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arXiv:2010.10634 · Superconductor Science and Technology

Superconducting MoN thin films prepared by DC reactive magnetron sputtering for nanowire single-photon detectors

Lily Hallett, Ilya Charaev, Akshay Agarwal, Andrew E. Dane, Marco Colangelo, Di Zhu, Karl K. Berggren

Published Jan 13, 2021• 17 citations
arXivHTMLPDF

Abstract

Abstract We present a comprehensive study of molybdenum nitride (MoN) thin film deposition using direct current reactive magnetron sputtering. We have investigated the effect of various deposition conditions on the superconducting and electrical properties of the films. Furthermore, we have shown that meander-shaped single-photon detectors made from 5 nm MoN films have saturated quantum detection efficiency at the telecom wavelength of 1550 nm. Our results indicate that MoN may be a material of interest for practical applications of low-temperature superconductors, including single-photon detectors and transition-edge sensors.

DOI
10.1088/1361-6668/abda5f

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arXiv:2605.25597•May 25, 2026•0 citations
Abstract We present a comprehensive study of molybdenum nitride (MoN) thin film deposition using direct current reactive magnetron sputtering. We have investigated the effect of various deposition conditions on the superconducting and electrical properties of the films. Furthermore, we have shown that meander-shaped single-photon detectors made from 5 nm MoN films have saturated quantum detection efficiency at the telecom wavelength of 1550 nm. Our results indicate that MoN may be a material of interest for practical applications of low-temperature superconductors, including single-photon detectors and transition-edge sensors.
We report the fabrication of superconducting nanowire single-photon detector (SNSPD, SSPD) based on molybdenum nitride (MoN) film with and without a cavity structure. Ultrathin polycrystalline γ-Mo2N films with aTcabout 6 K were obtained by reactive DC magnetron sputtering. The absorption efficiency of the device was calculated by the finite-difference time-domain (FDTD) method using the optical constants of MoN determined by ellipsometry measurements. The SNSPD with a meander of 150-nm-width and 7-nm-thick nanowire showed a long saturation plateau in the bias current dependence of the system detection efficiency (SDE) at visible wavelength. The SNSPD with a cavity structure showed an SDE of 37% and a timing jitter of 79 ps at a wavelength of 1560 nm. The results show that MoN is a promising alternative to amorphous superconductors for high-performance SNSPD.
The influence of the reactive DC sputtering parameters on the superconducting properties of NbReN ultrathin films was investigated. A detailed study of the current–voltage characteristics of the plasma was performed to optimize the superconducting critical temperature, Tc. The thickness dependence of Tc for the films deposited under different conditions was analyzed down to the ultrathin limit. Optimized films were used to fabricate superconducting nanowire single photon detectors which, at T=3.5 K, show saturated internal detection efficiency (IDE) up to a wavelength of 1301 nm and 95% IDE at 1548 nm with recovery times and timing jitter of about 8 ns and 28 ps, respectively.
The influence of the reactive DC sputtering parameters on the superconducting properties of NbReN ultrathin films was investigated. A detailed study of the current-voltage characteristics of the plasma was performed to optimize the superconducting critical temperature, Tc. The thickness dependence of Tc for the films deposited under different conditions was analyzed down to the ultrathin limit. Optimized films were used to fabricate superconducting nanowire single photon detectors which, at T=3.5 K, show saturated internal detection efficiency (IDE) up to a wavelength of 1301 nm and 95% IDE at 1548 nm with recovery times and timing jitter of about 8 ns and 28 ps, respectively.
We systematically investigated the detection performance of Al nanostrips for single photons at various wavelengths. The Al films were deposited using magnetron sputtering, and the sophisticated nanostructures and morphology of the deposited films were revealed through high-resolution transmission electron microscopy. The fabricated Al meander nanostrips, with a thickness of 4.2 nm and a width of 178 nm, exhibited a superconducting transition temperature of 2.4 K and a critical current of approximately 5 μA at 0.85 K. While the Al nanostrips demonstrated a saturated internal quantum efficiency for 405-nm photons, the internal detection efficiency exhibited an exponential dependence on bias current without any saturation tendency for 1550-nm photons. This behavior can be attributed to the relatively large diffusion coefficient and coherence length of the Al films. By further narrowing the nanostrip width, the Al-SNSPDs remain capable of effectively detecting single telecom photons to facilitate practical applications.
At the present time, ultrahigh performance superconducting nanowire single-photon detectors are the key elements in a variety of devices from biological research to quantum communications and computing. Accurate tuning of superconducting material properties is a powerful resource for fabricating single-photon detectors with desired properties. Here, we report on the major theoretical relations between ultrathin niobium nitride (NbN) film properties and superconducting nanowire single-photon detector characteristics, as well as the dependence of ultrathin NbN film properties on reactive magnetron sputtering recipes. Based on this study, we formulate the exact requirements for ultrathin NbN films for ultrahigh performance superconducting nanowire single-photon detectors. Then, we experimentally studied the properties of ultrathin NbN films (morphology, crystalline structure, critical temperature, and sheet resistance) on silicon, sapphire, silicon dioxide, and silicon nitride substrates sputtered with various recipes. We demonstrate ultrathin NbN films (obtained with more than 100 films deposition) with a wide range of critical temperature from 2.5 to 12.1 K and sheet resistance from 285 to 2000 Ω/sq and report a sheet resistance evolution of more than 40% within two years. Finally, we found out that one should use ultrathin NbN films with a specific critical temperature near 9.5 K and a sheet resistance of about 350 Ω/sq for ultrahigh performance state-of-the-art superconducting nanowire single-photon detectors at 1550 nm wavelength.
Nitrogen-doped Tungsten-Rhenium superconducting alloys were recently proposed as a promising material platform for superconducting nanowire single-photon detectors (SNSPDs), offering a favorable balance between high normal state resistivity and tunable superconducting properties. In this work, we report on the fabrication and characterization of SNSPDs based on thin W0.75Re0.25 films deposited by reactive DC magnetron sputtering in a mixed Ar/N2 atmosphere. Meander detectors with 70 nm linewidth exhibit saturated internal detection efficiency (IDE) up to 1310 nm and 85.3% IDE at 1550 nm at 2.5 K, with sub-nanosecond rise times, decay times of the order of a few nanoseconds, and timing jitter of 73.2 ps measured with room temperature amplifiers.