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arXiv:2502.07043 · Nature Communications

Operation of a high-frequency, phase-slip qubit

Cheeranjeev Purmessur, Edmond K. C. Chow, Bernard van Heck, Angela Kou

Published Dec 12, 2025• 2 citations
arXivHTMLPDF

Abstract

Aluminum-based Josephson junctions are currently the main sources of nonlinearity for control and manipulation of superconducting qubits. A constriction-based junction provides an alternative source of nonlinearity that promises new types of protected qubits and the possibility of high-temperature and high-frequency operation through the use of superconductors with larger energy gaps. Junctions made from such superconductors have been challenging to incorporate into superconducting qubits because of difficulty controlling junction parameters and have had extremely low lifetimes, which limited their utility. Here we demonstrate that junctions made using titanium nitride (TiN) are a promising and controllable qubit platform. We use TiN junctions to build superconducting qubits based on quantum phase slips through the junction. We operate the qubit at zero flux where the qubit frequency ( ~ 17GHz) is mainly determined by the inductance of the qubit. We perform readout and coherent control of the superconducting qubit, and measure qubit lifetimes >60μs. Finally, we demonstrate operation of the qubit at temperatures exceeding 300 mK. Our results add the TiN-based junction as a tool for superconducting quantum information processing and opens avenues for new classes of superconducting qubits. Superconducting constrictions are an alternative source of nonlinearity to Al-based Josephson junctions, enabling new functionalities for qubits. Here, the authors demonstrate a high-frequency superconducting qubit in a single TiN thin film, based on coherent quantum phase slip tunneling through a constriction.

DOI
10.1038/s41467-025-66348-w

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Aluminum-based Josephson junctions are currently the main sources of nonlinearity for control and manipulation of superconducting qubits. A constriction-based junction provides an alternative source of nonlinearity that promises new types of protected qubits and the possibility of high-temperature and high-frequency operation through the use of superconductors with larger energy gaps. Junctions made from such superconductors have been challenging to incorporate into superconducting qubits because of difficulty controlling junction parameters and have had extremely low lifetimes, which limited their utility. Here we demonstrate that junctions made using titanium nitride (TiN) are a promising and controllable qubit platform. We use TiN junctions to build superconducting qubits based on quantum phase slips through the junction. We operate the qubit at zero flux where the qubit frequency ( ~ 17GHz) is mainly determined by the inductance of the qubit. We perform readout and coherent control of the superconducting qubit, and measure qubit lifetimes >60μs. Finally, we demonstrate operation of the qubit at temperatures exceeding 300 mK. Our results add the TiN-based junction as a tool for superconducting quantum information processing and opens avenues for new classes of superconducting qubits. Superconducting constrictions are an alternative source of nonlinearity to Al-based Josephson junctions, enabling new functionalities for qubits. Here, the authors demonstrate a high-frequency superconducting qubit in a single TiN thin film, based on coherent quantum phase slip tunneling through a constriction.
This paper presents the fabrication and characterization of superconducting qubit components from titanium nitride (TiN) and aluminum nitride (AlN) layers to create Josephson junctions and superconducting resonators in an all-nitride architecture. Our methodology comprises a complete process flow for the fabrication of TiN/AlN/TiN junctions, characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), ellipsometry and DC electrical measurements. We evaluated the sputtering rates of AlN under varied conditions, the critical temperatures of TiN thin films for different sputtering environments, and the internal quality factors of TiN resonators in the few-GHz regime, fabricated from these films. Overall, this offered insights into the material properties critical to qubit performance. Measurements of the dependence of the critical current of the TiNIIIAlNIIITiN junctions yielded values ranging from 150μA\mu \mathbf{A}μAto 2μA\mu \mathbf{A}μA, for AlN barrier thicknesses up to ca. 5 nm, respectively. Our findings demonstrate advances in the fabrication of nitride-based superconducting qubit components, which may find applications in quantum computing technologies based on novel materials.
Abstract Superconducting qubits are a promising quantum computing platform, but significant challenges remain, such as achieving sufficiently long and stable coherence times and precise control of circuit parameters. Further improvements in material processing are essential to overcome these challenges. This paper introduces our research on superconducting quantum circuit technology based on nitride superconductors, where the core technologies are epitaxial growth of titanium nitride (TiN) on silicon (Si) substrates and epitaxial Josephson junctions using niobium nitride (NbN), aluminum nitride (AlN), and magnesium oxide (MgO). We have established a fabrication process of NbN/AlN/NbN epitaxial junctions on Si (100) substrates using a TiN film as a buffer layer and are working on applying this process to superconducting qubits. We describe recent results on the effect of junction annealing and discuss the advantages and potential of epitaxial Josephson junctions for realizing large-scale superconducting quantum circuits.
Superconducting qubits are among the most promising platforms for realizing practical quantum computers. One requirement to create a quantum processor is nonlinearity, which in superconducting circuits is typically achieved by sandwiching a layer of aluminum oxide between two aluminum electrodes to form a Josephson junction. These junctions, however, face several limitations that hinder their scalability: the small superconducting gap of aluminum necessitates millikelvin operating temperatures, the material interfaces lead to dissipation, and the sandwich geometry adds unwelcome capacitance for high-frequency applications. In this work, we address all three limitations using a novel superconducting weak link based on the superconductor-insulator transition. By locally thinning a single film of niobium nitride, we exploit its thickness-driven superconductor-insulator transition to form a weak link employing only atomic layer deposition and atomic layer etching. We utilize our weak links to produce a transmon qubit, 'planaronplanaronplanaron', with a measured anharmonicity of α/2π=235α/2π= 235α/2π=235 MHz; at present, the linewidth is κ/2π=15 MHzκ/2π= 15 \mathrm{\: MHz}κ/2π=15MHz. The high superconducting gap of niobium nitride can enable operation at elevated temperatures in future devices, and the fully planar geometry of the weak link eliminates superfluous material interfaces and capacitances. The investigation of small patches of material near the SIT can shed new light on the nature of the transition, including the role of dissipation and finite-size effects.
We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ∼60 μs, by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to qubits made with lift-off aluminum deposited simultaneously with the Josephson junction, this represents as much as a six-fold improvement and provides evidence that surface losses from two-level system (TLS) defects residing at or near interfaces contribute to decoherence. Concurrently, we observe an anomalous temperature dependent frequency shift of TiN resonators, which is inconsistent with the predicted TLS model.
We developed a process for fabricating nitride superconductor-based superconducting qubits monolithically integrated with a single flux quantum (SFQ)-based readout and control circuits. Since we used a Josephson junction (JJ) made of an NbN/AlN/NbN tri-layer, including a critical current density (Jc) of 50 A/cm2as the suitable material for superconducting qubits and SFQ readout/control circuits operating at 20 mK, the JJs for both the qubits and the SFQ circuits could simultaneously be fabricated. The device structure was also composed of three superconductive layers, comprising two superconductive layers as wiring layers and other layers as the top ground plane. Then, we used a Pd film as the resistive layer, which is required as the shunt resistors and the bias resistors for the SFQ control circuits, followed by an investigation of the properties of NbN/AlN/NbN epitaxial junctions and evaluation of the sheet inductance of the base NbN and wiring NbTiN layer. Our results showed the successful fabrication of a JJ with a sufficiently low leakage current and aJcof around 50 A/cm2, which was close to the target value. Furthermore, the evaluated sheet inductance exceeded 1 pH, which was several times larger than the values obtained for Nb-integrated circuits.
Abstract Improving the coherence of superconducting qubits is a fundamental step towards the realization of fault-tolerant quantum computation. However, coherence times of quantum circuits made from conventional aluminum-based Josephson junctions are limited by the presence of microscopic two-level systems in the amorphous aluminum oxide tunnel barriers. Here, we have developed superconducting qubits based on NbN/AlN/NbN epitaxial Josephson junctions on silicon substrates which promise to overcome the drawbacks of qubits based on Al/AlOx/Al junctions. The all-nitride qubits have great advantages such as chemical stability against oxidation, resulting in fewer two-level fluctuators, feasibility for epitaxial tunnel barriers that reduce energy relaxation and dephasing, and a larger superconducting gap of ~5.2 meV for NbN, compared to ~0.3 meV for aluminum, which suppresses the excitation of quasiparticles. By replacing conventional MgO by a silicon substrate with a TiN buffer layer for epitaxial growth of nitride junctions, we demonstrate a qubit energy relaxation time $${T}_{1}=16.3\;{{\upmu }}{{{{{\rm{s}}}}}}$$ T 1 = 16.3 μ s and a spin-echo dephasing time $${T}_{2}=21.5\;{{\upmu }}{{{{{\rm{s}}}}}}$$ T 2 = 21.5 μ s . These significant improvements in quantum coherence are explained by the reduced dielectric loss compared to the previously reported $${T}_{1}\approx {T}_{2}\approx 0.5\;{{\upmu }}{{{{{\rm{s}}}}}}$$ T 1 ≈ T 2 ≈ 0.5 μ s of NbN-based qubits on MgO substrates. These results are an important step towards constructing a new platform for superconducting quantum hardware.