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arXiv:2402.04300

Electron Transport Through a 1D Chain of Dopant-Based Quantum Dots

Sumedh Vangara

Published Feb 6, 2024• 1 citation
arXivHTMLPDF

Abstract

Strongly interacting electron systems can provide insight into quantum many-body phenomena, such as Mott insulating behavior and spin liquidity, facilitating semiconductor optimization. The Fermi-Hubbard model is the prototypical model used to study such systems. Recent research, however, has shown that the extended Fermi-Hubbard model, which accounts for long-range interactions, is more accurate, especially for systems far from half-filling. In this study, we use the extended Fermi-Hubbard model to mathematically analyze charge transport through a lattice of quantum dots. One-dimensional chains with spinless electrons and source-drain bias are observed, focusing on the transition between the ground state and the first excited state. Level repulsion decreases the expected energy levels of anticrossings as the hopping onto the chain tends to the hopping within the chain. The distribution of charge density along the chain is characterized in terms of the hopping, nuclear, and Coulomb parameters and novel plasmonic behavior is analyzed. Minor perturbations in electron transport are identified, corresponding to the one-dimensional nature of the observed systems. This research will lead to a better understanding of electron behavior in silicon-doped semiconductors, like the formation of correlation-induced band gaps, and open the door to using the extended Fermi-Hubbard model as a more accurate alternative to study quantum many-body systems.

DOI
10.48550/arxiv.2402.04300

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•May 3, 2006•0 citations
Strongly interacting electron systems can provide insight into quantum many-body phenomena, such as Mott insulating behavior and spin liquidity, facilitating semiconductor optimization. The Fermi-Hubbard model is the prototypical model used to study such systems. Recent research, however, has shown that the extended Fermi-Hubbard model, which accounts for long-range interactions, is more accurate, especially for systems far from half-filling. In this study, we use the extended Fermi-Hubbard model to mathematically analyze charge transport through a lattice of quantum dots. One-dimensional chains with spinless electrons and source-drain bias are observed, focusing on the transition between the ground state and the first excited state. Level repulsion decreases the expected energy levels of anticrossings as the hopping onto the chain tends to the hopping within the chain. The distribution of charge density along the chain is characterized in terms of the hopping, nuclear, and Coulomb parameters and novel plasmonic behavior is analyzed. Minor perturbations in electron transport are identified, corresponding to the one-dimensional nature of the observed systems. This research will lead to a better understanding of electron behavior in silicon-doped semiconductors, like the formation of correlation-induced band gaps, and open the door to using the extended Fermi-Hubbard model as a more accurate alternative to study quantum many-body systems.
The Hubbard model is an essential tool for understanding many-body physics in condensed matter systems. Artificial lattices of dopants in silicon are a promising method for the analog quantum simulation of extended Fermi-Hubbard Hamiltonians in the strong interaction regime. However, complex atom-based device fabrication requirements have meant emulating a tunable two-dimensional Fermi-Hubbard Hamiltonian in silicon has not been achieved. Here, we fabricate 3 × 3 arrays of single/few-dopant quantum dots with finite disorder and demonstrate tuning of the electron ensemble using gates and probe the many-body states using quantum transport measurements. By controlling the lattice constants, we tune the hopping amplitude and long-range interactions and observe the finite-size analogue of a transition from metallic to Mott insulating behavior. We simulate thermally activated hopping and Hubbard band formation using increased temperatures. As atomically precise fabrication continues to improve, these results enable a new class of engineered artificial lattices to simulate interactive fermionic models.
We propose a device for studying the Fermi-Hubbard model with long-range Coulomb interactions using an array of coupled quantum dots defined in a semiconductor two-dimensional electron-gas system. Bands above the lowest energy band are used to form the Hubbard model, so that a high average electron density may be used to implement the device. We find that depending on the average electron density, the system is well described by a one- or two-band Hubbard model. Our device design enables the control of the ratio of the Coulomb interaction to the kinetic energy of the electrons independently to the filling of the quantum dots, such that a large portion of the Hubbard phase diagram may be probed. Estimates of the Hubbard parameters suggest that a metal-Mott insulator quantum phase transition and a ddd-wave superconducting phase should be observable using current technologies.
Abstract Motivated by recent advances in fabricating artificial lattices in semiconductors and their promise for quantum simulation of topological materials, we study the one-dimensional dimerized Fermi–Hubbard model. We show how the topological phases at half-filling can be characterized by a reduced Zak phase defined based on the reduced density matrix of each spin subsystem. Signatures of bulk–boundary correspondence are observed in the triplon excitation of the bulk and the edge states of uncoupled spins at the boundaries. At quarter-filling, we show that owing to the presence of the Hubbard interaction the system can undergo a transition to the topological ground state of the non-interacting Su–Schrieffer–Heeger model with the application of a moderate-strength external magnetic field. We propose a robust experimental realization with a chain of dopant atoms in silicon or gate-defined quantum dots in GaAs where the transition can be probed by measuring the tunneling current through the many-body state of the chain.
We discuss the transition from a metal to charge- or spin-insulating phases characterized by the opening of a gap in the charge- or spin-excitation spectra, respectively. These transitions are addressed within the context of two exactly solvable Hubbard and t-J chains with long-range, 1/r hopping. We discuss the specific heat, compressibility, and magnetic susceptibility of these models as a function of temperature, the band filling, and the interaction strength. We then use conformal-field-theory techniques to extract ground-state correlation functions. Finally, by employing the g-ology analysis we show that the charge-insulator transition is accompanied by an infinite discontinuity in the Drude weight of the electrical conductivity. While the magnetic properties of these models reflect the genuine features of strongly correlated electron systems, the charge-transport properties, especially near the Mott-Hubbard transition, display a nongeneric behavior.
Strong correlations effects, which are often associated to the approach to a Mott insulating state, in some cases may be observed even far from half filling. This typically happens whenever the intersite Coulomb repulsion induces a tendency toward charge ordering, an effect that confines the electrons, and in turn favors local moment formation, i.e., Mott localization. A distinct intermediate regime then emerges as a precursor of such a Wigner-Mott transition, which is characterized by both charge and spin correlations, displaying large mass enhancements and strong renormalizations of other Fermi-liquid parameters. Here we present a careful study of a quarter-filled extended Hubbard model---a simple example where such physics can be studied in detail, and discuss its relevance for the understanding of the phenomenology of low-density two-dimensional electron gases.
Since the advent of high-TcT_cTc​ cuprate superconductors in 1986, strongly correlated electron systems have attracted much attention. Since the cuprates are essentially two-dimensional, low-dimensional systems have moved into the focus of condensed-matter theory. From a theoretical point of view, one-dimensional systems are of particular interest because there are exact numerical and analytical methods which permit detailed studies and deep insights into the many-body problem. In the first part of this thesis, using the numerically exact methods Exact Diagonalization and the Density-Matrix Renormalization Group (DMRG), we investigate the properties of the Tomonaga–Luttinger liquid which is the generic metallic state of matter in one dimension. In particular, we concentrate on the investigation of the so-called Tomonaga–Luttinger liquid parameter which determines the critical exponent α\alphaα for the density of states near the Fermi energy. Experimental results for some quasi one-dimensional materials report α≳1\alpha \gtrsim 1α≳1, which would imply Kρ≲0.17K_\rho \lesssim 0.17Kρ​≲0.17, a value which cannot be reconciled with the bare Hubbard model where KρH≥0.5K_\rho^H \geq 0.5KρH​≥0.5, i.e., αH≲1/8\alpha^H \lesssim 1/8αH≲1/8. We develop new accurate numerical methods to obtain KρK_\rhoKρ​ and investigate how to obtain such small values for KρK_\rhoKρ​ for slightly doped charge-density-wave insulators. In the second part of this thesis, using the Thermodynamic Bethe Ansatz (TBA) as exact analytical method, we investigate the one-dimensional Hubbard model in the spindisordered regime, which is characterized by the temperature being much larger than the magnetic energy scale but small compared to the Mott–Hubbard gap. Our study is motivated by the controversy about the Mott–Hubbard insulator in infinite dimensions whose ground state is also spin-disordered. In this system the determination of the precise value of the critical interaction strength Uc where the Mott–Hubbard gap closes is still unsolved. Therefore, we provide an example of a Hubbard-type model with a disordered spin background which can be solved exactly. The thermodynamics of our model can be understood in terms of gapped charged excitations with an effective dispersion which are decoupled form the spin degrees of freedom; the latter contribute only entropically. An interpretation of this regime in terms of a putative interacting-electron system at zero temperature leads to a metal-insulator transition at a finite interaction strength above which the gap opens linearly. Our exact results indicate that the strong-coupling expansion of the ground-state energy cannot be used to locate UcU_cUc​. However, the strong-coupling expansion of the gap permits a reliable extrapolation of the critical interaction strength.