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arXiv:2506.00193 · Physical Review Applied

Statistics of strongly coupled defects in superconducting qubits

S. Weeden, D.C. Harrison, S. Patel, M. Snyder, E. J. Blackwell, Gabriel Spahn, S. Abdullah, Y. Takeda, B. L. T. Plourde, John M. Martinis, Robert McDermott

Published Mar 3, 2026• 2 citations
arXivHTMLPDF

Abstract

Decoherence in superconducting qubits is dominated by defects that reside at amorphous interfaces. Interaction with discrete defects results in dropouts that complicate qubit operation and lead to non-Gaussian tails in the distribution of qubit energy relaxation time T 1 that degrade system performance. Spectral diffusion of defects over time leads to fluctuations in T 1 , posing a challenge for calibration. In this work, we measure the energy relaxation of flux-tunable transmons over a range of operating frequencies. We vary qubit geometry to change the interface participation ratio by more than an order of magnitude. Our results are consistent with loss dominated by discrete interfacial defects. Moreover, we are able to localize the dominant defects to within 500 nm of the qubit junctions, where residues from liftoff are present. These results motivate alternative approaches to qubit junction fabrication that avoid the residues intrinsic to the liftoff process.

DOI
10.1103/4ssz-6ctb

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Decoherence in superconducting qubits is dominated by defects that reside at amorphous interfaces. Interaction with discrete defects results in dropouts that complicate qubit operation and lead to non-Gaussian tails in the distribution of qubit energy relaxation time T 1 that degrade system performance. Spectral diffusion of defects over time leads to fluctuations in T 1 , posing a challenge for calibration. In this work, we measure the energy relaxation of flux-tunable transmons over a range of operating frequencies. We vary qubit geometry to change the interface participation ratio by more than an order of magnitude. Our results are consistent with loss dominated by discrete interfacial defects. Moreover, we are able to localize the dominant defects to within 500 nm of the qubit junctions, where residues from liftoff are present. These results motivate alternative approaches to qubit junction fabrication that avoid the residues intrinsic to the liftoff process.
The dominant contribution to the energy relaxation of state-of-the-art superconducting qubits is often attributed to their coupling to an ensemble of material defects which behave as two-level systems. These defects have varying microscopic characteristics which result in a wide range of observable defect properties such as resonant frequencies, coherence times, and coupling rates to qubits ggg. Here, we investigate strategies to mitigate losses to the family of defects that strongly couple to qubits ($g/2\ensuremath{\pi}\ensuremath{\ge}0.5\mathrm{M}\mathrm{Hz}$). Such strongly coupled defects occur more rarely and are particularly detrimental to the qubit coherence when resonant with the qubit, and to the fidelities of operations relying on frequency excursions, such as flux-activated two-qubit gates. To assess their impact, we perform swap spectroscopy on 92 frequency-tunable qubits and quantify the spectral density of these strongly coupled modes. We show that the frequency configuration of the defects is rearranged by warming the sample to room temperature, whereas the total number of defects on a processor tends to remain constant. We then explore methods for fabricating qubits with a reduced number of strongly coupled defect modes by systematically measuring their spectral density for decreasing Josephson junction dimensions and for various surface cleaning methods. Our results provide insights into the properties of strongly coupled defect modes and show the benefits of minimizing Josephson junction dimensions to improve qubit properties.
Abstract Superconducting qubits are a leading candidate for quantum computing but display temporal fluctuations in their energy relaxation times T 1 . This introduces instabilities in multi-qubit device performance. Furthermore, autocorrelation in these time fluctuations introduces challenges for obtaining representative measures of T 1 for process optimization and device screening. These T 1 fluctuations are often attributed to time varying coupling of the qubit to defects, putative two level systems (TLSs). In this work, we develop a technique to probe the spectral and temporal dynamics of T 1 in single junction transmons by repeated T 1 measurements in the frequency vicinity of the bare qubit transition, via the AC-Stark effect. Across 10 qubits, we observe strong correlations between the mean T 1 averaged over approximately nine months and a snapshot of an equally weighted T 1 average over the Stark shifted frequency range. These observations are suggestive of an ergodic-like spectral diffusion of TLSs dominating T 1 , and offer a promising path to more rapid T 1 characterization for device screening and process optimization.
Decoherence and parameter fluctuations are two of the mayor obstacles for solid-state quantum computing. In this work, decoherence in superconducting qubits of the transmon type is investigated. For this purpose, a time-multiplexed measurement protocol was developed and applied in long-term measurements. The resulting simultaneous measurement of the qubit's relaxation and dephasing rate, as well as its resonance frequency enables analysis of correlations between these parameters. A spectral noise analysis complements these measurements. Together, the results agree well with the interacting defect model of two-level-systems and yield information about the microscopic origin of the intrinsic decoherence mechanisms in Josephson qubits. Our measurements show inherent correlations between dephasing and fluctuations in qubit frequency on the timescale of seconds to days, which is attributed to the influence of individual defects, located close to conductor edges. Cross-correlation and spectral noise analysis confirm this interpretation and ascribe the source of fluctuation to interactions between thermal fluctuators and surface defects. Single defects reducing the coherence of qubits by up to one order of magnitude are a major challenge for future quantum computers. Non-tunable qubits are intrinsically insensitive to some decoherence channels and thus ideal for this fundamental analysis. However, to widen the focus and contrast the results of different material systems, we pursue the fabrication of voltage controlled gatemon qubits. In the course of this work, the theoretical foundation and technical implementation of transmon qubits based on regular Josephson weak links, and semiconducting nanowires is given. The experimental design and measurement setup are explained in detail. Our findings make continuous re-calibration a necessity in today's solid-state qubits, although new materials or processing techniques might mitigate the problem. However, the results of this work imply that fundamental improvements of qubit parameter stability are necessary in order to realize scalable and coherent qubit circuits.
In superconducting transmon qubits, macroscopic characterization is the primary method for probing performance metrics, such as relaxation T1 and dephasing T2 times, resonance frequency, and quality factor. While these measurements can aid our understanding of the dielectric loss of a transmon, they do not allow us to characterize the structural and chemical inhomogeneity of the interfaces which directly impacts this energy loss. These fundamental materials problems must be studied using transmission electron microscopy (TEM) to provide insight into these defects across different qubit interfaces at an atomic scale. In this contribution, we will examine qubits, such as those shown in Figure 1, fabricated at Fermi National Accelerator Laboratory (SQMS Center) [1]. The qubit devices consist of superconducting metal base layers, typically sputter deposited Nb or Ta, and Al/AlOx/Al junctions, where the AlOx barrier is roughly 3nm in thickness and prepared through in-situ oxidation [2]. Characterizing this system prior to its integration within a superconducting radio frequency cavity establishes a baseline for the system, allowing us to isolate fabrication-induced defects before they manifest in performance degradation during quantum measurements. With the samples and fabrication process well known on a macroscopic scale, we study the atomic structure and chemistry of different heterointerfaces within the Josephson junction (JJ) of the transmon qubit and between the sapphire substrate and Nb resonator pads to identify potential defects contributing to the decoherence for qubits constructed with particular geometries. To resolve these defects, atomic-resolution imaging, energy-dispersive X-ray spectroscopy (EDS), and electron-energy loss spectroscopy (EELS) are performed using the JEOL-ARM200CF, an aberration-corrected scanning transmission electron microscope (STEM). Figure 2 provides a clear image of the stacked layers formed as the JJ, but with the addition of a platinum and carbon protective coating added during the focus ion beam (FIB) milling process to preserve pristine Al/AlOx/Al interfaces. 4D-STEM approaches, such as ptychography, orientation mapping and nanoscale diffraction will be employed to further study the layered interfaces and defects in real space and reciprocal space. These techniques can also provide insight into any damage that incurs during lamella preparation using the FIB [3]. Magnetic field-free atomic resolution imaging, differential phase contrast mapping, and monochromated EELS can be achieved using the new MARS-MONO STEM (JEM-Z200MF) without inducing current fluctuations or magnetic field related distortions [4]. By integrating this work across the functional interfaces of the transmon qubits and their different geometries, we will identify possible structural and chemical defects which limit device performance using our multi-modal approach [5]. SQMS fabricated transmon qubits fabricated on HEMEX sapphire substrate imaged via a) ZEISS optical microscope, b) SEM and c) EDS. TEM image of Josephson Junction layered interface at on JEOL-ARM200CF on the ClearView camera with a 200kV accelerating voltage.
Using a fluxonium qubit with in situ tunability of its Josephson energy, we characterize its energy relaxation at different flux biases as well as different Josephson energy values. The relaxation rate at qubit energy values, ranging more than 1 order of magnitude around the thermal energy kBT{k}_{B}TkB​T, can be quantitatively explained by a combination of dielectric loss and 1/f1/f1/f flux noise with a crossover point. The amplitude of the 1/f1/f1/f flux noise is consistent with that extracted from the qubit dephasing measurements at the flux sensitive points. In the dielectric loss dominant regime, the loss is consistent with that arising from the electric dipole interaction with two-level-system (TLS) defects. In particular, by increasing the Josephson energy, thus decreasing the qubit frequency at the flux insensitive spot, we find that the qubit exhibits increasingly weaker coupling to TLS defects, which is desirable for high-fidelity quantum operations. Our work establishes a generic noise model for the design of high coherence fluxonium and future generations of noise resilient superconducting qubits.
The quasiparticle density observed in low-temperature superconducting circuits is several orders of magnitude larger than the value expected at thermal equilibrium. The tunneling of this excess of quasiparticles across Josephson junctions is recognized as one of the main loss and decoherence mechanisms in superconducting qubits. Here we present a unified impedance theory that accounts for quasiparticle energy loss in circuit regions both far from and near to (across) junctions. Our theory leverages the recent experimental demonstration that the excess quasiparticles are in quasiequilibrium [Connolly et al., Phys. Rev. Lett. 132, 217001 (2024)] and uses a generalized fluctuation-dissipation theorem to predict the amount of charge and flux noise generated by them. We compute the resulting energy relaxation time T1{T}_{1}T1​ in transmon qubits with and without junction asymmetric gap engineering, and show that quasiparticles residing away from junctions can play a dominant role in the former case. They also may provide an upper limit for resonator quality factors if the density of amorphous two-level systems is reduced. In addition, we show that charge noise from quasiparticles leads to flux noise that is logarithmic in frequency, giving rise to a ``nearly white'' contribution that is comparable to the flux noise observed in flux qubits. This contrasts with amorphous two-level systems, whose associated flux noise is shown to be super-Ohmic. We discuss how this quasiparticle flux noise can limit ${T}_{2}^{\ensuremath{\ast}}$ coherence times in flux-tunable qubits. The final conclusion is that asymmetric gap engineering can greatly reduce noise and increase coherence times in superconducting qubits.