Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science going back to the first spin echo experiments with silicon dopants in the 1950s. Since the turn of the century, the field has rapidly spread to a vast array of defects and host crystals applicable to quantum communication, sensing, and computing. From simple spin resonance to long-distance remote entanglement, the complexity of working with spin defects is fast advancing, and requires an in-depth understanding of their spin, optical, charge, and material properties in this modern context. This is especially critical for discovering new relevant systems dedicated to specific quantum applications. In this review, we therefore expand upon all the key components with an emphasis on the properties of defects and the host material, on engineering opportunities and other pathways for improvement. Finally, this review aims to be as defect and material agnostic as possible, with some emphasis on optical emitters, providing a broad guideline for the field of solid-state spin defects for quantum information.
Defects with associated electron and nuclear spins in solid-state materials have a long history relevant to quantum information science going back to the first spin echo experiments with silicon dopants in the 1950s. Since the turn of the century, the field has rapidly spread to a vast array of defects and host crystals applicable to quantum communication, sensing, and computing. From simple spin resonance to long-distance remote entanglement, the complexity of working with spin defects is fast advancing, and requires an in-depth understanding of their spin, optical, charge, and material properties in this modern context. This is especially critical for discovering new relevant systems dedicated to specific quantum applications. In this review, we therefore expand upon all the key components with an emphasis on the properties of defects and the host material, on engineering opportunities and other pathways for improvement. Finally, this review aims to be as defect and material agnostic as possible, with some emphasis on optical emitters, providing a broad guideline for the field of solid-state spin defects for quantum information.
Abstract Optically active point defects in wide‐bandgap crystals are leading building blocks for quantum information technologies including quantum processors, repeaters, simulators, and sensors. Although defects and impurities are ubiquitous in all materials, select defect configurations in certain materials harbor coherent electronic and nuclear quantum states that can be optically and electronically addressed in solid‐state devices, in some cases even at room temperature. Historically, the study of quantum point defects has been limited to a relatively small set of host materials and defect systems. In this article, we consider the potential for identifying defects in new materials, either to advance known applications in quantum science or to enable entirely new capabilities. We propose that, in principle, it should be possible to reverse the historical approach, which is partially based on accidental discovery, in order to design quantum defects with desired properties suitable for specific applications. We discuss the biggest obstacles on the road towards this goal, in particular those related to theoretical prediction, materials growth and processing, and experimental characterization.
Solid-state color-center spin defects provide a versatile platform for quantum sensing with applications ranging from nanoscale magnetometry to thermometry and electrometry. This review surveys recent progress in nitrogen-vacancy centers in diamond and defect spins in silicon carbide (SiC), with emphasis on their material properties, fabrication strategies, and coherence engineering. Key defect creation and optimization techniques, including ion implantation, femtosecond laser writing, focused ion beam nanofabrication, isotopic engineering, and surface passivation, are discussed in the context of improving spin coherence and optical performance. Fundamental quantum measurement protocols, optically detected magnetic resonance, Rabi oscillations, Ramsey interferometry, and spin echo, are reviewed as a hierarchical framework for characterizing spin control, dephasing, and intrinsic coherence. The review further highlights microscale sensing architectures and examines the growing role of machine learning in pulse optimization, adaptive estimation, and data-driven imaging. Finally, current challenges and future directions are outlined, focusing on scalability, environmental robustness, and autonomous operation. Together, these developments position diamond and SiC color centers as leading platforms for next-generation solid-state quantum sensors.
Large-scale quantum networks will enable entirely new applications of quantum information science in fields such as quantum communication, distributed quantum computing, sensing, and metrology. To build nodes of such networks, diamond color defects are one of the promising candidates. Their excellent optical properties, fast spin-qubit control, and long spin coherence times make them well-suited for quantum information processing and quantum memory applications. Additionally, recent advances in the heterogeneous integration of diamond nanophotonic structures with photonic integrated circuits have made these systems more efficient and well-suited for scalable quantum processor architectures. In this comprehensive review, we discuss the optical and spin properties of these systems, recent progress in the building blocks of quantum networks, and demonstrations of metropolitan-scale quantum networks, as well as the challenges associated with these systems at both the fundamental and experimental levels, along with potential solutions.
Quantum emitters serve as essential on-demand photonic resources, generating quantum states of light such as single photons and entangled photon pairs while serving as interfaces between light and matter. Buried in the solid state, quantum emitters enable a straightforward adoption of advanced nanofabrication techniques, facilitating precise engineering of their photonic environment for scalable quantum technologies. In this review, we introduce the fundamentals of quantum emitters and the key metrics characterising their performance. We highlight three material platforms: quantum dots, defect centres in diamond, and defect centres in silicon carbide. We summarise the recent developments of these platforms and discuss their advancements in quantum applications, including quantum communication, computation, and sensing. Finally, we provide a comparison across the three platforms, along with an outlook on future directions and potential challenges.
Quantum optical sensing has evolved from isolated solid state spin defect platforms to increasingly bio-integrated systems designed for biomedical applications. This review presents a perspective on this transition, spanning nitrogen vacancy centers in diamond to emerging fluorescent protein based spin qubits. Advances in diamond fabrication have enabled photonic cavities, nanomechanical resonators, and microstructured devices that enhance spin photon interactions and room temperature sensitivity. Exploration of spin defects in alternative materials further expands the sensing landscape. Parallel progress toward biological compatibility includes chip based architectures for in vitro and in vivo studies, microfluidic integration, and minimally invasive nanodiamond probes capable of intracellular nanothermometry and nanorheometry. Improvements in surface functionalization have enhanced coherence and sensing reliability in complex environments. Collectively, these advances highlight the progress and remaining challenges toward application oriented quantum sensing for the life sciences.
In search of the right diamond defect Certain defects in diamond are among the most promising physical implementations of qubits, the building blocks of quantum computers. However, identifying a defect with balanced properties is tricky: Nitrogen vacancy centers have a long lifetime but comparatively poor optical properties, whereas negatively charged silicon vacancy centers have the opposite characteristics. Rose et al. used careful materials engineering to stabilize the neutral charge state of silicon vacancy centers and found that they combine long coherence times with excellent optical properties. Science , this issue p. 60