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arXiv:2505.17605 · Journal of Applied Physics

Multi-shot readout error benchmark of the nitrogen-vacancy center’s electronic qubit

Péter Boross, Domonkos Svastits, Győző Egri, András Pályi

Published Jun 5, 2025• 1 citation
arXivHTMLPDF

Abstract

The ground-state electronic spin of a negatively charged nitrogen-vacancy center in diamond can be used for room-temperature experiments showing coherent qubit functionality. At room temperature, photoluminescence-based qubit readout has low single-shot fidelity; however, the populations of the qubit’s two basis states can be inferred using multi-shot readout. In this work, we calculate the dependence of the error of a multi-shot inference method on various parameters of the readout process. This multi-shot readout error scales as Δ/N, with N being the number of shots, suggesting to use the coefficient Δ as a simple multi-shot readout error benchmark. Our calculation takes into account background photons, photon loss, and initialization error. Our model enables the identification of the readout error budget, i.e., the role various imperfections play in setting the readout error. Our results enable experimentalists and engineers to focus their efforts on those hardware improvements that yield the highest performance gain for multi-shot readout.

DOI
10.1063/5.0261836

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The ground-state electronic spin of a negatively charged nitrogen-vacancy center in diamond can be used for room-temperature experiments showing coherent qubit functionality. At room temperature, photoluminescence-based qubit readout has low single-shot fidelity; however, the populations of the qubit’s two basis states can be inferred using multi-shot readout. In this work, we calculate the dependence of the error of a multi-shot inference method on various parameters of the readout process. This multi-shot readout error scales as Δ/N, with N being the number of shots, suggesting to use the coefficient Δ as a simple multi-shot readout error benchmark. Our calculation takes into account background photons, photon loss, and initialization error. Our model enables the identification of the readout error budget, i.e., the role various imperfections play in setting the readout error. Our results enable experimentalists and engineers to focus their efforts on those hardware improvements that yield the highest performance gain for multi-shot readout.
Abstract High-fidelity projective readout of a qubit’s state in a single experimental repetition is a prerequisite for various quantum protocols of sensing and computing. Achieving single-shot readout is challenging for solid-state qubits. For Nitrogen-Vacancy (NV) centers in diamond, it has been realized using nuclear memories or resonant excitation at cryogenic temperature. All of these existing approaches have stringent experimental demands. In particular, they require a high efficiency of photon collection, such as immersion optics or all-diamond micro-optics. For some of the most relevant applications, such as shallow implanted NV centers in a cryogenic environment, these tools are unavailable. Here we demonstrate an all-optical spin readout scheme that achieves single-shot fidelity even if photon collection is poor (delivering less than 10 3 clicks/second). The scheme is based on spin-dependent resonant excitation at cryogenic temperature combined with spin-to-charge conversion, mapping the fragile electron spin states to the stable charge states. We prove this technique to work on shallow implanted NV centers, as they are required for sensing and scalable NV-based quantum registers.
High fidelity single-shot readout of qubits is a crucial component for fault-tolerant quantum computing and scalable quantum networks. In recent years, the nitrogen-vacancy (NV) center in diamond has risen as a leading platform for the above applications. The current single-shot readout of the NV electron spin relies on resonance fluorescence method at cryogenic temperature. However, the spin-flip process interrupts the optical cycling transition, therefore, limits the readout fidelity. Here, we introduce a spin-to-charge conversion method assisted by near-infrared (NIR) light to suppress the spin-flip error. This method leverages high spin-selectivity of cryogenic resonance excitation and flexibility of photoionization. We achieve an overall fidelity > 95% for the single-shot readout of an NV center electron spin in the presence of high strain and fast spin-flip process. With further improvements, this technique has the potential to achieve spin readout fidelity exceeding the fault-tolerant threshold, and may also find applications on integrated optoelectronic devices.
Abstract High fidelity single-shot readout of qubits is a crucial component for fault-tolerant quantum computing and scalable quantum networks. In recent years, the nitrogen-vacancy (NV) center in diamond has risen as a leading platform for the above applications. The current single-shot readout of the NV electron spin relies on resonance fluorescence method at cryogenic temperature. However, the spin-flip process interrupts the optical cycling transition, therefore, limits the readout fidelity. Here, we introduce a spin-to-charge conversion method assisted by near-infrared (NIR) light to suppress the spin-flip error. This method leverages high spin-selectivity of cryogenic resonance excitation and flexibility of photoionization. We achieve an overall fidelity > 95% for the single-shot readout of an NV center electron spin in the presence of high strain and fast spin-flip process. With further improvements, this technique has the potential to achieve spin readout fidelity exceeding the fault-tolerant threshold, and may also find applications on integrated optoelectronic devices.
The nitrogen-vacancy (NV) center in diamond is one of the advanced candidates for solid-state quantum computing at room temperature and has proven to be competitive in terms of gate fidelity and the availability of quantum error correction codes. Ambient solid-state qubits may therefore provide quantum computing architectures as an alternative to current solutions. The NV center has an associated electronic spin that is conventionally read out via photoluminescence. As an alternative, the electrical readout is not limited by the confocal resolution of quantum microscopes, which is required in the development of NV-based quantum processors to establish a scalable individual single-spin readout on the order of a few nanometers (necessary for strong dipole-dipole coupling). In this work, the performance of photoelectric readout versus traditional optical readout is investigated to perform Quantum State Tomography measurements on a single NV center. A state fidelity of 0.995 ±\pm± 0.006 is achieved using photoelectrical spin-state readout for state reconstruction, comparable to simultaneous optical measurements. We report photocurrent signal delays, which significantly slow down the photocurrent tomography. We develop a model describing their origin, and propose strategies for their mitigation.
The negatively charged tin-vacancy center in diamond ( SnV − ) is an emerging platform for building the next generation of long-distance quantum networks. This is due to the SnV − ’s favorable optical and spin properties including bright emission, insensitivity to electronic noise, and long spin coherence times at temperatures above 1 K. Here, we demonstrate measurement of a single SnV − electronic spin with a single-shot readout fidelity of 87.4%, which can be further improved to 98.5% by conditioning on multiple readouts. In the process, we develop understanding of the relationship between strain, magnetic field, spin readout, and microwave spin control. We show that high-fidelity readout is compatible with rapid microwave spin control, demonstrating a favorable parameter regime for use of the SnV − center as a high-quality spin-photon interface. Finally, we use weak quantum measurement to study measurement-induced dephasing; this illuminates the fundamental interplay between measurement and decoherence in quantum mechanics, and provides a universal method to characterize the efficiency of color-center spin readout. Taken together, these results overcome an important hurdle in the development of the SnV − -based quantum technologies and, in the process, develop techniques and understanding broadly applicable to the study of solid-state quantum emitters. Published by the American Physical Society 2024