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arXiv:2507.12387 · npj Computational Materials

Towards dislocation-driven quantum interconnects

Cunzhi Zhang, Victor Wen‐zhe Yu, Yu Feng Jin, Jonah Nagura, Sevim Polat Genlik, Maryam Ghazisaeidi, Giulia Galli

Published Jan 9, 2026• 7 citations
arXivHTMLPDF

Abstract

A central problem in the deployment of quantum technologies is the realization of robust architectures for quantum interconnects. We propose to engineer interconnects in semiconductors and insulators by patterning spin qubits at dislocations, thus forming quasi one-dimensional lines of entangled point defects. To gain insight into the feasibility and control of dislocation-driven interconnects, we investigate the optical cycle and coherence properties of nitrogen-vacancy (NV) centers in diamond, in proximity of dislocations, using a combination of advanced first-principles calculations. We show that one can engineer spin defects with properties similar to those of their bulk counterparts, including charge stability and a favorable optical cycle, and that NV centers close to dislocations have much improved coherence properties. Finally, we predict optically detected magnetic resonance spectra that may facilitate the experimental identification of specific defect configurations. Our results provide a theoretical foundation for the engineering of one-dimensional arrays of spin defects in the solid state.

DOI
10.1038/s41524-025-01945-3

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A central problem in the deployment of quantum technologies is the realization of robust architectures for quantum interconnects. We propose to engineer interconnects in semiconductors and insulators by patterning spin qubits at dislocations, thus forming quasi one-dimensional lines of entangled point defects. To gain insight into the feasibility and control of dislocation-driven interconnects, we investigate the optical cycle and coherence properties of nitrogen-vacancy (NV) centers in diamond, in proximity of dislocations, using a combination of advanced first-principles calculations. We show that one can engineer spin defects with properties similar to those of their bulk counterparts, including charge stability and a favorable optical cycle, and that NV centers close to dislocations have much improved coherence properties. Finally, we predict optically detected magnetic resonance spectra that may facilitate the experimental identification of specific defect configurations. Our results provide a theoretical foundation for the engineering of one-dimensional arrays of spin defects in the solid state.
Solid-state technologies for quantum mechanical application require delicate materials that can operate stably with a long coherence time. Nitrogen vacancy (NV) centers in diamond is one of the most promising candidates for quantum physics, with applications such as single photon emitters, quantum computation, and magnetic sensor.\n\nTo fully exploit the capability of defect centers in diamond for opto-electronics and quantum engineering, a number of improvements are needed. Among these are optimization of the NV centers yield in bulk diamond, nanodiamond (ND) size reduction, photocurrent study of the defect band-trap electronic structure in diamonds, and optimization of high-speed NV qubit control. For NV centers yield optimization, both the experimental magnetic sensitivity optimization as well as theoretical simulation of NV concentration are implemented. For NDs size characterization, we analyzed the size and photon autocorrelation function of NV in NDs after air oxidation treatment using a combined atomic force microscopy/confocal system. To study defect band-trap electronic structure in diamond, excitation and quenching as well as the recovery of the quenched photocurrent was investigated to better understand photocurrent dynamics in diamond. For qubit high-speed control optimization, a microwave pulse based on a nonlinear numeric solution of the Schrodinger equation is used to rotate the NV spin faster than the ordinary Rabi flip rate. Together these approaches promise to significantly speed up the development of diamond for quantum engineering applications.
This work investigates the applicability of the nitrogen-vacancy (NV) defect center in diamond for quantum computation and metrology purposes. The NV center is a molecule like defect in the diamond lattice which is optically active and possesses an electron spin in its ground state. The spin can be used as a quantum bit and as a field sensor. The NV center has three major properties enabling individual control of single defects. Its optical properties depend on the spin state, the spin can be polarized optically and the spin state has an exceptionally long lifetime. Single NV centers can be controlled by optical and microwave radiation. Generally, the research on individually controllable quantum systems is not only motivated by quantum computation and communication. With the ongoing miniaturization nowadays electronic and electro-optic devices will soon reach the limit of single quantum building blocks. While in these applications the full complexity of single quantum systems might not be needed, small sensors based on single atoms or molecules might very well take advantage of the susceptibility of quantum coherences to environmental conditions. Major challenges for all approaches towards single quantum system control are the individual addressing, the measurement of the quantum state and the protection of quantum coherence from environmental noise. Today, there is a variety of systems (including the NV center) that allow control on the single quantum level. These are for example single photons, single ions and atoms in traps, single spins in semiconductors or single molecules in solid state systems. Rather mesoscopic examples are superconducting devices, nanomechanical oscillators or surface plasmon polaritons. Regarding the NV center it has been shown that the magnetic moment of its electron spin allows individual sensing and coupling to other surrounding electron and nuclear spins. Especially single nuclear spins were shown to be exceptional quantum memories. In this work small quantum registers of up to 5 spins have been used to test major requirements for a feasible quantum processor. Therefore, mainly artificially created high purity diamond samples with controlled spin and impurity concentration were used. The NV centers were either grown in or created via ion implantation techniques in a controlled fashion. As a first requirement for quantum computation entanglement among up to three spins has been generated and was verified by quantum state tomography. This proves the access of the full Hilbert space. Especially, entanglement among nuclear spins was very long-living. In further experiments this processor was used for first quantum algorithms like super-dense coding and the Deutsch algorithm. In addition, this work demonstrates new methods to initialize nuclear spin qubits into a desired quantum state. This is particularly important as improper initialization inhibits quantum computation. One of these methods is related to dynamic nuclear spin polarization and the other to measurement based state preparation. Nuclear spins in the diamond lattice originate mainly from the C-13 isotope. By artificially altering its content the influence on the NV center spin was investigated. The coherence times of the NV center were increasing inversely with the nuclear spin density. Even increasing nuclear spin density to offer more nuclear spin qubits to an operational quantum register was possible. As an alternative route of scaling up the quantum register pairs of closely spaced NV centers were investigated. For the first time two qubit gates among two NV centers mediated by magnetic dipolar coupling have been realized. Furthermore the sensing ability was demonstrated by measuring the relative distance of the two centers (10 nm) with sub-nm precision. Eventually, this work contains new insight into the electronically excited state of the NV center which allowed a more advanced control of the electron and nuclear spins. A comparably high magnetic field was used to decouple electron and nuclear spins. Finally, this allowed quantum nondemolition measurements on single nuclear spins which manifests in the observation of quantum jumps. The new insight was used to drastically improve the performance of quantum state readout. Summarizing, it was shown that single NV centers and proximal nuclear spins form versatile small quantum registers which can be interconnected with neighboring such NV quantum registers. Although the number of qubits used in this work is still small the experimental results propose a way of how to proceed when building a quantum computer. Regarding quantum metrology, however, the use of such a small register which can sense fields and store and process the results would already outperform a single NV electron spin by orders of magnitude.
The nitrogen vacancy (NV) center in diamond, a well-studied, optically active spin defect, is the prototypical system in many state of the art quantum sensing and communication applications. In addition to the enticing properties intrinsic to the NV center, its diamond host's nuclear and electronic spin baths can be leveraged as resources for quantum information, rather than considered solely as sources of decoherence. However, current synthesis approaches result in stochastic defect spin positions, reducing the technology's potential for deterministic control and yield of NV-spin bath systems, as well as scalability and integration with other technologies. Here, we demonstrate the use of theoretical calculations of electronic central spin decoherence as an integral part of an NV-spin bath synthesis workflow, providing a path forward for the quantitative design of NV center-based quantum sensing systems. We use computationally generated coherence data to characterize the properties of single NV center qubits across relevant growth parameters to find general trends in coherence time distributions dependent on spin bath dimensionality and density. We then build a maximum likelihood estimator with our theoretical model, enabling the characterization of a test sample through NV T2* measurements. Finally, we explore the impact of dimensionality on the yield of strongly coupled electron spin systems. The methods presented herein are general and applicable to other qubit platforms that can be appropriately simulated.
Electronic spin defects in the environment of an optically active spin can be used to increase the size and hence the performance of solid-state quantum registers, especially for applications in quantum metrology and quantum communication. Previous works on multiqubit electronic spin registers in the environment of a nitrogen-vacancy (NV) center in diamond have only included spins directly coupled to the NV. As this direct coupling is limited by the central spin coherence time, it significantly restricts the maximum attainable size of the register. To address this problem, we present a scalable approach to increase the size of electronic spin registers. Our approach exploits a weakly coupled probe spin together with double-resonance control sequences to mediate the transfer of spin polarization between the central NV spin and an environmental spin that is not directly coupled to it. We experimentally realize this approach to demonstrate the detection and coherent control of an unknown electronic spin outside the coherence limit of a central NV. Our work paves the way for engineering larger quantum spin registers with the potential to advance nanoscale sensing, enable correlated noise spectroscopy for error correction, and facilitate the realization of spin-chain quantum wires for quantum communication. Published by the American Physical Society 2024
Solid-state qubits from paramagnetic point defects in solids are promising platforms to realize quantum networks and novel nanoscale sensors. Recent advances in materials engineering make it possible to create proximate qubits in solids that might interact with each other, leading to electron spin or charge fluctuation. Here we develop a method to calculate the tunneling-mediated charge diffusion between point defects from first principles and apply it to nitrogen-vacancy (NV) qubits in diamond. The calculated tunneling rates are in quantitative agreement with previous experimental data. Our results suggest that proximate neutral and negatively charged NV defect pairs can form a NV-NV molecule. A tunneling-mediated model for the source of decoherence of the near-surface NV qubits is developed based on our findings on the interacting qubits in diamond.
Dimensionality plays a central role in determining the collective behavior of interacting quantum systems. Engineering strongly interacting ensembles of solid-state spin defects in reduced dimensions remains a significant challenge at the interface between the applied and fundamental sciences. Here, we create and characterize a positionally disordered, quasi-one-dimensional spin chain in diamond, consisting of optically dark substitutional nitrogen defects (P1 centers) and optically addressable probe nitrogen-vacancy (NV) centers. Our approach exploits the preferential incorporation of nitrogen along step bunches formed during chemical vapor deposition to achieve both lateral and vertical confinement. Combining spatially resolved materials characterization with nanoscale quantum sensing, we establish the one-dimensional character of the optically dark, unpolarized P1 spin ensemble. We then use correlation spectroscopy to probe local spin autocorrelations and investigate infinite-temperature dipolar spin transport. Our results establish a materials-based route for engineering low-dimensional quantum spin systems.