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arXiv:2510.05910

Superconducting Nanowire Single Photon Detectors based on NbRe nitride ultrafilms

Francesco Avitabile, Francesco Colangelo, M. Yu. Mikhaı̆lov, Z. Makhdoumi Kakhaki, Ankit Kumar, Iman Esmaeil Zadeh, C. Attanasio, C. Cirillo

Published Oct 7, 2025• 0 citations
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Abstract

The influence of the reactive DC sputtering parameters on the superconducting properties of NbReN ultrathin films was investigated. A detailed study of the current-voltage characteristics of the plasma was performed to optimize the superconducting critical temperature, Tc. The thickness dependence of Tc for the films deposited under different conditions was analyzed down to the ultrathin limit. Optimized films were used to fabricate superconducting nanowire single photon detectors which, at T=3.5 K, show saturated internal detection efficiency (IDE) up to a wavelength of 1301 nm and 95% IDE at 1548 nm with recovery times and timing jitter of about 8 ns and 28 ps, respectively.

DOI
10.48550/arxiv.2510.05910

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arXiv:1905.06091•May 15, 2019•1 citation
The influence of the reactive DC sputtering parameters on the superconducting properties of NbReN ultrathin films was investigated. A detailed study of the current-voltage characteristics of the plasma was performed to optimize the superconducting critical temperature, Tc. The thickness dependence of Tc for the films deposited under different conditions was analyzed down to the ultrathin limit. Optimized films were used to fabricate superconducting nanowire single photon detectors which, at T=3.5 K, show saturated internal detection efficiency (IDE) up to a wavelength of 1301 nm and 95% IDE at 1548 nm with recovery times and timing jitter of about 8 ns and 28 ps, respectively.
The influence of the reactive DC sputtering parameters on the superconducting properties of NbReN ultrathin films was investigated. A detailed study of the current–voltage characteristics of the plasma was performed to optimize the superconducting critical temperature, Tc. The thickness dependence of Tc for the films deposited under different conditions was analyzed down to the ultrathin limit. Optimized films were used to fabricate superconducting nanowire single photon detectors which, at T=3.5 K, show saturated internal detection efficiency (IDE) up to a wavelength of 1301 nm and 95% IDE at 1548 nm with recovery times and timing jitter of about 8 ns and 28 ps, respectively.
At the present time, ultrahigh performance superconducting nanowire single-photon detectors are the key elements in a variety of devices from biological research to quantum communications and computing. Accurate tuning of superconducting material properties is a powerful resource for fabricating single-photon detectors with desired properties. Here, we report on the major theoretical relations between ultrathin niobium nitride (NbN) film properties and superconducting nanowire single-photon detector characteristics, as well as the dependence of ultrathin NbN film properties on reactive magnetron sputtering recipes. Based on this study, we formulate the exact requirements for ultrathin NbN films for ultrahigh performance superconducting nanowire single-photon detectors. Then, we experimentally studied the properties of ultrathin NbN films (morphology, crystalline structure, critical temperature, and sheet resistance) on silicon, sapphire, silicon dioxide, and silicon nitride substrates sputtered with various recipes. We demonstrate ultrathin NbN films (obtained with more than 100 films deposition) with a wide range of critical temperature from 2.5 to 12.1 K and sheet resistance from 285 to 2000 Ω/sq and report a sheet resistance evolution of more than 40% within two years. Finally, we found out that one should use ultrathin NbN films with a specific critical temperature near 9.5 K and a sheet resistance of about 350 Ω/sq for ultrahigh performance state-of-the-art superconducting nanowire single-photon detectors at 1550 nm wavelength.
N superconducting films and show that a Nb fraction of x = 0.62 allows for the fabrication of detectors from films as thick as 9 nm and covering an active area of 20 µm, with a wide detection saturation plateau at telecom wavelengths and in particular at 1550 nm. This is a signature of an internal detection efficiency saturation, achieved while maintaining the high time resolution associated with NbTiN and operation at 2.5K. With our optimized recipe, we reliably fabricated detectors with high critical current densities reaching a saturation plateau at 1550 nm with 80% system detection efficiency and with a FWHM timing jitter as low as 19.5 ps.
Abstract We present a comprehensive study of molybdenum nitride (MoN) thin film deposition using direct current reactive magnetron sputtering. We have investigated the effect of various deposition conditions on the superconducting and electrical properties of the films. Furthermore, we have shown that meander-shaped single-photon detectors made from 5 nm MoN films have saturated quantum detection efficiency at the telecom wavelength of 1550 nm. Our results indicate that MoN may be a material of interest for practical applications of low-temperature superconductors, including single-photon detectors and transition-edge sensors.
High-quality ultrathin films of niobium nitride (NbN) are developed by the plasma-enhanced atomic layer deposition (PEALD) technique. Superconducting nanowire single-photon detectors patterned from this material exhibit high switching currents and saturated internal efficiencies over a broad bias range at a telecommunication wavelength of 1550 nm. Statistical analyses on hundreds of fabricated devices show a near-unity throughput yield due to the exceptional homogeneity of the films. The ALD-NbN material represents an ideal superconducting material for fabricating large single-photon detector arrays combining high efficiency, low jitter, and low dark counts.
Nbx_xx​Ti1−x_{1-x}1−x​N low timing jitter single-photon detectors with unity internal efficiency at 1550 nm and 2.5 K
The requirements in quantum optics experiments for high single photon detection efficiency, low timing jitter, low dark count rate and short dead time have been fulfilled with the development of superconducting nanowire single photon detectors. Although they offer a detection efficiency above 90%, achieving a high time resolution in devices made of amorphous materials is a challenge, particularly at temperatures above 0.8 K. Devices made from niobium nitride and niobium titanium nitride allow to reach the best timing jitter, but in turn have stronger requirements in terms of film quality to achieve a high efficiency. Here we take advantage of the flexibility of reactive co-sputter deposition to tailor the composition of NbxTi1-xN superconducting films, and show that a Nb fraction of x = 0.62 allows for the fabrication of detectors from films as thick as 9 nm and covering an active area of 20 μm, with a wide detection saturation plateau at telecom wavelengths and in particular at 1550 nm. This is a signature of an internal detection efficiency saturation, achieved while maintaining the high time resolution associated with NbTiN and operation at 2.5K. With our optimized recipe, we reliably fabricated detectors with high critical current densities reaching a saturation plateau at 1550 nm with 80% system detection efficiency, and with a FWHM timing jitter as low as 19.47 ps.