Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots
Xiqiao Wang, Ehsan Khatami, Fan Fei, Jonathan Wyrick, Pradeep N. Namboodiri, Ranjit Vilas Kashid, Albert F. Rigosi, Garnett W. Bryant, Richard M. Silver
The Hubbard model is an essential tool for understanding many-body physics in condensed matter systems. Artificial lattices of dopants in silicon are a promising method for the analog quantum simulation of extended Fermi-Hubbard Hamiltonians in the strong interaction regime. However, complex atom-based device fabrication requirements have meant emulating a tunable two-dimensional Fermi-Hubbard Hamiltonian in silicon has not been achieved. Here, we fabricate 3 × 3 arrays of single/few-dopant quantum dots with finite disorder and demonstrate tuning of the electron ensemble using gates and probe the many-body states using quantum transport measurements. By controlling the lattice constants, we tune the hopping amplitude and long-range interactions and observe the finite-size analogue of a transition from metallic to Mott insulating behavior. We simulate thermally activated hopping and Hubbard band formation using increased temperatures. As atomically precise fabrication continues to improve, these results enable a new class of engineered artificial lattices to simulate interactive fermionic models.
The Hubbard model is an essential tool for understanding many-body physics in condensed matter systems. Artificial lattices of dopants in silicon are a promising method for the analog quantum simulation of extended Fermi-Hubbard Hamiltonians in the strong interaction regime. However, complex atom-based device fabrication requirements have meant emulating a tunable two-dimensional Fermi-Hubbard Hamiltonian in silicon has not been achieved. Here, we fabricate 3 × 3 arrays of single/few-dopant quantum dots with finite disorder and demonstrate tuning of the electron ensemble using gates and probe the many-body states using quantum transport measurements. By controlling the lattice constants, we tune the hopping amplitude and long-range interactions and observe the finite-size analogue of a transition from metallic to Mott insulating behavior. We simulate thermally activated hopping and Hubbard band formation using increased temperatures. As atomically precise fabrication continues to improve, these results enable a new class of engineered artificial lattices to simulate interactive fermionic models.
Abstract In pursuit of a practical quantum advantage 1 , analogue quantum systems provide an invaluable way to simulate the physics of quantum materials 2–4 , quantum systems out of equilibrium 5,6 or interaction-induced localization 7 . Notable recent progress to realize such systems has been achieved in ultracold atoms 8–12 , superconducting circuits 13–15 and twisted van der Waals materials 16–19 . However, so far, these platforms have struggled to simulate large-scale strongly interacting fermionic systems at low temperatures, at which electronic correlations dominate materials properties and numerical simulations remain restricted in accuracy and scope 20,21 . Here we demonstrate the realization of a new platform consisting of large-scale 2D arrays of sub-nanometre precision-engineered atom-based quantum dots (15,000 sites) to simulate strongly interacting, low-temperature physics. By observing a metal–insulator (MI) transition on a 2D square lattice of atom-based quantum dots, we demonstrate independent and precise control of the on-site interaction U and tunnelling t . Magneto-transport measurements further indicate the formation of an insulating state driven by Mott–Hubbard/Anderson physics and promising signatures of correlated electron physics. These precision-engineered analogue quantum simulators provide a unique platform to simulate quantum materials on arbitrary 2D lattices and to explore many unanswered questions in the formation of quantum magnetism, interacting topological quantum matter and unconventional superconductivity.
Strongly interacting electron systems can provide insight into quantum many-body phenomena, such as Mott insulating behavior and spin liquidity, facilitating semiconductor optimization. The Fermi-Hubbard model is the prototypical model used to study such systems. Recent research, however, has shown that the extended Fermi-Hubbard model, which accounts for long-range interactions, is more accurate, especially for systems far from half-filling. In this study, we use the extended Fermi-Hubbard model to mathematically analyze charge transport through a lattice of quantum dots. One-dimensional chains with spinless electrons and source-drain bias are observed, focusing on the transition between the ground state and the first excited state. Level repulsion decreases the expected energy levels of anticrossings as the hopping onto the chain tends to the hopping within the chain. The distribution of charge density along the chain is characterized in terms of the hopping, nuclear, and Coulomb parameters and novel plasmonic behavior is analyzed. Minor perturbations in electron transport are identified, corresponding to the one-dimensional nature of the observed systems. This research will lead to a better understanding of electron behavior in silicon-doped semiconductors, like the formation of correlation-induced band gaps, and open the door to using the extended Fermi-Hubbard model as a more accurate alternative to study quantum many-body systems.
In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, single-site measurements in cold-atom quantum simulations of bosons revealed previously hidden local correlations. However, interacting Fermi-Hubbard systems, connected to canonical open many-body physics problems, are more difficult to simulate using cold atoms. To date, only ensemble measurements have been achieved, while the required single-site measurements and cooling remain formidable challenges. Here we demonstrate quantum simulation of a two-impurity Fermi system using subsurface Coulomb-coupled dopant atoms in silicon. Quasiparticle tunneling maps of individually identifiable coupled-spin states were obtained by scanning tunneling spectroscopy, at low effective temperatures, and resolving individual dopants. From the maps we quantified the two-body probability amplitudes and the entanglement of the overlapping (indistinguishable) fermions, enabling quantum simulation of a thought-experiment on a stretched covalent bond. Entanglement, determined by spin and orbital components, was found to increase with increasing dopant displacement, as interactions overcome tunneling, localizing spin. Looking ahead, we extracted the effective Hubbard interaction strength, which follows a hydrogenic, separation-tunable trend appropriate to simulate emergent Fermi-Hubbard phenomena in larger sets of dopants. These results pave the way for quantum simulation of larger scale correlated Fermi-Hubbard systems, exploiting atomic-scale fabrication to engineer interactions atom-by-atom.
Abstract The challenge of simulating many-body models with analogue physical systems requires both experimental precision and very low operational temperatures. Atomically precise placement of dopants in Si permits the construction of nanowires by design. We investigate the suitability of these interacting electron systems as simulators of a fermionic extended Hubbard model on demand. We describe the single-particle wavefunctions as a linear combination of dopant orbitals (LCDO). The electronic states are calculated within configuration interaction (CI). Due to the peculiar oscillatory behavior of each basis orbital, properties of these chains are strongly affected by the interdonor distance R0, in a non-monotonic way. Ground state (T = 0 K) properties such as charge and spin correlations are shown to remain robust under temperatures up to 4 K for specific values of R0. The robustness of the model against disorder is also tested, allowing some fluctuation of the placement site around the target position. We suggest that finite donor chains in Si may serve as an analog simulator for strongly correlated model Hamiltonians. This simulator is, in many ways, complementary to those based on cold atoms in optical lattices—the trade-off between the tunability achievable in the latter and the survival of correlation at higher operation temperatures for the former suggests that both technologies are applicable for different regimes.
Interacting electrons on material lattices can build up strong quantum correlations, which in turn can lead to the emergence of a wide range of novel and potentially useful magnetic and electronic material properties. Our understanding of this physics, however, is severely limited by the exponential growth in complexity with system size, which leads all classical methods to fall fundamentally short. In this thesis, I show how artificial lattices of conduction band electrons in semiconductors, so-called quantum dot arrays, can be used to directly emulate and therefore elucidate such Fermi-Hubbard physics. To this end, I focus on two approaches. A top-down approach allows to scale easily, but lacks to ability to control or measure individual sites. A bottom-up approach on the other hand utilizes the small devices employed by the community for qubit experiments, in which the control of individual sites is both a blessing and a curse. We address the issue of control to the point where mapping to relevant models is possible and efficiently calibrating larger devices becomes feasible. These results open up the inherently well-suited and scalable platform of quantum dots to emulate novel quantum states of matter.
In quantum simulation, many-body phenomena are probed in controllable quantum systems. Recently, simulation of Bose-Hubbard Hamiltonians using cold atoms revealed previously hidden local correlations. However, fermionic many-body Hubbard phenomena such as unconventional superconductivity and spin liquids are more difficult to simulate using cold atoms. To date the required single-site measurements and cooling remain problematic, while only ensemble measurements have been achieved. Here we simulate a two-site Hubbard Hamiltonian at low effective temperatures with single-site resolution using subsurface dopants in silicon. We measure quasi-particle tunnelling maps of spin-resolved states with atomic resolution, finding interference processes from which the entanglement entropy and Hubbard interactions are quantified. Entanglement, determined by spin and orbital degrees of freedom, increases with increasing valence bond length. We find separation-tunable Hubbard interaction strengths that are suitable for simulating strongly correlated phenomena in larger arrays of dopants, establishing dopants as a platform for quantum simulation of the Hubbard model.