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arXiv:2305.01872

Microwave loss characterization using multi-mode superconducting resonators

Chan U Lei, Suhas Ganjam, Lev Krayzman, Archan Banerjee, Kim Kisslinger, Sooyeon Hwang, Luigi Frunzio, Robert J. Schoelkopf

Published May 3, 2023• 0 citations
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Abstract

Measuring the losses arising from different materials and interfaces is crucial to improving the coherence of superconducting quantum circuits. Although this has been of interest for a long time, current studies can either only provide bounds to those losses, or require several devices for a complete characterization. In this work, we introduce a method to measure the microwave losses of materials and interfaces with a single multi-mode superconducting resonator. We demonstrate a formalism for analyzing the loss sensitivity of multi-mode systems and discuss the design strategies of multi-mode resonators for material loss studies. We present two types of multi-mode superconducting resonators for the study of bulk superconductors: the forky whispering-gallery-mode resonator (FWGMR) and the ellipsoidal cavity. We use these resonators to measure the surface dielectric, conductor, and seam losses of high-purity (5N5) aluminum and aluminum alloy (6061), as well as how they are affected by chemical etching, diamond turning, and thin-film coating. We find that chemical etching and diamond turning reduce both the surface dielectric and conductive losses of high-purity aluminum, but provide no appreciable improvement to the seam. Coating the surfaces of diamond-turned aluminum alloys with e-beam evaporated or sputtered aluminum thin-films significantly reduces all three losses under study. In addition, we study the effect of chemical etching on the surface of high-purity aluminum using transmission electron microscopy (TEM) and find that the chemical etching process creates a thinner and more uniform oxide layer, consistent with the observed improvement in the surface dielectric loss.

DOI
10.48550/arxiv.2305.01872

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Measuring the losses arising from different materials and interfaces is crucial to improving the coherence of superconducting quantum circuits. Although this has been of interest for a long time, current studies can either only provide bounds to those losses, or require several devices for a complete characterization. In this work, we introduce a method to measure the microwave losses of materials and interfaces with a single multi-mode superconducting resonator. We demonstrate a formalism for analyzing the loss sensitivity of multi-mode systems and discuss the design strategies of multi-mode resonators for material loss studies. We present two types of multi-mode superconducting resonators for the study of bulk superconductors: the forky whispering-gallery-mode resonator (FWGMR) and the ellipsoidal cavity. We use these resonators to measure the surface dielectric, conductor, and seam losses of high-purity (5N5) aluminum and aluminum alloy (6061), as well as how they are affected by chemical etching, diamond turning, and thin-film coating. We find that chemical etching and diamond turning reduce both the surface dielectric and conductive losses of high-purity aluminum, but provide no appreciable improvement to the seam. Coating the surfaces of diamond-turned aluminum alloys with e-beam evaporated or sputtered aluminum thin-films significantly reduces all three losses under study. In addition, we study the effect of chemical etching on the surface of high-purity aluminum using transmission electron microscopy (TEM) and find that the chemical etching process creates a thinner and more uniform oxide layer, consistent with the observed improvement in the surface dielectric loss.
Understanding the loss mechanisms in materials is crucial to improving coherence in superconducting quantum circuits. The authors present a technique based on multimode superconducting resonators that distinguishes and quantifies all loss channels in relevant materials. Applying this technique reveals that both chemical etching and diamond turning reduce surface losses in high-purity aluminum, while coating diamond-turned surfaces with thin-film aluminum significantly improves joint quality. This method can be used to design on-chip superconducting devices to characterize microwave losses, as well as to quantify the effects of fabrication processes.
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Superconducting quantum devices have gained increasing interest over the past 15 years because of their role as promising candidates for implementing a large-scale quantum computer and as ultra-sensitive detectors. Superconducting resonators are one type of superconducting device which are used in a variety of applications including quantum computing and radioastronomy. They can achieve large quality factors which are important for these applications and a variety of others. Specific examples of these applications include the readout and coupling of superconducting qubits and also microwave kinetic inductance detector arrays for sub-mm wavelength astronomical measurements. High quality factors also enable the study of very subtle features in the electromagnetic response of the resonator. This feature in turn offers provides a method to characterize loss mechanisms which affect the performance of superconducting qubits, by measuring the quality factor of a resonator. Dielectric loss is an example of such a loss mechanism, and is considered to be one of, if not \\it the \\rm major obstacle to overcome in order to construct scalable quantum technologies based on superconducting devices. This type of loss arises from the coupling of the electric field in the device to spurious degrees of freedom which arise naturally the dielectric environment of the device. The fast-growing interest in the physics and applications of superconducting resonators has renewed interest in an improving our fundamental understanding of dielectric loss. This interest involves the study of a much bigger and older question in condensed matter physics; namely, what is the microscopic physics which governs the behaviour and of an amorphous material at low-temperatures? \n \nIn this thesis, we present a systematic study of dielectric loss in amorphous aluminum oxide using superconducting microwave resonators. Measurements of the intrinsic loss tangent over a large temperature range of 40~mK to 1~K are presented and analyzed in detail. Some aspects of the data are well understood in terms of the standard tunnelling two-level system model, while others require a deeper analysis of the electrodynamics of the resonator and insights from more advanced theories. We employ a consistent approach using numerical simulations of the resonator to understand loss mechanisms arising from both an inhomogeneous electric field and multiple dielectric layers. We measure saturation effects which provide insight into coherent properties of two-level system ensembles and the mutual interaction between them. Excellent agreement with the two-level system model is found for intrinsic losses, however the strong dependence on temperature which we observe for saturation effects is not predicted in the standard form of the model. We find that this dependence can be understood in terms of the theory of spectral diffusion which is consistent with a strong mutual interaction between two-level systems contributes to broadening of their spectral linewidths.
Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing material losses are crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in a vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level state are the dominant loss mechanism at low photon number and temperature, with a loss tangent due to native indium oxide of ∼5×10−5. The molecular beam epitaxial films show evidence of the formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.
Material losses in superconducting circuits fundamentally limit qubit coherence times and resonator quality factors. Most research efforts focus on mitigating losses at circuit interfaces, including metal--substrate, substrate--air, and metal--air interfaces. However, the correlation between TLS and non-TLS losses with the intrinsic properties of the superconducting metal and the dielectric edge smoothness is not well studied. In this work, we link the aluminum film grain size to non-TLS losses and the dielectric trimming profile and roughness to TLS loss; both loss mechanisms are subsequently mitigated. To reduce metal-related losses, we engineer the aluminum microstructure by heating during deposition, increasing grain size and reducing grain boundary density. Beyond mitigating metal losses, we introduce a two-step etching technique, Tropic etching, to suppress dielectric TLS loss by producing an ultra-smooth silicon surface with minimal defects and redeposition. These results lay out the fabrication pathway for aluminum resonators with lower loss, demonstrating two-orders-of-magnitude improvement in quality factor from 6×1046\times10^{4}6×104 to 2.3×1062.3\times10^{6}2.3×106. Since aluminum is the basis for most high-coherence Josephson junctions and dielectric edges are inherent to all common device geometries, the improvements in aluminum microstructure and edge profiling, presented here, can enhance the performance of superconducting quantum devices.
We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors (Qi) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconducting qubits. By systematically varying several fabrication steps, we identify the relative importance of reducing loss at the substrate–metal and substrate–air interfaces. We find that it is essential to clean the silicon substrate in hydrogen fluoride (HF) prior to aluminum deposition. A post-fabrication removal of the oxides on the surface of the silicon substrate and the aluminum film by immersion in HF further improves the Qi. We observe a small, but noticeable, adverse effect on the loss by omitting either standard cleaning (SC1), pre-deposition heating of the substrate to 300 °C, or in situ post-deposition oxidation of the film’s top surface. We find no improvement due to excessive pumping meant to reach a background pressure below 6 × 10−8 mbar. We correlate the measured loss with microscopic properties of the substrate–metal interface through characterization with x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, transmission electron microscopy, energy-dispersive x-ray spectroscopy, and atomic force microscopy.