Abstract Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper we present a full theoretical analysis of electronic single-shot readout and describe critical parameters to achieve high fidelity readout. In particular, we derive a model for energy selective state readout based on a charge detector response and examine how to optimise the fidelity by choosing correct experimental parameters. Although we focus on single electron spin readout, the theory presented can be applied to other electronic readout techniques in semiconductors that use a reservoir.
Abstract Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper we present a full theoretical analysis of electronic single-shot readout and describe critical parameters to achieve high fidelity readout. In particular, we derive a model for energy selective state readout based on a charge detector response and examine how to optimise the fidelity by choosing correct experimental parameters. Although we focus on single electron spin readout, the theory presented can be applied to other electronic readout techniques in semiconductors that use a reservoir.
Abstract Ideal projective quantum measurement makes the system state collapse in one of the observable operator eigenstates | ϕ α ⟩ , making it a powerful tool for preparing the system in the desired pure state. Nevertheless, experimental realisations of projective measurement are not ideal. During the measurement time needed to overcome the classical noise of the apparatus, the system state is often (slightly) perturbed, which compromises the fidelity of initialisation. In this paper, we propose an analytical model to analyse the initialisation fidelity of the system performed by the single-shot readout. We derive a method to optimise parameters for the three most used cases of photon counting based readouts for NV colour centre in diamond, charge state, nuclear spin and low temperature electron spin readout. Our work is of relevance for the accurate description of initialisation fidelity of the quantum bit when the single-shot readout is used for initialisation via post-selection or real-time control.
The ground-state electronic spin of a negatively charged nitrogen-vacancy center in diamond can be used for room-temperature experiments showing coherent qubit functionality. At room temperature, photoluminescence-based qubit readout has low single-shot fidelity; however, the populations of the qubit’s two basis states can be inferred using multi-shot readout. In this work, we calculate the dependence of the error of a multi-shot inference method on various parameters of the readout process. This multi-shot readout error scales as Δ/N, with N being the number of shots, suggesting to use the coefficient Δ as a simple multi-shot readout error benchmark. Our calculation takes into account background photons, photon loss, and initialization error. Our model enables the identification of the readout error budget, i.e., the role various imperfections play in setting the readout error. Our results enable experimentalists and engineers to focus their efforts on those hardware improvements that yield the highest performance gain for multi-shot readout.
Abstract High fidelity single-shot readout of qubits is a crucial component for fault-tolerant quantum computing and scalable quantum networks. In recent years, the nitrogen-vacancy (NV) center in diamond has risen as a leading platform for the above applications. The current single-shot readout of the NV electron spin relies on resonance fluorescence method at cryogenic temperature. However, the spin-flip process interrupts the optical cycling transition, therefore, limits the readout fidelity. Here, we introduce a spin-to-charge conversion method assisted by near-infrared (NIR) light to suppress the spin-flip error. This method leverages high spin-selectivity of cryogenic resonance excitation and flexibility of photoionization. We achieve an overall fidelity > 95% for the single-shot readout of an NV center electron spin in the presence of high strain and fast spin-flip process. With further improvements, this technique has the potential to achieve spin readout fidelity exceeding the fault-tolerant threshold, and may also find applications on integrated optoelectronic devices.
Abstract Spin qubits based on semiconductor quantum dots can offer high coherence times and gate fidelities, and are a potential platform for quantum computation. However, scaling up the number of qubits to the level required for fault-tolerant quantum computing is challenging and will require single-shot, low-footprint qubit readout. Here we report single-shot readout of a spin qubit unit cell using in situ dispersive readout. Our compact, foundry-fabricated unit cell is composed of two electron spins with a controllable exchange interaction, and with it we demonstrate initialization, single-shot readout and a two-electron entangling gate. From exchange oscillations, we extract a spin visibility of 80.7(8)% in the coherent control of a qubit, despite a relatively small lever arm to the resonator gate (less than 0.15(5) eV V −1 ). We show that the unit cell can be operated at up to 1 K with low charge noise levels, extracted using free induction decay.
High fidelity single-shot readout of qubits is a crucial component for fault-tolerant quantum computing and scalable quantum networks. In recent years, the nitrogen-vacancy (NV) center in diamond has risen as a leading platform for the above applications. The current single-shot readout of the NV electron spin relies on resonance fluorescence method at cryogenic temperature. However, the spin-flip process interrupts the optical cycling transition, therefore, limits the readout fidelity. Here, we introduce a spin-to-charge conversion method assisted by near-infrared (NIR) light to suppress the spin-flip error. This method leverages high spin-selectivity of cryogenic resonance excitation and flexibility of photoionization. We achieve an overall fidelity > 95% for the single-shot readout of an NV center electron spin in the presence of high strain and fast spin-flip process. With further improvements, this technique has the potential to achieve spin readout fidelity exceeding the fault-tolerant threshold, and may also find applications on integrated optoelectronic devices.
High-fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error-correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we present a readout technique that enhances the readout fidelity in a linear SiMOS four-dot array by amplifying correlations between a pair of single-electron transistors, known as a twin SET. By recording and subsequently correlating the twin SET traces as we modulate the dot detuning across a charge transition, we demonstrate a reduction in the charge readout infidelity by over one order of magnitude compared to traditional readout methods. We also study the spin-to-charge conversion errors introduced by the modulation technique and conclude that faster modulation frequencies avoid relaxation-induced errors without introducing significant spin-flip errors, favoring the use of the technique at short integration times. This method not only allows for faster and higher-fidelity qubit measurements but it also enhances the signal corresponding to charge transitions that take place farther away from the sensors, enabling a way to circumvent the reduction in readout fidelities in large arrays of qubits. Published by the American Physical Society 2024