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arXiv:2208.09172

Silicon edge-dot architecture for quantum computing with global control and integrated trimming

Michael A. Fogarty

Published Aug 19, 2022• 0 citations
arXivHTMLPDF

Abstract

A scalable quantum information processing architecture based on silicon metal-oxide-semiconductor technology is presented, combining quantum hardware elements from planar and 3D silicon-on-insulator technologies. This architecture is expressed in the ``unit cell'' approach, where tiling cells in two dimensions and allowing inter-cellular nearest-neighbour interactions makes the architecture compatible with the surface code for fault tolerant quantum computation. The architecture utilises global control methods, substantially reducing processor complexity with scale: Single-qubit control is achieved using globally applied spin-resonance techniques and two-qubit interactions are mediated by large quantum dots. Further, a solution to device variation is proposed through integration of electronics for individual trimming of quantum dot voltage references. Such a combined set of solutions addresses several major barriers to scaling quantum machines within completely silicon based architectures.

DOI
10.48550/arxiv.2208.09172

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Spin qubits in silicon quantum dots are one of the most promising building blocks for large scale quantum computers thanks to their high qubit density and compatibility with the existing semiconductor technologies. High fidelity single-qubit gates exceeding the threshold of error correction codes like the surface code have been demonstrated, while two-qubit gates have reached 98% fidelity and are improving rapidly. However, there are other types of error --- such as charge leakage and propagation --- that may occur in quantum dot arrays and which cannot be corrected by quantum error correction codes, making them potentially damaging even when their probability is small. We propose a surface code architecture for silicon quantum dot spin qubits that is robust against leakage errors by incorporating multi-electron mediator dots. Charge leakage in the qubit dots is transferred to the mediator dots via charge relaxation processes and then removed using charge reservoirs attached to the mediators. A stabiliser-check cycle, optimised for our hardware, then removes the correlations between the residual physical errors. Through simulations we obtain the surface code threshold for the charge leakage errors and show that in our architecture the damage due to charge leakage errors is reduced to a similar level to that of the usual depolarising gate noise. Spin leakage errors in our architecture are constrained to only ancilla qubits and can be removed during quantum error correction via reinitialisations of ancillae, which ensure the robustness of our architecture against spin leakage as well. Our use of an elongated mediator dots creates spaces throughout the quantum dot array for charge reservoirs, measuring devices and control gates, providing the scalability in the design.
The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel-posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited.