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arXiv:2309.14559 · Low Temperature Physics

Design of deeply cooled ultra-low dissipation amplifier and measuring cell for quantum measurements with a microwave single-photon counter

Oleg G. Turutanov, A. M. Korolev, V. I. Shnyrkov, Andrii P. Shapovalov, Martin Baránek, Samuel Kern, V. Yu. Lyakhno, P. Neilinger, M. Grajcar

Published Jan 1, 2024• 2 citations
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Abstract

The requirements and details of designing a measuring cell and low-back-action deeply-cooled amplifier for quantum measurements at 10 mK are discussed. This equipment is a part of a microwave single-photon counter based on a superconducting flux qubit. The high-electron mobility transistors (HEMTs) in the amplifier operate in unsaturated microcurrent regime and dissipate only 1 μW of dc power per transistor. Simulated amplifier gain is 15 dB at 450 MHz with a high-impedance (≈ 5 kΩ) signal source and standard 50-Ω output.

DOI
10.1063/10.0023896

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The requirements and details of designing a measuring cell and low-back-action deeply-cooled amplifier for quantum measurements at 10 mK are discussed. This equipment is a part of a microwave single-photon counter based on a superconducting flux qubit. The high-electron mobility transistors (HEMTs) in the amplifier operate in unsaturated microcurrent regime and dissipate only 1 μW of dc power per transistor. Simulated amplifier gain is 15 dB at 450 MHz with a high-impedance (≈ 5 kΩ) signal source and standard 50-Ω output.
Abstract An analysis of the measurement of the magnetic flux in superconducting qubits based on RF SQUIDs was carried out with an 800 MHz bandwidth low-power-consumption cryogenic high-electron-mobility transistor amplifier. The preliminary experimental results obtained at temperatures 2 K and 4 K for RF SQUIDs in hysteretic, and in two non-hysteretic, regimes with a pump frequency of about 30 MHz are discussed. Parameters of RF SQUIDs in the hysteretic and non-hysteretic modes are analyzed within the framework of the resistively and capacitively shunted junction model for Josephson junctions. Its sensitivity at a temperature of 30 mK and frequency band (speed) are calculated and optimized to read the states of a flux qubit used as a single microwave photon counter. It is shown that an RF SQUID, operated in an adiabatic non-hysteretic mode for qubit readout, allows us to minimize its back-action effect and the dark count rate. This is due to the absence of Josephson generation, the small amplitude of the resonator electromagnetic field, and the selection of the pump frequency that does not coincide with the characteristic frequencies of the flux qubit.
A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.
Single-photon detectors are crucial elements of prospective quantum devices and techniques such as quantum communication systems, quantum computers, quantum radars, astrophysical detectors, etc. The detection of individual photons in microwave range is a much larger challenge as compared to that of in optics due to the quanta energy difference of 4 to 5 orders of magnitude which requires a quite different approach. So "artificial atoms" with discrete energy spectrum such as superconducting qubits are used here exploiting resonance transitions between their quantum states. A scheme incorporating a flux qubit with controllable spectrum as a single photon counter for 3-12 GHz range and weak continuous readout circuit based on rf superconducting quantum interferometer (SQUID) with UHF pumping is proposed and analyzed. High SQUID pumping frequency (about 500 MHz) along with using cooled microwatt HEMT preamplifier provides the measurement frequency band of up to 30 MHz while substantially diminishing the back-action effect.
A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude–frequency response of the “supercon-ducting qubit–coplanar cavity” structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.
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