Abstract Superconducting nanowire single photon detectors (SNSPDs) are typically used as single-mode-fiber-coupled single-pixel detectors, but large area detectors are increasingly critical for applications ranging from microscopy to free-space quantum communications. However, the long meander-line length of such large-area SNSPDs results in a proportionately large kinetic inductance that affects the waveform generated by the device. Here, we explore changes in the rising edge of the readout pulse for a single-pixel large-area SNSPD as a function of the optical spot size on the detector and compare to the rising edge of the dark-count waveform. We observe a bimodal distribution of bright-count rise times and show that the probability of a slow rise time increases in the limit of large spot sizes, indicative of a position sensitive response. Additionally, in the limit of low bias currents, the dark-count readout pulse is most similar to the large spot-size bright-count readout pulse, which suggests that dark counts arise from locations spanning the device. These results are consistent with a simple model of traveling microwave modes excited by single photons incident at varying positions along the length of the nanowire.
Abstract Superconducting nanowire single photon detectors (SNSPDs) are typically used as single-mode-fiber-coupled single-pixel detectors, but large area detectors are increasingly critical for applications ranging from microscopy to free-space quantum communications. However, the long meander-line length of such large-area SNSPDs results in a proportionately large kinetic inductance that affects the waveform generated by the device. Here, we explore changes in the rising edge of the readout pulse for a single-pixel large-area SNSPD as a function of the optical spot size on the detector and compare to the rising edge of the dark-count waveform. We observe a bimodal distribution of bright-count rise times and show that the probability of a slow rise time increases in the limit of large spot sizes, indicative of a position sensitive response. Additionally, in the limit of low bias currents, the dark-count readout pulse is most similar to the large spot-size bright-count readout pulse, which suggests that dark counts arise from locations spanning the device. These results are consistent with a simple model of traveling microwave modes excited by single photons incident at varying positions along the length of the nanowire.
To analyze the switching dynamics and output performance of a superconducting nanowire single photon detector (SNSPD), the nanowire is usually modelled as an inductor in series with a time-varying resistor induced by the absorption of a photon. Our recent experimental results show that, due to the effect of kinetic inductance, for a SNSPD made of a nanowire of sufficient length, its geometrical length can be comparable to or even longer than the effective wavelength of frequencies contained in the output pulse. In other words, a superconducting nanowire can behave as a distributed transmission line so that the readout pulse depends on the photon detection location and the transmission line properties of the nanowire. Here, we develop a distributed model for a superconducting nanowire and apply it to simulate the output performance of a long nanowire designed into a coplanar waveguide. We compare this coplanar waveguide geometry to a conventional meander nanowire geometry. The simulation results agree well with our experimental observations. With this distributed model, we discuss the importance of microwave design of a nanowire and how impedance matching can affect the output pulse shape. We also discuss how the distributed model affects the growth and decay of the photon-triggered resistive hotspot.
Ever since superconducting nanowire single-photon detectors (SNSPDs or SSPDs) were demonstrated, they have attracted a considerable attention due to the detectors’ promising performance that includes high detection efficiency (DE), low dark count rate (DCR), broadband sensitivity, and low timing jitter. The system detection efficiency (SDE) has been improved to be over 90% with a wavelength of 1550 nm in a fiber-coupled system by embedding the SNSPD in optical cavities. However, the implementation of optical cavity usually reduces the bandwidth of SNSPDs. As a result, there are some recent works on increasing the bandwidth of SNSPD. Furthermore, the size of the active area of meandered nanowires has to be compatible with the core size of an optical fiber such that good optical coupling can be achieved; this setup requires a long nanowire with a large kinetic inductance, thus resulting in a small counting rate and a large timing jitter, particularly for multi-mode fiber-coupled devices. Nevertheless, a particularly impressive waveguide-coupled SNSPD has been developed in recent years. By placing an SNSPD atop an optical waveguide that has been fabricated on various substrate materials, photons propagating in the waveguide have been found to be evanescently absorbed by nanowires that are only a few tens of microns long. The on-chip DE of this device has been estimated to be over 90%, thus indicating that it has both high absorptance and high intrinsic DE. If the waveguide and the nanowire are correctly dimensioned, the absorptance of this device can reach over 90% for a wavelength range of more than 700 nm. Furthermore, the length of the nanowire is shorter than that of the fiber-coupled SNSPD, thus leading to a higher count rate and lower timing jitter (~18 ps). However, unsatisfactory coupling losses between the optical fiber and the waveguide in such devices can decrease its SDE (~10%), thus limiting its applicability to quantum photonic integrated circuits (QPIC). Recently, we proposed a type of SNSPD that was coupled with microfibers (MFs), and simulations for this SNSPD indicated that its absorption would be as high as 90%. Microfibers and nanofibers, tapered adiabatically from standard fibers, with diameters close to or smaller than the wavelength of the guided light were demonstrated to have low transmittance losses by Tong et al. in 2003. MFs have been shown to have many interesting properties, such as strong evanescent fields, tight optical confinement, wideband abilities, and small masses; these properties are appealing for applications such as optical sensing and coupling. MFs also provide seamless connections with high transmittance from standard fibers; therefore, MF-coupled SNSPDs can achieve both high SDEs and wideband compatibility. We proposed and demonstrated the MF-coupled SNSPDs successfully. The simulation results indicate that with optimal device structure, the optical absorption with efficiency < 90% can be realized over a wavelength range of 350 nm to 2150 nm. The fabricated MF-coupled SNSPD, shows unparalleled broadband system detection efficiencies (SDEs) of more than 50% from 630 nm to 1500 nm. The SDEs reach 66% at 785 nm and 45% at 1550 nm. These results pave the way for ultra-broadband weak light detection with quantum-limit sensitivity.
Single-photon detection is extremely important for a number of different applications such as quantum cryptography, CMOS testing and even biomedical research. Most of the applications of single-photon detector require high efficiency combined with high time resolution, high count rates and low dark counts. Superconducting nanowire single-photon detectors has emerged provides this combination unlike any other available single-photon detectors. Some of the applications of superconducting nanowire single-photon detectors (SNSPD's) require larger area SNSPD's without affecting it's performance. For this purpose, multi-pixel SNSPD's would provide a solution. To this end, prototype 4- and 16-pixel detectors have been characterised in terms of a number of performance parameters such as critical current, count rate behaviour and timing jitter. Aside from this, simulations have been performed on detection statistics and relative illumination of the individual pixels of a multi-pixel SNSPD. Results show that for 4-pixel detectors, all desired aspects have been achieved, but not yet combined in one detector. The 16-pixel detectors showed excellent critical currents and count rate behaviour but, most likely due to the fact that they were prototype chips with little to no protection, had several not functioning pixels.
Superconducting nanowire single-photon detectors (SNSPDs) with both an ultra-large-active area and a high count rate (CR) are challenging from the design and fabrication. Here, we develop a NbN SNSPD with a circular active area of 300 μm-in-diameter and use multiple approaches to boost the maximal count rate (MCR). This large-active-area SNSPD is divided into nine pixels (parts). Each pixel consists of serially connected two superconducting nanowire avalanche photodetectors (SC-2SNAP), which yielded a four-fold reduction in the kinetic inductance of a single pixel. To further increase MCR, an optimized series resistance of about 380 Ω is added to each pixel, reducing the full recovery time of each pixel from a few microseconds to approximately 90 ns. All nine pixels show uniform superconducting critical temperatures of ∼7.4 K and switching currents in the range of 15.3–16.7 μA. When the detector coupled to a single-mode fiber and illuminated with 1064-nm photons, the single-pixel exhibits a well-saturated system detection efficiency (SDE) of 67% at a dark CR of 30 Hz, and its CR exceeds 10 MHz with an SDE of 50%. When coupled to a 200-μm multi-mode fiber, the total SDE of nine pixels is approximately 42% and the total MCR exceeds 43 MHz.
Abstract We demonstrate a large active area superconducting single-nanowire photon detector with a diameter of Φ100 μ m. The detector was fabricated on a Si substrate with distributed Bragg reflector acting as an optical cavity and coupled with a 105 μ m multi-mode optical fiber. Owing to the extensive kinetic inductor caused by the large sensitive area of the detector, the response waveform exhibited a large overshoot, causing the device to latch with the increasing bias current. By adding a resistor in series with the device, the overshoot was suppressed, and the maximal bias current increased from 25 to 31 μ A. A well-saturated detection efficiency with a maximal value of 65% was achieved at the wavelength of 532 nm. Moreover, the maximal counting rate improved from 1 to 10 MHz.