Metallic states near the Mott insulator show a variety of quantum phases, including various magnetic, charge-ordered states and high-temperature superconductivity in various transition metal oxides and organic solids. The emergence of a variety of phases and their competitions are likely intimately associated with quantum transitions between the electron-correlation-driven Mott insulator and metals characterized by its criticality, and is related to many central questions of condensed matter. The quantum criticality is, however, not well understood when the transition is controlled by the bandwidth through physical parameters such as pressure. Here, we quantitatively estimate the universality class of the transition characterized by a comprehensive set of critical exponents by using a variational Monte Carlo method implemented as an open-source innovated quantum many-body solver, with the help of established scaling laws at a typical bandwidth-controlled Mott transition. The criticality indicates a weaker charge and density instability in contrast to the filling-controlled transition realized by carrier doping, implying a weaker instability to superconductivity as well. The present comprehensive clarification opens up a number of routes for quantitative experimental studies for complete understanding of elusive quantum Mott transition and nearby strange metal that cultivate future design of functionality.
Metallic states near the Mott insulator show a variety of quantum phases, including various magnetic, charge-ordered states and high-temperature superconductivity in various transition metal oxides and organic solids. The emergence of a variety of phases and their competitions are likely intimately associated with quantum transitions between the electron-correlation-driven Mott insulator and metals characterized by its criticality, and is related to many central questions of condensed matter. The quantum criticality is, however, not well understood when the transition is controlled by the bandwidth through physical parameters such as pressure. Here, we quantitatively estimate the universality class of the transition characterized by a comprehensive set of critical exponents by using a variational Monte Carlo method implemented as an open-source innovated quantum many-body solver, with the help of established scaling laws at a typical bandwidth-controlled Mott transition. The criticality indicates a weaker charge and density instability in contrast to the filling-controlled transition realized by carrier doping, implying a weaker instability to superconductivity as well. The present comprehensive clarification opens up a number of routes for quantitative experimental studies for complete understanding of elusive quantum Mott transition and nearby strange metal that cultivate future design of functionality.
Abstract: The metal–insulator transition (MIT) constitutes one of the most profound and persistent problems in condensed matter physics, sitting at the intersection of electronic structure theory, many-body physics, and emergent quantum phenomena. Conventional band theory, which successfully classifies materials as metals or insulators according to the filling of their electronic bands, fails dramatically when confronted with a class of compounds transition metal oxides chief among them that ought to be metallic by band-counting arguments yet are robustly insulating in the laboratory. The resolution of this paradox required abandoning the independent-electron picture entirely and recognizing that strong Coulomb repulsion between electrons can, by itself, drive localization. This insight, formalized by Mott and later distilled into the Hubbard model, established correlation-driven insulation as a phenomenon distinct from band insulation. The present paper offers a theoretical exploration of the MIT problem, tracing its conceptual development from the Mott criterion through the Hubbard Hamiltonian, the Brinkman–Rice scenario of quasiparticle mass divergence, and the watershed development of dynamical mean-field theory (DMFT), which rendered the Mott transition quantitatively tractable for the first time. We argue that the competition between the electronic bandwidth and the on-site interaction encoded in the ratio U/W provides the unifying organizing principle for the field. Building toward the modern frontier, we examine how the Mott transition connects to quantum phase transitions and quantum criticality, where zero-temperature instabilities governed by quantum rather than thermal fluctuations produce non-Fermi-liquid behavior and anomalous scaling. Case studies of vanadium oxides, rare-earth nickelates, and doped cuprates illustrate the diversity and subtlety of real correlated materials. We conclude that the MIT remains a central and unresolved problem whose continued study is increasingly entangled with the development of quantum materials and quantum technologies. Keywords: Metal–Insulator Transition; Mott Insulator; Strongly Correlated Electrons; Hubbard Model; DMFT; Quantum Criticality; Quantum Materials; Condensed Matter Physics
Introduction In this chapter we study metal–insulator transitions which occur due to correlations between the charge carriers. This quantum phase transitions results from the competition between kinetic energy and Coulomb repulsion where the latter has the tendency to localise the electrons. The simplest model which describes this competition is the one-band Hubbard model with its two energy scales, the bandwidth W and the Coulomb repulsion U between electrons of opposite spins on the same site. For a fixed density of electrons, n = 1; as the ratio U/W increases, we expect to find a zero-temperature phase transition from a metallic state to an insulator where the electrons are frozen at the lattice sites. The method employed here to investigate this transition is the Gutzwiller approach (Gutzwiller, 1965). This is a variational method which played an important role in providing a framework for the ideas of Mott on the problem of the metal–insulator transition (Mott, 1974). On the metallic side of the transition, this approach describes a metal with renormalised Fermi liquid parameters, essentially with enhanced effective mass and uniform susceptibility. This is the so-called highly correlated electron gas (Brinkman and Rice, 1970) for which the metal oxide V 2 O 3 is the prototype system. In the insulating side, Gutzwiller's approximation yields a noninteracting system of localised electrons. This insulating phase is incompressible , i.e. has zero compressibility and infinite zero temperature susceptibility. The latter is not a consequence of interactions but simply due to the divergence of the Curie susceptibility, χ ∝ 1 /T , of non-interacting moments at T = 0. Then, in Gutzwiller's approach the transition is from a paramagnetic metal to a paramagnetic insulator. We will continue using the designation Mott transition to describe this type of phase transition where the insulating phase has no long-range magnetic order. In real systems, most frequently, localisation due to interactions is accompanied by the appearance of antiferromagnetic order.
Abstract We present a T = 0 K renormalization group (RG) phase diagram for the hole-doped 2D Hubbard model on the square lattice. The RG method employed is nonperturbative in treating quantum fluctuations of the single-particle occupation number via the unitarily decoupling of one electronic state at every RG step. As a result, the RG phase diagram possesses the quantum fluctuation energy scale (ω) as one of its axes. Using effective Hamiltonians and wavefunctions for the low-energy many-body eigenstates for the doped Mott liquid obtained from the stable fixed point of the RG flows, we demonstrate the collapse of the pseudogap for charge excitations (Mottness) at a quantum critical point (QCP) possessing a nodal non-Fermi liquid with superconducting fluctuations, and spin-pseudogapping near the antinodes. The QCP is characterised using both thermodynamic and quantum information-theoretic measures. d-wave superconducting order is shown to arise from this quantum critical state of matter. The pseudogap phase possesses a variety of fluctuations that lead to several symmetry-broken phases at low-energies. Benchmarking of the ground state energy per particle and the double-occupancy fraction obtained from a finite-size scaling analysis against existing numerical results yields excellent agreement. We present detailed insight into the T = 0 origin of several experimentally observed findings in the cuprates, including Homes law and Planckian dissipation. We also establish that the heirarchy of temperature scales for the pseudogap (T PG), onset temperature for pairing (T ons), formation of the Mott liquid (T ML) and superconductivity (T C) obtained from our analysis is quantitatively consistent with that observed experimentally for some members of the cuprates. Our results offer insight on the ubiquitous origin of superconductivity in doped Mott insulating states, and pave the way towards a systematic search for higher superconducting transition temperatures in such systems.
Conductivity and Charge Stiffness In this chapter, we will consider initially metal–insulator (MI) transitions which occur in pure systems without disorder. In the final section we consider a superfluid–insulator transition induced by some special type of disorder. We will show that the quantities which characterise the phase transitions in both problems obey similar scaling laws and are governed by similar exponents. Differently from the magnetic transitions treated before metal–insulator (MI) transitions have no obvious order parameter to distinguish the metallic from the insulating phase. This precludes a power expansion of the free energy in terms of a small quantity as for magnetic phase transitions. In spite of that, the concepts of phase transitions and critical phenomena turn out to be very useful to describe metal–insulator transitions. In case this problem is approached using the renormalisation group, the localisation transition is associated with an unstable fixed point and the flow of the RG equations to the different attractors is sufficient to distinguish the nature of the phases. Then, in general, we can associate a set of critical exponents with the MI transitions. Besides, these exponents are not independent but obey scaling relations. Since we are concerned with zero temperature instabilities, the quantum hyperscaling law, Eq. 1.18, plays a crucial role in this problem. We will distinguish here two different types of metal–insulator transitions. Those due to a competition between parameters of the relevant Hamiltonian and metal–insulator transitions arising by varying the number of electrons or chemical potential. An example of the former is the Mott transition due to the competition between kinetic energy and the local Coulomb repulsion as described by the half-filled band Hubbard model. The latter will be referred as density-driven metal– insulator transitions in analogy with the superfluid–insulator transition in bosonic systems with varying particle number (Fisher et al ., 1989). These two types of transitions may occur in the same system or Hamiltonian. They in general belong to different universality classes and consequently have different critical exponents.
Metallic quantum states coined strange metal (SM), with robust linear-T resistivity, have been widely observed in many quantum materials under strong electron correlations, ranging from high-Tc cuprate superconductors and organic superconductors to twisted multilayer graphene and MoTe2/WSe2 superlattices. Despite decades of intensive studies, the mystery of SM still defies any sensible theoretical explanation and has been a key puzzle in modern condensed matter physics. Here, we solve a doped Mott insulator model called an Ising-Kondo lattice, which includes static spin fluctuation. With Monte Carlo simulation, the Ising-Kondo lattice unambiguously exhibits SM phenomena accompanied with quantum critical scaling in observables, e.g., resistivity, susceptibility, and specific heat. A closer look at SM reveals the breakdown of Landau's Fermi liquid theory without any symmetry breaking, i.e., the violation of Luttinger theorem. Our paper reveals that the long-overlooked static fluctuations in literature may play an essential role in non-Fermi liquid behaviors in correlated electron systems.
Over the past four decades, experimental studies of quantum phase transitions (QPTs) have been primarily focused on identifying these transitions in various materials and determining the critical exponents and universality classes associated with them. Since the critical exponents originate from the scale invariance, they are not explicitly tied to the microscopic physics of QPTs, which remains poorly understood for many systems. We have developed a model of QPTs, which addresses this deficiency. The model is based on the experimentally supported conjecture that the scaled data across a QPT depend, in a universal manner, on two system-specific length scales: the microscopic scale, L0, typically known from general considerations (e.g., mean-free path, lattice constant) and the dephasing length, ${L}_{\ensuremath{\varphi}}(T)$. Using this model, we have found that experimental data in the quantum critical regime of 18 distinct material classes can be quantitatively described by assuming that ${L}_{\ensuremath{\varphi}}(T)$ is determined by the distance traveled by system-specific excitations during the Planckian time, ${\ensuremath{\tau}}_{P}=\ensuremath{\hbar}/{k}_{B}T$. In this work, we demonstrate how the model explains microscopic physics of QPTs in doped semiconductors and amorphous alloys, materials with Ising and Heisenberg spin chains, cold boson gases in optical traps, and the Mott transitions in organic semiconductors. The dynamics of excitations is determined by parameters such as the effective mass and diffusion coefficient, D, of the corresponding noninteracting or weakly renormalized system. For doped semiconductors and amorphous alloys, the noncritical behavior of D in the quantum critical regime sharply contrasts with zero-temperature diffusion coefficient, which goes to zero at the transition. We also analyze the results of numerical studies of the Mott transition with dynamical mean-field theory, interpreting them as if they were experimental data. For these results, we find that, as expected, the microscopic scale matches the dimensionless lattice constant, ${L}_{0}\ensuremath{\sim}1$. Finally, we report that the metal-insulator transition in Si:P, Ge:Sb, and Ge:As can be explained using a noninteracting version of the model.