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arXiv:2112.09723 · Journal of Applied Physics

In situ detection of RF breakdown on microfabricated surface ion traps

Joshua M. Wilson, Julia Tilles, Raymond A. Haltli, Eric Ou, Matthew G. Blain, Susan Clark, Melissa Revelle

Published Apr 1, 2022• 8 citations
arXivHTMLPDF

Abstract

Microfabricated surface ion traps are a principal component of many ion-based quantum information science platforms. The operational parameters of these devices are pushed to the edge of their physical capabilities as the experiments strive for increasing performance. When the applied radio-frequency (RF) voltage is increased excessively, the devices can experience damaging electric discharge events known as RF breakdown. We introduce two novel techniques for in situ detection of RF breakdown, which we implemented while characterizing the breakdown threshold of surface ion traps produced at Sandia National Laboratories. In these traps, breakdown did not always occur immediately after increasing the RF voltage, but often minutes or even hours later. This result is surprising in the context of the suggested mechanisms for RF breakdown in vacuum. Additionally, the extent of visible damage caused by breakdown events increased with the applied voltage. To minimize the probability for damage when RF power is first applied to a device, our results strongly suggest that the voltage should be ramped up over the course of several hours and monitored for breakdown.

DOI
10.1063/5.0082740

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•Jun 11, 2012•2 citations
Microfabricated surface ion traps are a principal component of many ion-based quantum information science platforms. The operational parameters of these devices are pushed to the edge of their physical capabilities as the experiments strive for increasing performance. When the applied radio-frequency (RF) voltage is increased excessively, the devices can experience damaging electric discharge events known as RF breakdown. We introduce two novel techniques for in situ detection of RF breakdown, which we implemented while characterizing the breakdown threshold of surface ion traps produced at Sandia National Laboratories. In these traps, breakdown did not always occur immediately after increasing the RF voltage, but often minutes or even hours later. This result is surprising in the context of the suggested mechanisms for RF breakdown in vacuum. Additionally, the extent of visible damage caused by breakdown events increased with the applied voltage. To minimize the probability for damage when RF power is first applied to a device, our results strongly suggest that the voltage should be ramped up over the course of several hours and monitored for breakdown.
Trapped ions in Paul traps (radio frequency ion traps) are a promising candidate for the realization of a quantum computer. To date, experimental demonstrations of quantum computing and information processing with trapped ions have been limited to small numbers of quantum bits (qubits). The most prominent challenge to realise ion-trap quantum computation is to scale the system and control a large number of trapped ions coherently. Surface-electrode ion trap designs which are amenable to various microfabrication techniques offer a path to achieve this. In this work, design, fabrication and key operations of two types of surface-electrode ion traps, i.e. a Y-junction trap and a two-dimensional (2D) hexagonal lattice trap developed towards scaling ion-trap architectures, are presented. The steps involved in the fabrication of the ion-trap devices included photolithography, wet etch (hydrofluoric acid etch) and dry etch (deep reactive ion and inductively coupled plasma etching), and metal evaporation. The devices were fabricated on SOI substrates with different buried oxide thicknesses (i.e. 5 µm and 10 µm) and different metals for the trap electrodes (i.e. gold and aluminium). An extremely high-breakdown voltage up to 1 kV was measured in vacuum for the SOI-built test devices with a 10 µm-thick buried oxide formed by oxide film-to-oxide film bonding process. This is attributed to the deep V-shaped undercut profile of the buried oxide layer which resulted in a large breakdown path length, and so mitigating surface breakdown effects. Owing to the V-shaped undercut profile, the surface breakdown voltage was improved by 15% for the devices fabricated on SOI substrates with a 10 µm-thick buried oxide. In the first experiment, the demonstration of ytterbium (174Yb+) ion trapping in the 2D hexagonal lattice trap is achieved with a relatively long lifetime of a laser-cooled ion up to 90 minutes and ≤ 5 minutes without cooling in ultra-high vacuum system. The 2D lattice trap design allows for reliable trapping of 2D ion lattices, rudimentary shuttling between lattice sites and deterministic introducing of defects into the ion lattice. Based on all these abilities, such a 2D lattice trap with the predicted reduction of lattice spacing down to 32 µm can be configured as a versatile architecture for 2D quantum simulations with trapped ions. In the second experiment, microparticle trapping in the 2D lattice trap, performed in air, is achieved with the longest trapping lifetime of 60 minutes. Both gold and aluminium-coated electrodes also lead to comparable trapping performances. Furthermore, the in situ levitation of microparticles is successfully demonstrated at the maximum levitation height of 30 µm. This ability provides additional control on the trapping height which increases the overall functionality of the 2D lattice trap.
Over the past 15 years ion traps have demonstrated all the building blocks required of a quantum computer. Despite this success, trapping ions remains a challenging task, with the requirement for extensive laser systems and vacuum systems to perform operations on only a handful of qubits. To scale these proof of principle experiments into something that can outperform a classical computer requires an advancement in the trap technologies that will allow multiple trapping zones, junctions and utilize scalable fabrication technologies. I will discuss the construction of an ion trapping experiment, focussing on my work towards the laser stabilization and ion trap design but also covering the experimental setup as a whole. The vacuum system that I designed allows the mounting and testing of a variety of ion trap chips, with versatile optical access and a fast turn around time. I will also present the design and fabrication of a microfabricated Y junction and a 2- dimensional ion trap lattice. I achieve a suppression of barrier height and small variation of secular frequency through the Y junction, aiding to the junctions applicability to adiabatic shuttling operations. I also report the design and fabrication of a 2-D ion trap lattice. Such structures have been proposed as a means to implement quantum simulators and to my knowledge is the first microfabricated lattice trap. Electrical testing of the trap structures was undertaken to investigate the breakdown voltage of microfabricated structures with both static and radio frequency voltages. The results from these tests negate the concern over reduced rf voltage breakdown and in fact demonstrates breakdown voltages significantly above that typically required for ion trapping. This may allow ion traps to be designed to operate with higher voltages and greater ion-electrode separations, reducing anomalous heating. Lastly I present my work towards the implementation of magnetic fields gradients and microwaves on chip. This may allow coupling of the ions internal state to its motion using microwaves, thus reducing the requirements for the use of laser systems.