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arXiv:2502.17247

High quality superconducting tantalum resonators with beta phase defects

Ritika Dhundhwal, Haoran Duan, Lucas Brauch, Soroush Arabi, D. Fuchs, Amir A. Haghighirad, Alexander Welle, Florentine Scharwaechter, Sudip Pal, Marc Scheffler, José M. Palomo, Zaki Leghtas, Anil Murani, Horst Hahn, Jasmin Aghassi‐Hagmann, Kübel, Christian, Wulf Wulfhekel, Ioan M. Pop, Thomas J.G. Reisinger

Published Feb 24, 2025• 0 citations
arXivHTMLPDF

Abstract

For practical superconducting quantum processors, orders of magnitude improvement in coherence is required, motivating efforts to optimize hardware design and explore new materials. Among the latter, the coherence of superconducting transmon qubits has been shown to improve by forming the qubit capacitor pads from $α$-tantalum, avoiding the meta-stable $β$-phase that forms when depositing tantalum at room temperature, and has been previously identified to be a source of microwave losses. In this work, we show lumped element resonators containing $β$-phase tantalum in the form of inclusions near the metal-substrate interface with internal quality factors ($Q_\text{i}$) up to $(5.0 \pm 2.5) \times 10^6$ in the single photon regime. They outperform resonators with no sign of the $β$-phase in x-ray diffraction and thermal quasi-particle loss. Our results indicate that small concentrations of $β$-phase can be beneficial, enhancing critical magnetic fields and potentially, for improving coherence in tantalum based superconducting circuits.

DOI
10.48550/arxiv.2502.17247

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For practical superconducting quantum processors, orders of magnitude improvement in coherence is required, motivating efforts to optimize hardware design and explore new materials. Among the latter, the coherence of superconducting transmon qubits has been shown to improve by forming the qubit capacitor pads from ααα-tantalum, avoiding the meta-stable βββ-phase that forms when depositing tantalum at room temperature, and has been previously identified to be a source of microwave losses. In this work, we show lumped element resonators containing βββ-phase tantalum in the form of inclusions near the metal-substrate interface with internal quality factors (QiQ_\text{i}Qi​) up to (5.0±2.5)×106(5.0 \pm 2.5) \times 10^6(5.0±2.5)×106 in the single photon regime. They outperform resonators with no sign of the βββ-phase in x-ray diffraction and thermal quasi-particle loss. Our results indicate that small concentrations of βββ-phase can be beneficial, enhancing critical magnetic fields and potentially, for improving coherence in tantalum based superconducting circuits.
For practical superconducting quantum processors, orders of magnitude improvement in coherence is required, motivating efforts to optimize hardware design and explore new materials. Among the latter, the coherence of superconducting transmon qubits has been shown to improve by forming the qubit capacitor pads from α-tantalum, avoiding the metastable β-phase that forms when depositing tantalum at room temperature, and has been previously identified to be a source of microwave losses. In this work, we show lumped element resonators containing β-phase tantalum in the form of inclusions near the metal–substrate interface with internal quality factors (Qi) up to 5.0 ± 2.5×106 in the single photon regime. They perform at least as good as resonators with no sign of the β-phase in x-ray diffraction and thermal quasi-particle loss. Our results indicate that small concentrations of β-phase can be beneficial, enhancing critical magnetic fields and potentially, for improving coherence in tantalum-based superconducting circuits.
Tantalum-based transmon qubits are a promising platform for building large-scale quantum processors. So far, these qubits have been made from tantalum films grown exclusively in the alpha phase (α-Ta). The beta phase of tantalum (\{beta}-Ta) readily nucleates at room temperature, making it attractive for scalable qubit fabrication. However, \{beta}-Ta is widely believed to be detrimental to qubit performance because it has a lower superconducting critical temperature than α-Ta. We challenge this prevailing belief by fabricating low-loss transmon qubits from \{beta}-Ta films on sapphire. Across 11 qubits, the mean time-averaged quality factor is (5.6 +/- 2.3) x 10^6, with the best qubit recording a time-averaged quality factor of (10.1 +/- 1.3) x 10^6. Resonator studies demonstrate that the dominant microwave loss channel is surface two-level systems, with the surface loss contribution for \{beta}-Ta being about twice that of α-Ta. \{beta}-Ta films exhibit significant kinetic inductance, consistent with an estimated magnetic penetration depth of (1.78 +/- 0.02) μm. This work establishes \{beta}-Ta on sapphire as a material platform for realizing low-loss transmon qubits and other superconducting devices such as compact resonators, kinetic inductance detectors, and quasiparticle traps.
Abstract The use of α -tantalum in superconducting circuits has enabled a considerable improvement in the coherence time of transmon qubits. The standard approach to grow α -tantalum thin films on silicon involves heating the substrate, which takes several hours per deposition and prevents the integration of this material with wafers containing temperature-sensitive components. We report a detailed experimental study of an alternative growth method of α -tantalum on silicon, which is achieved at room temperature through the use of a niobium seed layer. Despite a substantially higher density of oxygen-rich grain boundaries in the films sputtered at room temperature, resonators made from these films are found to have state-of-the-art quality factors, comparable to resonators fabricated from tantalum grown at high temperature. This finding challenges previous assumptions about correlations between material properties and microwave loss of superconducting thin films, and opens a new avenue for the integration of tantalum into fabrication flows with limited thermal budget.
Superconducting coplanar waveguide resonators are essential components in quantum processors, where their internal quality factor (Qi) constrains qubit coherence and readout fidelity. In niobium devices, microwave losses at millikelvin temperatures are strongly influenced by two-level systems (TLS) associated with the complex NbOx surface oxide. To mitigate these losses, we investigate a surface-engineering approach in which Nb films are capped in situ with a thin tantalum layer to suppress Nb2O5 formation and replace the native NbOx interface with a Ta-based oxide. We fabricate Nb/Ta bilayer and reference Nb resonators on high-resistivity silicon using identical DC sputtering and wet etching conditions, and characterize their performance at millikelvin temperatures. Fresh Ta-encapsulated devices exhibit internal quality factors up to 2.4 x 10^6 in the near-single-photon regime, with power dependence consistent with reduced TLS-related loss at the metal-air interface. A control Nb device fabricated under the same process shows comparatively lower Q_TLS, consistent with the beneficial effect of the Ta capping layer. Furthermore, ageing tests performed on Nb/Ta resonators after six months reveal a moderate reduction in Q_TLS relative to their initial values, yet the performance remains superior to newly fabricated Nb-only devices. These results suggest that thin Ta encapsulation enhances interface quality and contributes to improved temporal stability while remaining compatible with Nb-based fabrication workflows.
Abstract Tantalum (Ta) has recently received considerable attention in manufacturing robust superconducting quantum circuits. Ta offers low microwave loss, high kinetic inductance compared to aluminium (Al) and niobium (Nb), and good compatibility with complementary metal-oxide-semiconductor (CMOS) technology, which is essential for quantum computing applications. Here we demonstrate the fabrication engineering of thickness-dependent high-quality-factor (high-  Qi\:{Q}_{i}Qi​ ) Ta superconducting microwave coplanar waveguide resonators. All films are deposited on high-resistivity silicon substrates at room temperature without additional substrate heating. Before Ta deposition, a niobium (Nb) seed layer is used to promote a body-centred cubic lattice (  α \:\alpha\:α -Ta) formation. We further engineer the kinetic inductance (  LK\:{L}_{K}LK​ ) of the resonators by varying Ta film thicknesses. High  LK\:{L}_{K}LK​ is a key advantage for applications because it facilitates the realisation of high-impedance, compact quantum circuits with enhanced coupling to qubits. The maximum internal quality factor  Qi\:{Q}_{i}Qi​ of  ∼ \:\sim\:∼ 3.6 × 10 6 in the high power regime and  Qi\:{Q}_{i}Qi​ of  ∼ \:\sim\:∼ 4.5 × 10 5 in the single-photon regime is achieved for 100 nm Ta which represents an improvement over previous room-temperature deposited Ta resonators on silicon substrates in the single photon regime, while the highest kinetic inductance of 0.6 pH/sq is obtained for the thinnest film, which is 40 nm. This combination of high  Qi\:{Q}_{i}Qi​ and high  LK\:{L}_{K}LK​ highlights the potential of Ta microwave circuits for high-fidelity operation of compact quantum circuits.
Abstract Tantalum (Ta) is a promising material for superconducting qubits due to its stable chemical properties, formation of a single oxide, and resistance to reaction with other substances. However, achieving the desired α -Ta typically requires high-temperature substrate heating, leading to a time-consuming process and stringent requirements for the film deposition system. Here we demonstrate the deposition of high-quality α -Ta at room temperature using a niobium (Nb) film as a buffer layer. The buffered films are characterized using x-ray diffraction, transmission electron microscopy, and scanning electron microscopy. Transmons with capacitors, transmission lines, and readout resonators fabricated with such Nb-buffered Ta exhibit excellent performance. We observed an “inflection point” in the dependence of the Q i of the resonators on the input microwave photons, which can be fitted well with an expression for the superposition of the buffered resonators. These experimental results show that the buffered films deposited at room temperature have promising applications in superconducting devices.