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arXiv:2308.09995 · Communications Physics

Demonstration of a Josephson vortex-based memory cell with microwave energy-efficient readout

Dmitrii S. Kalashnikov, Vsevolod I. Ruzhickiy, Andrey G. Shishkin, Igor A. Golovchanskiy, M. Yu. Kupriyanov, Igor I. Soloviev, Dimitri Roditchev, Vasily S. Stolyarov

Published Mar 11, 2024• 13 citations
arXivHTMLPDF

Abstract

Abstract The ongoing progress of superconducting logic systems with Josephson junctions as base elements requires the development of compatible cryogenic memory. Long enough junctions subject to magnetic field host quantum phase 2 π -singularities—Josephson vortices. Here, we report the realization of the superconducting memory cell whose state is encoded by the number of present Josephson vortices. By integrating the junction into a coplanar resonator and by applying a microwave excitation well below the critical current, we are able to control the state of the system in an energy-efficient and non-destructive manner. The memory effect arises due to the presence of the natural edge barrier for Josephson vortices. The performance of the device is evaluated, and the routes for creating scalable cryogenic memories directly compatible with superconducting microwave technologies are discussed.

DOI
10.1038/s42005-024-01570-4

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Abstract The ongoing progress of superconducting logic systems with Josephson junctions as base elements requires the development of compatible cryogenic memory. Long enough junctions subject to magnetic field host quantum phase 2 π -singularities—Josephson vortices. Here, we report the realization of the superconducting memory cell whose state is encoded by the number of present Josephson vortices. By integrating the junction into a coplanar resonator and by applying a microwave excitation well below the critical current, we are able to control the state of the system in an energy-efficient and non-destructive manner. The memory effect arises due to the presence of the natural edge barrier for Josephson vortices. The performance of the device is evaluated, and the routes for creating scalable cryogenic memories directly compatible with superconducting microwave technologies are discussed.
Abstract Superconducting computing promises enhanced computational power in both classical and quantum approaches. Yet, efficient schemes for scalable and fast superconducting memories are still missing. On the one hand, the large inductance required in magnetic flux-controlled Josephson memories impedes device miniaturization and scalability. On the other hand, schemes based on the ferromagnetic order to store information often degrades superconductivity, and limits the operation speed to the magnetization switching rate of a few GHz. Here, we overcome these limitations with a fully superconducting memory cell based on the hysteretic phase-slip transition existing in long aluminum nanowire Josephson junctions. The memory logic state is codified in the topological index of the junction providing a robust protection against stocastic phase slips and magnetic flux noise. Our direct and non-destructive read-out schemes, based on local DC or AC tunneling spectroscopy, ensure reduced dissipation (≤ 40 fW) thereby yielding a very low energy per bit read-out power consumption as low as ~ 10-24 J as estimated from the typical time response of the structure (≤ 30 ps). The memory, measured over several days, showed no evidence of information degradation up to ~1.1 K, i.e., ~85% of the critical temperature of aluminum. The ease of operation combined with remarkable performance elects the Josephson phase-slip memory as an attractive storage cell to be exploited in advanced superconducting classical logic architectures or flux qubits.
We investigate a Magnetic Josephson Junction (MJJ) - a superconducting device with ferromagnetic barrier for a scalable high-density cryogenic memory compatible with energy-efficient single flux quantum (SFQ) circuits. The superconductor-insulator-superconductor-ferromagnet-superconductor (SIS'FS) MJJs are analyzed both experimentally and theoretically. We found that the properties of SIS'FS junctions fall into two distinct classes based on the thickness of S'layer. We fabricate Nb-Al/AlOx-Nb-PdFe-Nb SIS'FS MJJs using a co-processing approach with a combination of HYPRES and ISSP fabrication processes. The resultant SIS'FS structure with thin superconducting S'-layer is substantially affected by the ferromagnetic layer as a whole. We fabricate these type of junctions to reach the device compatibility with conventional SIS junctions used for superconducting SFQ electronics to ensure a seamless integration of MJJ-based circuits and SIS JJ-based ultra-fast digital SFQ circuits. We report experimental results for MJJs, demonstrating their applicability for superconducting memory and digital circuits. These MJJs exhibitIcRnproduct only ~ 30% lower than that of conventional SIS junctions co-produced in the same fabrication. Analytical calculations for these SIS'FS structures are in a good agreement with the experiment. We discuss application of MJJ devices for memory and programmable logic circuits.
Abstract Storage of a single magnetic flux quantum in a superconducting loop containing a Josephson junction represents a promising unit cell configuration for construction of a cryogenic memory of superconducting digital circuits. However, application of a DC bias current is required for operation of such a memory cell to maintain trapping of the flux quantum in the storage loop. In this work, we present a superconducting memory cell that uses a superconducting-magnetic π junction. The cell characteristics show flux quantum hysteresis centering at the zero-bias current. We develop a fabrication process that combines superconductor–ferromagnet–superconductor (SFS) junctions with superconductor–normal metal–superconductor (SNS) junctions. The critical current density of the SFS junctions shows a 0–π oscillation as a function of the ferromagnetic layer thickness. The formation of the π junction is confirmed further by the flux modulation curves of a superconducting quantum interference device made from SNS junctions with an additional SFS junction.
The quantum behavior of Josephson junctions is often exploited to produce superconducting devices of outstanding performance. With respect to information technology applications, Josephson junctions can be used in circuits that perform logic operations in picoseconds, which may result in energy-efficient, high-performance cryogenic computers, provided that memory elements can be developed that can be switched between two stable states by integrated superconducting logic circuits. Here, we show that Josephson junctions based on pseudo-spin-valve barriers could enable such memory elements, by unambiguously differentiating the controlled changes in Josephson coupling from size-dependent remanent-field effects. These changes can be very large and even reversed in magnitude, which is strong evidence of the exchange-field effect on the Cooper pair phase. These devices are the first that demonstrate nonvolatile, size-independent switching of the Josephson coupling in magnitude or phase, and they may allow for the first scalable superconducting memory devices.
The lack of dense, fast, energy efficient memory has been the main detractor for multiple superconducting digital projects in the past. Recently, fundamental physics research in superconductor-ferromagnet thin-film tunnel structures created a new opportunity to solve this long-standing problem. Superconductivity and ferromagnetism, two deeply antagonistic electronic properties, can co-exist in form of Magnetic Josephson Junctions (MJJs). The superconducting-ferromagnetic MJJs are electrically compatible with traditional superconductor-insulator-superconductor (SIS) Josephson junctions (JJs) used for digital energy-efficient single flux quantum (eSFQ/ERSFQ) circuits. Both MJJ and JJ circuits have similar fabrication process and can be integrated on a single chip. As a result, a combination of MJJs and JJs can be used to form addressable memory cells, energy-efficient memory periphery circuits and programmable logic elements. In this paper, we present the test results of superconductor-insulator-ferromagnet-superconductor (SIFS) MJJs showing their applicability for superconducting spintronic memory and digital circuits.
We develop a fast magnetic Josephson junction (MJJ)—a superconducting ferromagnetic device for a scalable high-density cryogenic memory compatible in speed and fabrication with energy-efficient single flux quantum (SFQ) circuits. We present experimental results for superconductor-insulator-ferromagnet-superconductor (SIFS) MJJs with high characteristic voltage IcRn of >700 μV proving their applicability for superconducting circuits. By applying magnetic field pulses, the device can be switched between MJJ logic states. The MJJ IcRn product is only ∼30% lower than that of conventional junction co-produced in the same process, allowing for integration of MJJ-based and SIS-based ultra-fast digital SFQ circuits operating at tens of gigahertz.