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arXiv:1908.02606 · Superconductor Science and Technology

Geometric scaling of two-level-system loss in superconducting resonators

David Niepce, Jonathan Burnett, Martí Gutierrez Latorre, Jonas Bylander

Published Dec 13, 2019• 38 citations
arXivHTMLPDF

Abstract

Abstract We perform an experimental and numerical study of dielectric loss in superconducting microwave resonators at low temperature. Dielectric loss, due to two-level systems, is a limiting factor in several applications, e.g. superconducting qubits, Josephson parametric amplifiers, microwave kinetic-inductance detectors, and superconducting single-photon detectors. Our devices are made of disordered NbN, which, due to magnetic-field penetration, necessitates 3D finite-element simulation of the Maxwell–London equations at microwave frequencies to accurately model the current density and electric field distribution. From the field distribution, we compute the geometric filling factors of the lossy regions in our resonator structures and fit the experimental data to determine the intrinsic loss tangents of its interfaces and dielectrics. We put emphasis on the loss caused by a spin-on-glass resist such as hydrogen silsesquioxane (HSQ), used for ultrahigh lithographic resolution relevant to the fabrication of nanowires. We find that, when used, HSQ is the dominant source of loss, with a loss tangent of δ HSQ i = 8 × 10 − 3 .

DOI
10.1088/1361-6668/ab6179

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Abstract We perform an experimental and numerical study of dielectric loss in superconducting microwave resonators at low temperature. Dielectric loss, due to two-level systems, is a limiting factor in several applications, e.g. superconducting qubits, Josephson parametric amplifiers, microwave kinetic-inductance detectors, and superconducting single-photon detectors. Our devices are made of disordered NbN, which, due to magnetic-field penetration, necessitates 3D finite-element simulation of the Maxwell–London equations at microwave frequencies to accurately model the current density and electric field distribution. From the field distribution, we compute the geometric filling factors of the lossy regions in our resonator structures and fit the experimental data to determine the intrinsic loss tangents of its interfaces and dielectrics. We put emphasis on the loss caused by a spin-on-glass resist such as hydrogen silsesquioxane (HSQ), used for ultrahigh lithographic resolution relevant to the fabrication of nanowires. We find that, when used, HSQ is the dominant source of loss, with a loss tangent of δ HSQ i = 8 × 10 − 3 .
Superconducting quantum devices have gained increasing interest over the past 15 years because of their role as promising candidates for implementing a large-scale quantum computer and as ultra-sensitive detectors. Superconducting resonators are one type of superconducting device which are used in a variety of applications including quantum computing and radioastronomy. They can achieve large quality factors which are important for these applications and a variety of others. Specific examples of these applications include the readout and coupling of superconducting qubits and also microwave kinetic inductance detector arrays for sub-mm wavelength astronomical measurements. High quality factors also enable the study of very subtle features in the electromagnetic response of the resonator. This feature in turn offers provides a method to characterize loss mechanisms which affect the performance of superconducting qubits, by measuring the quality factor of a resonator. Dielectric loss is an example of such a loss mechanism, and is considered to be one of, if not \\it the \\rm major obstacle to overcome in order to construct scalable quantum technologies based on superconducting devices. This type of loss arises from the coupling of the electric field in the device to spurious degrees of freedom which arise naturally the dielectric environment of the device. The fast-growing interest in the physics and applications of superconducting resonators has renewed interest in an improving our fundamental understanding of dielectric loss. This interest involves the study of a much bigger and older question in condensed matter physics; namely, what is the microscopic physics which governs the behaviour and of an amorphous material at low-temperatures? \n \nIn this thesis, we present a systematic study of dielectric loss in amorphous aluminum oxide using superconducting microwave resonators. Measurements of the intrinsic loss tangent over a large temperature range of 40~mK to 1~K are presented and analyzed in detail. Some aspects of the data are well understood in terms of the standard tunnelling two-level system model, while others require a deeper analysis of the electrodynamics of the resonator and insights from more advanced theories. We employ a consistent approach using numerical simulations of the resonator to understand loss mechanisms arising from both an inhomogeneous electric field and multiple dielectric layers. We measure saturation effects which provide insight into coherent properties of two-level system ensembles and the mutual interaction between them. Excellent agreement with the two-level system model is found for intrinsic losses, however the strong dependence on temperature which we observe for saturation effects is not predicted in the standard form of the model. We find that this dependence can be understood in terms of the theory of spectral diffusion which is consistent with a strong mutual interaction between two-level systems contributes to broadening of their spectral linewidths.
The improvement of the coherence times of superconducting qubits depends on the reduction of the dielectric losses in the insulating materials implemented for the device fabrication. These losses depend on the density of spurious dipoles of different nature (two-level systems, TLSs) which couple to phase qubits and, hence, limit their coherence times. Hydrogenated amorphous silicon (a-Si:H), because of its lower loss tangent (tan δ) among conventional dielectrics (a-SiO, a-SiO2, a-SiNx:H), is considered as the best amorphous dielectric for superconducting qubit application. We have developed a reliable method for the direct measurement of dielectric losses in amorphous dielectric thin films using a novel design based on four lumped superconducting LC resonators connected in series without coupling capacitors. The losses are obtained as tan δ = 1/Q0, where Q0 is the intrinsic quality factor of the resonator, measured at 3 dB above the resonance frequency without any fitting procedure. The series type LC resonators with a-Si:H as dielectric were fabricated by the Nb technology. The measurements were done at the conditions of a qubit application (0.5 -10 GHz frequency range and low temperatures). The low values of the loss tangent of a-Si:H (up to 2.5 x 10−5 at 4.2 K) have required the development of superconducting housing for the resonators in order to eliminate a spurious dependence of tan δ on the microwave power, by reducing losses which were not originated in the dielectric itself. The results of the simulations agree well with the experiments.
In this thesis, we first demonstrate that a disordered superconductor with high kinetic inductance can realise a microwave low-loss, non-dissipative circuit element with impedance greater than the quantum resistance. This element, known as a superinductor, can suppress the fluctuations of charge in a quantum circuit.For this purpose, we fabricated and characterised 20 nm thick, 40 nm wide niobium-nitride nanowires and determined the impedance to 6.795 kΩ. We demonstrate internal quality factors Qi = 2.5e4 in nanowire resonators at single photon excitation, which is significantly higher than values reported in devices with similar materials and geometries. Moreover, we show that the dominant dissipation in our nanowires is not an intrinsic property of the disordered films, but can instead be fully understood within the framework of two-level systems.To further characterise these losses, we then explore the geometrical scaling, toward nanowire dimensions, of dielectric losses in superconducting microwave resonators fabricated with the same techniques and from the same NbN thin-film as the nanowire superinductors. For this purpose, we perform an experimental and numerical study of dielectric loss at low temperatures. Using 3D finite-element simulation of the Maxwell--London equations, we compute the geometric filling factors of the lossy regions in our resonator structures and fit the experimental data to determine the intrinsic loss tangents of its interfaces and dielectrics. Finally, we study the effect of two-level systems on the performance of various superconducting quantum circuits. For this purpose, we measure coherence-time fluctuations in qubits and frequency fluctuations in resonators. In all devices, through statistical analysis, we identify the signature of individual Lorentzian fluctuators in the noise. We find that fluctuations in qubit relaxation are local to the qubit and are caused by instabilities of near-resonant two-level-systems. Furthermore, when examining the low-frequency noise of three different types of superconducting resonator - one NbN nanowire, one Al coplanar waveguide, and one Al 3D cavity - we observe a similar power-law dependence of the Lorentzian switching time and amplitude on the circulating power in the resonators, suggesting a common noise mechanism in the three different types of devices.
The performance of superconducting circuits for quantum computing is limited by materials losses. In particular, coherence times are typically bounded by two-level system (TLS) losses at single photon powers and millikelvin temperatures. The identification of low loss fabrication techniques, materials, and thin film dielectrics is critical to achieving scalable architectures for superconducting quantum computing. Superconducting microwave resonators provide a convenient qubit proxy for assessing performance and studying TLS loss and other mechanisms relevant to superconducting circuits such as non-equilibrium quasiparticles and magnetic flux vortices. In this review article, we provide an overview of considerations for designing accurate resonator experiments to characterize loss, including applicable types of losses, cryogenic setup, device design, and methods for extracting material and interface losses, summarizing techniques that have been evolving for over two decades. Results from measurements of a wide variety of materials and processes are also summarized. Finally, we present recommendations for the reporting of loss data from superconducting microwave resonators to facilitate materials comparisons across the field.
Superconducting coplanar-waveguide (CPW) resonators are one of the key devices in circuit quantum electrodynamics (cQED). Their performance can be limited by dielectric losses in the substrate and in the material interfaces. Reliable modeling is required to aid in the design of low-loss CPW structures for cQED. We analyze the geometric dependence of the dielectric losses in CPW structures using finite-element modeling of the participation ratios of the lossy regions. In a practical scenario, uncertainties in the the dielectric constants and loss tangents of these regions introduce uncertainties in the theoretically predicted participation ratios. We present a method for combining loss simulations with measurements of two-level-system-limited quality factors and resonance frequencies of CPW resonators. Namely, we solve an inverse problem to find model parameters producing the measured values. High quality factors are obtainable by properly designing the cross-sectional geometries of the CPW structures, but more accurate modeling and design methods for low-loss CPW resonators are called for major future improvements. Our nonlinear optimization methodology for solving the aforementioned inverse problem is a step in this direction.
While several experiments claim that two-level system (TLS) defects in amorphous surfaces and interfaces are responsible for energy relaxation in superconducting resonators and qubits, none can provide quantitative explanation of their data in terms of the conventional noninteracting TLS model. Here a model that interpolates between the interacting and noninteracting TLS loss tangent is proposed to perform numerical analysis of experimental data and extract information about TLS parameters and their distribution. As a proof of principle, the model is applied to TESLA cavities that contain only a single lossy material in their interior, the niobium-niobium oxide interface. The best fits show interacting TLSs with a sharp modulus of electric dipole moment for both thin (5nm5\phantom{\rule{0.2em}{0ex}}\mathrm{nm}5nm) and thick (100nm100\phantom{\rule{0.2em}{0ex}}\mathrm{nm}100nm) oxides, indicating that the TLSs are ``atomic'' instead of ``glassy.'' The proposed method can be applied to other devices with multiple material interfaces and substrates, with the goal of elucidating the nature of TLSs causing energy loss in resonators and qubits.