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arXiv:1706.01555 · Science

Observation of an environmentally insensitive solid-state spin defect in diamond

Brendon C. Rose, Ding Huang, Zi-Huai Zhang, Paul Stevenson, Alexei M. Tyryshkin, Sorawis Sangtawesin, Srikanth J. Srinivasan, Lorne C. Loudin, Matthew Markham, Andrew Mark Edmonds, Daniel J. Twitchen, S. A. Lyon, Nathalie P. de Leon

Published Jul 5, 2018• 253 citations
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Abstract

In search of the right diamond defect Certain defects in diamond are among the most promising physical implementations of qubits, the building blocks of quantum computers. However, identifying a defect with balanced properties is tricky: Nitrogen vacancy centers have a long lifetime but comparatively poor optical properties, whereas negatively charged silicon vacancy centers have the opposite characteristics. Rose et al. used careful materials engineering to stabilize the neutral charge state of silicon vacancy centers and found that they combine long coherence times with excellent optical properties. Science , this issue p. 60

DOI
10.1126/science.aao0290

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In search of the right diamond defect Certain defects in diamond are among the most promising physical implementations of qubits, the building blocks of quantum computers. However, identifying a defect with balanced properties is tricky: Nitrogen vacancy centers have a long lifetime but comparatively poor optical properties, whereas negatively charged silicon vacancy centers have the opposite characteristics. Rose et al. used careful materials engineering to stabilize the neutral charge state of silicon vacancy centers and found that they combine long coherence times with excellent optical properties. Science , this issue p. 60
Quantum Information Certain defects in diamond are among the most promising physical implementations of qubits, the building blocks of quantum computers. However, identifying a defect with balanced properties is tricky: Nitrogen vacancy centers have a long lifetime but comparatively poor optical properties, whereas negatively charged silicon vacancy centers have the opposite characteristics. Rose et al. used careful materials engineering to stabilize the neutral charge state of silicon vacancy centers and found that they combine long coherence times with excellent optical properties. Science , this issue p. [60][1] [1]: /lookup/doi/10.1126/science.aao0290
The negatively charged nitrogen-vacancy defect (NV)−^-− in diamond has attracted much attention in recent years in qubit and biological applications. The negative charge is donated from nearby nitrogen donors that could limit or stem the successful application of (NV)−^-−. In this Letter, we unambiguously identify the \emph{neutral} nitrogen-vacancy defect (NV0^00) by \emph{ab initio} supercell calculations. Our analysis shows that i) the spin state can be \emph{selectively} occupied optically, ii) the electron spin state can be manipulated by time-varying magnetic field, and iii) the spin state may be read out optically. Based on this NV0^00 is a new hope for realizing qubit in diamond \emph{without} the need of nitrogen donors.
Color centers in diamond are point defects within the diamond host lattice that absorb and emit light at optical frequencies. Besides contributing to the striking visual characteristics of "fancy colored" diamonds as gemstones, the centers--particularly the negatively charged nitrogen-vacancy (NV) center and silicon-vacancy (SiV-) center--offer a number of possibilities for quantum computation and quantum information processing. In this talk, I will summarize recent progress made in characterizing negatively charged silicon-vacancy centers in diamond using the technique of optical multidimensional coherent spectroscopy (MDCS). By comparing photoluminescence-based and heterodyne-detection based signal collection schemes in a high-density SiV- center sample, we have selectively identified a population of long-lived and nonradiative silicon-vacancy centers in diamond with more than 40 times as much inhomogeneous spectral broadening as the radiative silicon-vacancy center states that are more commonly observed using photoluminescence. Estimates of the degree of inhomogeneity and overall sample characteristics indicate that strain is likely to play a large role in the formation of these nonradiative states. The findings open possibilities for being able to actively tune the degree of radiative coupling in silicon-vacancy center systems, opening possibilities for new types of quantum-optical devices.
We demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV^{0}), an S=1 defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but nonzero at below-resonant energies. We measure an ensemble spin coherence time T_{2}>100 μs at low-temperature, and a spin relaxation limit of T_{1}>25 s. Optical spin-state initialization around 946 nm allows independent initialization of SiV^{0} and NV^{-} within the same optically addressed volume, and SiV^{0} emits within the telecoms down-conversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that SiV^{0} is a promising candidate for a long-range quantum communication technology.
The negatively charged nitrogen-vacancy defect $({\text{NV}}^{\ensuremath{-}})$ in diamond has attracted much attention in recent years in qubit and biological applications. The negative charge is donated from nearby nitrogen donors that could limit or stem the successful application of ${\text{NV}}^{\ensuremath{-}}$. In this study, we identify the neutral nitrogen-vacancy defect (NV0)({\text{NV}}^{0})(NV0) by ab initio supercell calculations through the comparison of the measured and calculated hyperfine tensors of the 4A2{^{4}A}_{2}4A2​ excited state. Our analysis shows that (i) the spin state can be selectively occupied optically, (ii) the electron spin state can be manipulated by time-varying magnetic field, and (iii) the spin state may be read out optically. Based on this NV0{\text{NV}}^{0}NV0 is a hope for realizing qubit in diamond without the need of nitrogen donors. In addition, we propose that NV0{\text{NV}}^{0}NV0 may be more sensitive magnetometer than the ultrasensitive ${\text{NV}}^{\ensuremath{-}}$.
Point defects in semiconductors are becoming central to quantum technologies. They can be used as spin qubits interfacing with photons, which are fundamental for building quantum networks. Currently, the most prominent quantum defect in diamond is the nitrogen-vacancy (NV) center. However, it suffers from spectral diffusion that negatively impacts optical coherence and is due to the coupling of the emission energy with uncontrolled electric fields. The group IV vacancy complexes on the other hand have shown to be significantly more spectrally-stable as they are centrosymmetric and thus immune to the linear Stark shift. They however suffer from several issues ranging from low operation temperature to low optical efficiency due to dark states and difficulty in stabilizing the right defect charge state. Here we search for alternative to the group IV vacancy complex in diamond by systematically evaluating all possible vacancy complex using high-throughput first-principles computational screening. We identify the defects that combine centrosymmetry, emission in the visible range, as well as favorable and achievable electronic structure promoting higher operation temperature and defect levels well within the band gap. We find ZnV−2V^{-2}V−2 to be especially appealing.