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arXiv:2302.08110 · Physical Review Applied

Characterization of Loss Mechanisms in a Fluxonium Qubit

Hantao Sun, Feng Wu, Hsiang‐Sheng Ku, Xizheng Ma, Jin Qin, Zhijun Song, Tenghui Wang, Gengyan Zhang, Jingwei Zhou, Yaoyun Shi, Hui‐Hai Zhao, Chunqing Deng

Published Sep 8, 2023• 23 citations
arXivHTMLPDF

Abstract

Using a fluxonium qubit with in situ tunability of its Josephson energy, we characterize its energy relaxation at different flux biases as well as different Josephson energy values. The relaxation rate at qubit energy values, ranging more than 1 order of magnitude around the thermal energy ${k}_{B}T$, can be quantitatively explained by a combination of dielectric loss and $1/f$ flux noise with a crossover point. The amplitude of the $1/f$ flux noise is consistent with that extracted from the qubit dephasing measurements at the flux sensitive points. In the dielectric loss dominant regime, the loss is consistent with that arising from the electric dipole interaction with two-level-system (TLS) defects. In particular, by increasing the Josephson energy, thus decreasing the qubit frequency at the flux insensitive spot, we find that the qubit exhibits increasingly weaker coupling to TLS defects, which is desirable for high-fidelity quantum operations. Our work establishes a generic noise model for the design of high coherence fluxonium and future generations of noise resilient superconducting qubits.

DOI
10.1103/physrevapplied.20.034016

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Using a fluxonium qubit with in situ tunability of its Josephson energy, we characterize its energy relaxation at different flux biases as well as different Josephson energy values. The relaxation rate at qubit energy values, ranging more than 1 order of magnitude around the thermal energy kBT{k}_{B}TkB​T, can be quantitatively explained by a combination of dielectric loss and 1/f1/f1/f flux noise with a crossover point. The amplitude of the 1/f1/f1/f flux noise is consistent with that extracted from the qubit dephasing measurements at the flux sensitive points. In the dielectric loss dominant regime, the loss is consistent with that arising from the electric dipole interaction with two-level-system (TLS) defects. In particular, by increasing the Josephson energy, thus decreasing the qubit frequency at the flux insensitive spot, we find that the qubit exhibits increasingly weaker coupling to TLS defects, which is desirable for high-fidelity quantum operations. Our work establishes a generic noise model for the design of high coherence fluxonium and future generations of noise resilient superconducting qubits.
Noise from material defects at device interfaces is known to limit the coherence of superconducting circuits, yet our understanding of the defect origins and noise mechanisms remains incomplete. Here we investigate the temperature and in-plane magnetic-field dependence of energy relaxation in a low-frequency fluxonium qubit, where the sensitivity to flux noise and charge noise arising from dielectric loss can be tuned by applied flux. We observe an approximately linear scaling of flux noise with temperature TTT and a power-law dependence of dielectric loss T3T^3T3 up to 100 mK. Additionally, we find that the dielectric-loss-limited T1T_1T1​ decreases with weak in-plane magnetic fields, suggesting a potential magnetic-field response of the underlying charge-coupled defects. We implement a multi-level decoherence model in our analysis, motivated by the widely tunable matrix elements and transition energies approaching the thermal energy scale in our system. These findings offer insight for fluxonium coherence modeling and should inform microscopic theories of intrinsic noise in superconducting circuits.
Fluxonium superconducting qubits have demonstrated long coherence times and high single- and two-qubit gate fidelities, making them a favorable building block for superconducting quantum processors. We investigate the dominant limitations to fluxonium qubit energy relaxation time T1T_1T1​ using a set of eight planar, aluminum-on-silicon qubits. We find that a circuit-based model for capacitive dielectric loss best captures the frequency dependence of T1T_1T1​, which we analyze within both a two-level and a six-level energy relaxation model. We convert the measured T1T_1T1​ into an effective capacitive quality factor QCeffQ_\mathrm{C}^{\mathrm{eff}}QCeff​ to compare qubits on equal footing, accounting for independently estimated contributions from 1/f1/f1/f flux noise and radiative loss to the control and readout circuitry. We apply this methodology to compare qubits from two fabrication processes: a baseline process and one that applies a fluorine-based wet treatment prior to Josephson junction deposition. We resolve a small improvement of (13.8 ±\pm± 8.4)%)\%)% in the process mean QCeffQ_\mathrm{C}^{\mathrm{eff}}QCeff​, indicating that the fluorine treatment may have reduced loss from the metal-substrate interface, but did not address the primary source of loss in these fluxonium qubits.
Abstract Recent studies have shown that parasitic two-level systems (TLS) in superconducting qubits, which are a leading source of decoherence, can have relaxation times longer than the qubits themselves. However, the standard techniques used to characterize qubit relaxation is only valid for measuring T 1 under the Born-Markov approximation and could mask environmental memory effects in practice. Here, we introduce two-timescale relaxometry, a technique to probe the qubit and environment relaxation simultaneously and efficiently. We apply it to high-coherence fluxonium qubits over a frequency range of 0.1-0.4 GHz, and reveal a discrete spectrum of TLS with millisecond lifetimes. Our analysis of the spectrum is consistent with a random distribution of TLS in the aluminum oxide tunnel barrier of the Josephson junction chain of the fluxonium, with a spectral and volumetric density and average electric dipole similar to previous TLS studies at much higher frequencies. Our study suggests that investigating and mitigating TLS in the junction chain is crucial to the development of various types of noise-protected qubits in circuit QED.
We report superconducting fluxonium qubits with coherence times largely limited by energy relaxation and reproducibly satisfying T 2 > 100 μs (T 2 > 400 μs in one device).Moreover, given the state-of-the-art values of the surface loss tangent and the 1=f flux-noise amplitude, the coherence time can be further improved beyond 1 ms.Our results violate a common viewpoint that the number of Josephson junctions in a superconducting circuit-over 10 2 here-must be minimized for best qubit coherence.We outline how the unique to fluxonium combination of long coherence time and large anharmonicity can benefit both gate-based and adiabatic quantum computing.
Much attention has focused on the transmon architecture for large-scale superconducting quantum devices; however, the fluxonium qubit has emerged as a possible successor. With a shunting inductor in parallel to a Josephson junction, the fluxonium offers larger anharmonicity and stronger protection against dielectric loss, leading to higher coherence times as compared to conventional transmon qubits. The interplay between the inductive and Josephson energy potentials of the fluxonium qubit leads to a rich dispersive-shift landscape when tuning the external flux. Here, we propose to exploit the features in the dispersive shift to improve qubit readout. Specifically, we report on theoretical simulations showing improved readout times and error rates by performing the readout at a flux-bias point with large dispersive shift. We expand the scheme to include different error channels and show that with an integration time of 155 ns, flux-pulse-assisted readout offers about a 5 -times improvement in the signal-to-noise ratio. Moreover, we show that the performance improvement persists in the presence of finite measurement efficiency combined with quasistatic flux noise and also when considering the increased Purcell rate at the flux-pulse-assisted readout point. We suggest a set of reasonable energy parameters for the fluxonium architecture that will allow for the implementation of our proposed flux-pulse-assisted readout scheme.
Introducing disorder in the superconducting materials has been considered promising to enhance the electromagnetic impedance and realize noise-resilient superconducting qubits. Despite a number of pioneering implementations, the understanding of the correlation between the material disorder and the qubit coherence is still developing. Here, we demonstrate a systematic characterization of fluxonium qubits with the superinductors made by spinodal titanium-aluminum-nitride with varied disorder. From qubit noise spectroscopy, the flux noise and the dielectric loss are extracted as a measure of the coherence properties. Our results reveal that the 1/f α flux noise dominates the qubit decoherence around the flux-frustration point, strongly correlated with the material disorder; while the dielectric loss are largely similar under a wide range of material properties. From the flux-noise amplitudes, the areal density (σ) of the phenomenological spin defects and material disorder are found to be approximately correlated by σ∝ρxx3\sigma \propto {\rho }_{xx}^{3}σ∝ρxx3​ , or effectively (kFl)−3{({k}_{F}l)}^{-3}(kF​l)−3 . This work has provided new insights on the origin of decoherence channels beyond surface defects and within the superconductors, and could serve as a useful guideline for material design and optimization. Disorder has emerged as a promising tool to manipulate properties of superconducting circuits. Here the authors demonstrate the use of disordered spinodal superconductor for fluxonium qubit fabrication and reveal an interesting correlation between the material disorder and the 1/f-type flux noise.