Abstract Virtually noiseless due to the scarcity of spinful nuclei in the lattice, simple oxides hold promise as hosts of solid-state spin qubits. However, no suitable spin defect has yet been found in these systems. Using high-throughput first-principles calculations, we predict spin defects in calcium oxide with electronic properties remarkably similar to those of the NV center in diamond. These defects are charged complexes where a dopant atom — Sb, Bi, or I — occupies the volume vacated by adjacent cation and anion vacancies. The predicted zero phonon line shows that the Bi complex emits in the telecommunication range, and the computed many-body energy levels suggest a viable optical cycle required for qubit initialization. Notably, the high-spin nucleus of each dopant strongly couples to the electron spin, leading to many controllable quantum levels and the emergence of atomic clock-like transitions that are well protected from environmental noise. Specifically, the Hanh-echo coherence time increases beyond seconds at the clock-like transition in the defect with 209Bi. Our results pave the way to designing quantum states with long coherence times in simple oxides, making them attractive platforms for quantum technologies.
Abstract Virtually noiseless due to the scarcity of spinful nuclei in the lattice, simple oxides hold promise as hosts of solid-state spin qubits. However, no suitable spin defect has yet been found in these systems. Using high-throughput first-principles calculations, we predict spin defects in calcium oxide with electronic properties remarkably similar to those of the NV center in diamond. These defects are charged complexes where a dopant atom — Sb, Bi, or I — occupies the volume vacated by adjacent cation and anion vacancies. The predicted zero phonon line shows that the Bi complex emits in the telecommunication range, and the computed many-body energy levels suggest a viable optical cycle required for qubit initialization. Notably, the high-spin nucleus of each dopant strongly couples to the electron spin, leading to many controllable quantum levels and the emergence of atomic clock-like transitions that are well protected from environmental noise. Specifically, the Hanh-echo coherence time increases beyond seconds at the clock-like transition in the defect with 209Bi. Our results pave the way to designing quantum states with long coherence times in simple oxides, making them attractive platforms for quantum technologies.
A central problem in the deployment of quantum technologies is the realization of robust architectures for quantum interconnects. We propose to engineer interconnects in semiconductors and insulators by patterning spin qubits at dislocations, thus forming quasi one-dimensional lines of entangled point defects. To gain insight into the feasibility and control of dislocation-driven interconnects, we investigate the optical cycle and coherence properties of nitrogen-vacancy (NV) centers in diamond, in proximity of dislocations, using a combination of advanced first-principles calculations. We show that one can engineer spin defects with properties similar to those of their bulk counterparts, including charge stability and a favorable optical cycle, and that NV centers close to dislocations have much improved coherence properties. Finally, we predict optically detected magnetic resonance spectra that may facilitate the experimental identification of specific defect configurations. Our results provide a theoretical foundation for the engineering of one-dimensional arrays of spin defects in the solid state.
In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing. Prominent examples are the nitrogen-vacancy (NV) center in diamond, phosphorus dopants in silicon (Si:P), rare-earth ions in solids, and V Si -centers in silicon-carbide. The Si:P system has demonstrated that its nuclear spins can yield exceedingly long spin coherence times by eliminating the electron spin of the dopant. For NV centers, however, a proper charge state for storage of nuclear spin qubit coherence has not been identified yet. Here, we identify and characterize the positively charged NV center as an electron-spin-less and optically inactive state by utilizing the nuclear spin qubit as a probe. We control the electronic charge and spin utilizing nanometer scale gate electrodes. We achieve a lengthening of the nuclear spin coherence times by a factor of 4. Surprisingly, the new charge state allows switching of the optical response of single nodes facilitating full individual addressability.
The purpose of this project was to develop quantum computing hardware suitable for implementing quantum lattice-gas algorithms, with eventual application to turbulent flow simulations. A number of quantum systems were investigated, including rare-earth dopants in oxide crystals and in II-VI semiconductors. However, in the option year it was decided to concentrate exclusively on nitrogen-vacancy (NV) color centers in diamond. Surprising, it was found that NV diamond exhibited the key elements needed to develop few-qubit room-temperature solid-state quantum processing nodes. This included the ability to optically initialize and readout the NV electron spin state, fractional millisecond lifetimes for electron spins, and few-nanosecond electron spin Rabi flops. We also demonstrated the relatively long distance (few nanometer) coupling of a single NV spin to the electron spin of a single substitutional nitrogen (N). To achieve long range optical interconnections and entanglement between nodes, cryogenic cooling will likely still be required to sufficiently narrow the optical absorption lines. To this end we located diamond samples with unusually high purity, and found NV centers in these crystals that exhibited exceptionally narrowband and stable optical lines. We also demonstrated electric field tuning of the optical transition frequency as required for controlling atom-atom and atom-cavity coupling.
Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science going back to the first spin echo experiments with silicon dopants in the 1950s. Since the turn of the century, the field has rapidly spread to a vast array of defects and host crystals applicable to quantum communication, sensing, and computing. From simple spin resonance to long-distance remote entanglement, the complexity of working with spin defects is fast advancing, and requires an in-depth understanding of their spin, optical, charge, and material properties in this modern context. This is especially critical for discovering new relevant systems dedicated to specific quantum applications. In this review, we therefore expand upon all the key components with an emphasis on the properties of defects and the host material, on engineering opportunities and other pathways for improvement. Finally, this review aims to be as defect and material agnostic as possible, with some emphasis on optical emitters, providing a broad guideline for the field of solid-state spin defects for quantum information.
Quantum decoherence induced by defects remains a major limitation for solid-state quantum technologies, yet predicting decoherence in realistic materials remains computationally challenging. Complex defect populations are often approximated as homogeneous spin baths, obscuring the role of defect-specific electronic structure and spin dynamics. Here, we develop a predictive framework for decoherence in diamond by combining first-principles electronic-structure calculations, quantum many-body spin-bath simulations, and experimental validation. The framework incorporates defect-resolved spin Hamiltonians and heterogeneous spin baths containing multiple paramagnetic defect species. Using diamond nitrogen-vacancy ensembles as a model platform, we investigate mixed nitrogen-, vacancy-, and hydrogen-related defect environments. We show that decoherence depends not only on defect density but also on defect identity and bath composition, whose distinct electronic structures, hyperfine interactions, and spin dynamics produce different coherence behavior. Heterogeneous defect populations can either suppress or enhance decoherence, producing trends unexplained by homogeneous-bath models. Magnetic-field-dependent Hahn-echo measurements on samples with different defect concentrations validate the framework. The calculations reproduce the observed coherence times and stretched-exponential decay behavior across a broad magnetic-field range and identify vacancy-related defects as critical contributors beyond the conventionally assumed P1 spin bath. By linking atomistic defect properties to quantum coherence, our framework provides a predictive route for identifying hidden defect environments and optimizing decoherence in defect-based quantum materials.
Low-dimensional complex oxides offer new opportunities for small-scale electronic devices where diverse spin, charge and orbital correlations can be suitably adapted by manipulating many-body interactions, geometries, disorder, fields, strain, etc. Therefore, oxides may be viewed as one of the promising candidates for replacing semiconductors in future devices. Maintaining coherence and control in a qubit is an important necessity for quantum computation. In this review, we discuss an example of oxide devices: decoherence-free oxide-based qubits. We present recent progress in demonstrating that long coherence times can be achieved at easily accessible temperatures in charge qubits of oxide double quantum dots. For treating strong coupling to the environment, we describe a nonperturbative approach that is useful for oxides. We illustrate ways to enhance the coherence times: increasing the electron–phonon coupling, detuning the dots to a fraction of the optical phonon energy, decreasing the temperature or reducing the adiabaticity.