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arXiv:2009.03010 · Review of Scientific Instruments

Characterizing cryogenic amplifiers with a matched temperature-variable noise source

Slawomir Simbierowicz, Visa Vesterinen, Joshua Milem, Aleksi Lintunen, Mika Oksanen, Leif Roschier, Leif Grönberg, Juha Hassel, David Gunnarsson, Russell E. Lake

Published Mar 1, 2021• 40 citations
arXivHTMLPDF

Abstract

We present a cryogenic microwave noise source with a characteristic impedance of 50 Ω, which can be installed in a coaxial line of a cryostat. The bath temperature of the noise source is continuously variable between 0.1 K and 5 K without causing significant back-action heating on the sample space. As a proof-of-concept experiment, we perform Y-factor measurements of an amplifier cascade that includes a traveling wave parametric amplifier and a commercial high electron mobility transistor amplifier. We observe system noise temperatures as low as 680−200+20 mK at 5.7 GHz corresponding to 1.5−0.7+0.1 excess photons. The system we present has immediate applications in the validation of solid-state qubit readout lines.

DOI
10.1063/5.0028951

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We present a cryogenic microwave noise source with a characteristic impedance of 50 Ω, which can be installed in a coaxial line of a cryostat. The bath temperature of the noise source is continuously variable between 0.1 K and 5 K without causing significant back-action heating on the sample space. As a proof-of-concept experiment, we perform Y-factor measurements of an amplifier cascade that includes a traveling wave parametric amplifier and a commercial high electron mobility transistor amplifier. We observe system noise temperatures as low as 680−200+20 mK at 5.7 GHz corresponding to 1.5−0.7+0.1 excess photons. The system we present has immediate applications in the validation of solid-state qubit readout lines.
Parametric amplifiers have become a workhorse in superconducting quantum computing; however, research and development of these devices has been hampered by inconsistent and, sometimes, misleading noise performance characterization methodologies. The concepts behind noise characterization are deceptively simple, and there are many places where one can make mistakes, either in measurement or in interpretation and analysis. In this article, we cover the basics of noise performance characterization and the special problems it presents in parametric amplifiers with limited power handling capability. We illustrate the issues with three specific examples: a high-electron mobility transistor amplifier, a Josephson traveling-wave parametric amplifier, and a Josephson parametric amplifier. We emphasize the use of a 50-Ω shot noise tunnel junction (SNTJ) as a broadband noise source, demonstrating its utility for cryogenic amplifier amplifications. These practical examples highlight the role of loss as well as the additional parametric amplifier "idler" input mode.
Accurate in situ calibration of microwave attenuation and amplification-chain noise is essential for superconducting quantum circuits. We demonstrate a compact, self-calibrating cryogenic noise source based on an on-chip chromium attenuator that can be resistively heated with nanowatt-level power and directly integrated into a coaxial microwave line at the mixing-chamber stage. By comparing Johnson-Nyquist noise generated by Joule and microwave heating, measured through the amplification chain, the attenuation of the input line, and hence the gain of the chain, is determined without requiring knowledge of the attenuator temperature. The device exhibits millisecond-scale response times and negligible heating of the cryostat base plate. Using this approach, we determine the gain and added noise of a cryogenic amplification chain over the 4-8 GHz band. Our results provide a simple and accurate method to characterize near-quantum-limited parametric amplifiers used in superconducting-qubit readout.
A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.
A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude–frequency response of the “supercon-ducting qubit–coplanar cavity” structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.
We report the observation of zero-point noise squeezing by means of a Josephson- junction parametric amplifier, which has been used previously to squeeze 4.2 K thermal noise1. To observe quantum noise squeezing, a number of improvements were made on the apparatus; these include the in stallation of two low-noise cryogenic high- electron-mobility-transistor (HEMT) amplifiers, which boosted the detector sensitivity an order of magnitude to 215 K. The Josephson- junction parametric amplifier was cooled to 30 mK and was operated in the degenerate mode with the signal carrier frequency at 19.16 GHz. At this frequency the vacuum noise floor is hv/2k = 0.46 K. In the deamplified quadrature a drop in the noise of 0.223 K was observed relative to the pump-off noise floor. The pump-off noise floor was established to be within 3.4 + 2.0% of the vacuum noise floor by varying the temperature of the cold termination at the parametric amplifier's input from 30 mK to 1K. A probe signal at the input of the first HEMT amplifier was used to establish that the detector system saturation was less than 7 × 10−4 dB. We have thus observed squeezing 47% ± 8% below the vacuum noise floor.
Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a C-Band monolithic microwave integrated circuit (MMIC) cryo-LNA for this purpose. This cryo-LNA is based on 150 nm GaAs pseudomorphic high electron mobility transistor (pHEMT) process and implemented with a three-stage cascaded architecture, where the first stage adopts careful impedance match to optimize the noise and return loss. The integration of negative feedback loops adopted in the second and third-stage enhances the overall stability. Moreover, the pHEMT-self bias and current multiplexing circuitry structure facilitate the reduction of power consumption and require only single bias line. Operating at an ambient temperature of 3.6 K and consuming 15 mW, the cryo-LNA demonstrates good performance in the C-band, reaching a 5 K equivalent noise temperature and an average gain of 40 dB. We further benchmark this cryo-LNA with superconducting qubits, achieving an average single-shot dispersive readout fidelity of 98.3% without assistance from a quantum-limited parametric amplifier. The development of GaAs cryo-LNA diversifies technical support necessary for large-scale quantum applications.