., {∣+3/2⟩,∣+1/2⟩}\left\{| +3/2\left.\right\rangle ,| +1/2\left.\right\rangle \right\}{∣+3/2⟩,∣+1/2⟩} states) leaves the population in the remaining state ( ∣−1/2⟩| -1/2\left.\right\rangle∣−1/2⟩ ) unaffected, contributing to background in optical readout. To mitigate this problem, we propose a sensing scheme based on duplex qubit operation in the quartet, using microwave pulses with two resonant frequencies to simultaneously operate {∣+3/2⟩,∣+1/2⟩}\left\{| +3/2\left.\right\rangle ,| +1/2\left.\right\rangle \right\}{∣+3/2⟩,∣+1/2⟩} and {∣−1/2⟩,∣−3/2⟩}\left\{| -1/2\left.\right\rangle ,| -3/2\left.\right\rangle \right\}{∣−1/2⟩,∣−3/2⟩} . Experimental results demonstrate that this approach doubles signal contrast in optical readout and improves sensitivity in AC magnetometry compared to simplex operation.
The nitrogen-vacancy (NV) centers in diamond have the advantages of stable triaxial structure, ultra-long electron spin coherence time and simple optical readout at room temperature. A nitrogen atom in the diamond crystal replaces a carbon atom and a vacancy is generated at the adjacent position, forming a point defect in the C3v space group structure. Its ground state and excited state are both spin triplet states. It is the key to achieving efficient preparation of optical initial state and extracting NV color center’s information in the researches of highly sensitive sensing magnetic detection, temperature detection, biological imaging, quantum computing, etc. However, there was no systematic study on relevant parameters of laser for high-concentration NV color center’s samples in previous experimental studies. Based on a high concentration diamond NV ensemble, we use pulsed optical detection magnetic resonance (ODMR) technology to systematically study the relationship among laser initial polarization time, information reading time and laser power, and the influence of laser incident polarization angle on the accuracy of sensing information. The effects of various laser parameters on the NV1 peak of ODMR on the [111] axis of the NVs of diamond are also investigated. The contrast of ODMR increases firstly with a sigmoid function and then decreases with an e-exponential function as the information reading time increases. The incident polarization angle of the laser is sinusoidal, with a period of 90°. According to the above experimental results, we finally choose the appropriate experimental parameters at 45.8 W/cm2 (300 μs of polarization, 700 ns, reading time, laser incident angle is 220°) for ODMR test. Compared with previous experimental parameters (polarization time was 50 us, read the time of 3000 ns, laser incident angle was 250°), the experimental results show that the contrast of ODMR increases from 2.1% to 4.6%, and the typical magnetic sensitivity is improved from 21.6 nT/Hz1/2 to 5.6 nT/Hz1/2. The optimization of the optical control of NVs in solid diamond is realized. The above results provide an effective support for the detection of high-sensitivity manipulation sensing based on high-concentration NV ensemble.
As promising quantum sensors, nitrogen-vacancy (N-VVV) centers in diamond have been widely used in frontier studies in condensed-matter physics, material science, and life sciences. In practical applications, weak laser excitation is favorable as it reduces the side effects of laser irradiation, such as phototoxicity and heating. Here we report a combined theoretical and experimental study of (near) zero-field optically detected magnetic resonance (ODMR) of N-VVV-center ensembles under weak 532-nm laser excitation. In this region, both the width and splitting of the ODMR spectra decrease with increasing laser power. This power dependence is reproduced with a model that accounts for the laser-induced charge neutralization of $\mathrm{N}\text{\ensuremath{-}}{V}^{\ensuremath{-}}$--N+{\mathrm{N}}^{+}N+ pairs, which alters the local electric field environment. These results are useful for the understanding and development of N-VVV-based quantum sensing in light-sensitive applications.