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arXiv:1903.10461

An ultrahigh-impedance superconducting thermal switch for interfacing superconductors to semiconductors and optoelectronics

Adam N. McCaughan, Varun Boehm Verma, Sonia Mary Buckley, Jason P. Allmaras, Alexander G. Kozorezov, Alexander N. Tait, Sae Woo Nam, Jeffrey M. Shainline

Published Mar 25, 2019• 1 citation
arXivHTMLPDF

Abstract

A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically proposed as a top-level control in these architectures, with low-temperature passive components and intermediary superconducting electronics acting as the direct interface to the lowest-temperature stages. The architectures, therefore, require a low-power superconductor-semiconductor interface, which is not currently available. Here we report a superconducting switch that is capable of translating low-voltage superconducting inputs directly into semiconductor-compatible (above 1,000 mV) outputs at kelvin-scale temperatures (1 K or 4 K). To illustrate the capabilities in interfacing superconductors and semiconductors, we use it to drive a light-emitting diode (LED) in a photonic integrated circuit, generating photons at 1 K from a low-voltage input and detecting them with an on-chip superconducting single-photon detector. We also characterize our device's timing response (less than 300 ps turn-on, 15 ns turn-off), output impedance (greater than 1 MΩ), and energy requirements (0.18 fJ/um^2, 3.24 mV/nW).

DOI
10.48550/arxiv.1903.10461

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A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically proposed as a top-level control in these architectures, with low-temperature passive components and intermediary superconducting electronics acting as the direct interface to the lowest-temperature stages. The architectures, therefore, require a low-power superconductor-semiconductor interface, which is not currently available. Here we report a superconducting switch that is capable of translating low-voltage superconducting inputs directly into semiconductor-compatible (above 1,000 mV) outputs at kelvin-scale temperatures (1 K or 4 K). To illustrate the capabilities in interfacing superconductors and semiconductors, we use it to drive a light-emitting diode (LED) in a photonic integrated circuit, generating photons at 1 K from a low-voltage input and detecting them with an on-chip superconducting single-photon detector. We also characterize our device's timing response (less than 300 ps turn-on, 15 ns turn-off), output impedance (greater than 1 MΩ), and energy requirements (0.18 fJ/um^2, 3.24 mV/nW).
Interface circuits are the key components that enable the hybrid integration of superconductor and semiconductor digital electronics. The design requirements of superconductor-semiconductor interface circuits vary depending on the application, such as high-performance classical computing, superconducting quantum computing, and digital signal processing. In this survey, various interface circuits are categorized based on the working principle and structure. The superconducting output drivers are explored, which are capable of converting and amplifying, e.g., single flux quantum (SFQ) voltage pulses, to voltage levels that semiconductor circuits can process. Several trade-offs between circuit- and system-level design parameters are examined. Accordingly, parameters such as the data rate, output voltage, power dissipation, layout area, thermal/heat load of cryogenic cables, and bit-error rate are considered.
Superconducting devices have enabled breakthrough performance in quantum sensing and ultralow-power computing. Nevertheless, the need for a cryoelectronics platform that can interface superconductor electronics with complementary metal-oxide-semiconductor (CMOS) devices has become increasingly evident in many cutting-edge applications. In this work, we present a three-terminal micrometer-wide superconducting-wire-based cryotron switch (wTron), fabricated using photolithography, that can directly interface with CMOS electronics. The wTron features an output impedance exceeding $1\phantom{\rule{0.2em}{0ex}}\mathrm{k}\mathrm{\ensuremath{\Omega}}$ and exhibits reduced sensitivity to ambient magnetic noise, similar to its nanoscale predecessor, the nanocryotron. In addition, its micrometer-wide wires support switching currents in the milliamp range, making it well suited to driving current-hungry resistive loads and highly capacitive CMOS loads. We demonstrate this capability by using the wTron to drive room-temperature CMOS electronics, including a light-emitting diode and a metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate capacitance of 500 pF. We then examine the optimal design parameters required for wTrons to drive CMOS loads, such as MOSFETs, high-electron mobility transistors, and electro-optic modulators. Furthermore, to demonstrate the foundry readiness of the wTron, we fabricate wTrons using MIT Lincoln Laboratory's SFQ5ee superconducting process and characterize their switching behavior. Our work shows that the wTron will facilitate the interface between superconductor electronics and CMOS devices, thereby paving the way for the development of foundry-compatible cryoelectronic ecosystems to advance next-generation computing and quantum applications.
Photonic integrated circuits (PICs) have enabled novel functionality in quantum optics, quantum information processing and quantum communication. PICs based on Silicon Nitride (Si3N4) provide low-loss passive components and are compatible with efficient superconducting nanowire single-photon detectors (SNSPDs). For realizing functional quantum photonic systems, the integration with active phase-shifters is needed which is challenging at the cryogenic temperatures needed for operating SNSPDs. Here we demonstrate a cryo-compatible phase shifter using a low-voltage opto-mechanical modulator and show joint operation with SNSPDs at 1.3 K. We achieve a half-wave voltage of 4.6 V, single-photon detection with 88% on-chip detection efficiency (OCDE) and a low timing jitter of 12.2 ps. Our approach allows for operating reconfigurable quantum photonic circuits with low dissipation in a cryogenic setting.
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