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arXiv:1911.12429 · Optical Materials Express

Spatially controlled fabrication of single NV centers in IIa HPHT diamond

Sergei D. Trofimov, Сергей Александрович Тарелкин, Stepan V. Bolshedvorskii, Vitaly S. Bormashov, Sergey Yu. Troshchiev, Anton V. Golovanov, Nikolay V. Luparev, Dmitrii D. Prikhodko, Kirill N. Boldyrev, Sergey A. Terentiev, Alexey V. Akimov, Nikolay I. Kargin, Nikolay S. Kukin, Alexander S. Gusev, Andrey A. Shemukhin, Yu. V. Balakshin, С.Г. Буга, Vladimir D. Blank

Published Dec 23, 2019• 32 citations
arXivHTMLPDF

Abstract

Single NV centers in HPHT IIa diamond are fabricated by helium implantation through lithographic masks. The concentrations of created NV centers in different growth sectors of HPHT are compared quantitatively. It is shown that the purest {001} growth sector (GS) of HPHT diamond allows to create groups of single NV centers in predetermined locations. The {001} GS HPHT diamond is thus considered a good material for applications that involve single NV centers.

DOI
10.1364/ome.10.000198

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Single NV centers in HPHT IIa diamond are fabricated by helium implantation through lithographic masks. The concentrations of created NV centers in different growth sectors of HPHT are compared quantitatively. It is shown that the purest {001} growth sector (GS) of HPHT diamond allows to create groups of single NV centers in predetermined locations. The {001} GS HPHT diamond is thus considered a good material for applications that involve single NV centers.
The implantation of diamonds with helium ions has become a common method to create hundreds-nanometers-thick near-surface layers of NV centers for high-sensitivity sensing and imaging applications; however, optimal implantation dose and annealing temperature are still a matter of discussion. In this study, we irradiated HPHT diamonds with an initial nitrogen concentration of 100 ppm using different implantation doses of helium ions to create 200-nm thick NV layers. We compare a previously considered optimal implantation dose of ∼1012 He+/cm2 to double and triple doses by measuring fluorescence intensity, contrast, and linewidth of magnetic resonances, as well as longitudinal and transversal relaxation times T1 and T2. From these direct measurements, we also estimate concentrations of P1 and NV centers. In addition, we compare the three diamond samples that underwent three consequent annealing steps to quantify the impact of processing at 1100 °C, which follows initial annealing at 800 °C. By tripling the implantation dose, we have increased the magnetic sensitivity of our sensors by 28±5%. By projecting our results to higher implantation doses, we demonstrate that it is possible to achieve a further improvement of up to 70%. At the same time, additional annealing steps at 1100 °C improve the sensitivity only by 6.6 ± 2.7%.
ABSTRACT With unique optical and spin properties, the negatively charged nitrogen‐vacancy (NV − ) center in diamond has become a leading physical platform for quantum information processing. Fabrication of NV centers involves three steps: introducing nitrogen atoms, creating lattice vacancies, and combining these two types of defects. The final step is typically achieved by high‐temperature annealing, as vacancy migration in diamond is thermally activated above 600°C. Compared to low‐pressure high‐temperature (LPHT) annealing, high‐pressure and high‐temperature (HPHT) treatment allows for much higher annealing temperatures and longer durations, providing new opportunities to optimize key metrics of NV centers. This short review summarizes recent experimental progress in this direction. Dense NV centers with good spin coherence and single NV centers with excellent optical properties have been produced through HPHT growth and post‐treatment of single‐crystal diamonds. In addition, structural imaging, optical characterization, and DFT calculations provide further insights into the dynamics of defect migration under high‐temperature annealing. These results offer new perspectives on the fabrication of color centers in diamond and other wide‐gap semiconductor materials, including silicon carbide and hexagonal boron nitride, for advanced quantum applications.
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Negatively charged nitrogen-vacancy (NV − ) centres formed in diamond crystals are point defects that have potential applications in various quantum devices such as highly sensitive magnetic sensors. To improve the sensitivity of magnetic sensors using NV − centres, it is essential to precisely control the nitrogen concentration in the crystals. In this paper, we demonstrated that nitrogen concentration in diamond can be controlled with high precision for the following two representative growth methods. One is the high-pressure/high-temperature (HPHT) synthesis method and the other is the chemical vapour deposition (CVD) method. The nitrogen concentration of HPHT-grown diamond decreased semi-logarithmically with increasing contents of titanium or aluminium as nitrogen getter materials. The nitrogen concentration of CVD-grown diamond increased linearly with increasing the flow rate ratio of nitrogen to carbon. NV − centres were formed by controlling the total fluence of electron beams so that approximately 20% of the nitrogen became NV − centres. The coherence time of electron spin of NV − centres obtained by the Hahn-echo pulse sequence T 2 of these diamond crystals was inversely proportional to the nitrogen concentration. A comparison of T 2 of the NV − centres for HPHT-synthesized and CVD-grown diamonds showed no significant difference between them. This article is part of the Theo Murphy meeting issue ‘Diamond for quantum applications’.