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Nature Electronics

Single-shot in situ readout of a spin qubit unit cell

Pierre Hamonic, Mathieu Toubeix, G. Haas, Jayshankar Nath, Matthieu Dartiailh, Biel Martínez, Benoît Bertrand, Heimanu Niebojewski, M. Vinet, Christopher Bäuerle, Franck Balestro, Tristan Meunier, Matias Urdampilleta

Published Jun 17, 2026• 0 citations
Publisher

Abstract

Abstract Spin qubits based on semiconductor quantum dots can offer high coherence times and gate fidelities, and are a potential platform for quantum computation. However, scaling up the number of qubits to the level required for fault-tolerant quantum computing is challenging and will require single-shot, low-footprint qubit readout. Here we report single-shot readout of a spin qubit unit cell using in situ dispersive readout. Our compact, foundry-fabricated unit cell is composed of two electron spins with a controllable exchange interaction, and with it we demonstrate initialization, single-shot readout and a two-electron entangling gate. From exchange oscillations, we extract a spin visibility of 80.7(8)% in the coherent control of a qubit, despite a relatively small lever arm to the resonator gate (less than 0.15(5) eV V −1 ). We show that the unit cell can be operated at up to 1 K with low charge noise levels, extracted using free induction decay.

DOI
10.1038/s41928-026-01654-9

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•Jan 27, 2021•0 citations
Abstract Spin qubits based on semiconductor quantum dots can offer high coherence times and gate fidelities, and are a potential platform for quantum computation. However, scaling up the number of qubits to the level required for fault-tolerant quantum computing is challenging and will require single-shot, low-footprint qubit readout. Here we report single-shot readout of a spin qubit unit cell using in situ dispersive readout. Our compact, foundry-fabricated unit cell is composed of two electron spins with a controllable exchange interaction, and with it we demonstrate initialization, single-shot readout and a two-electron entangling gate. From exchange oscillations, we extract a spin visibility of 80.7(8)% in the coherent control of a qubit, despite a relatively small lever arm to the resonator gate (less than 0.15(5) eV V −1 ). We show that the unit cell can be operated at up to 1 K with low charge noise levels, extracted using free induction decay.
Spin qubits based on semiconductor quantum dots are a promising prospect for quantum computation because of their high coherence times and gate fidelities. However, scaling up those structures to the numbers required by fault-tolerant quantum computing is currently hampered by a number of issues. One of the main issues is the need for single-shot low-footprint qubit readout. Here, we demonstrate the single-shot in situ measurement of a compact qubit unit-cell. The unit cell is composed of two electron spins with a controllable exchange interaction. We report initialization, single-shot readout and two-electron entangling gate. The unit cell was successfully operated at up to 1 K, with state-of-the-art charge noise levels extracted using free induction decay. With its integrated readout and high stability, this foundry fabricated qubit unit cell demonstrates strong potential for scalable quantum computing architectures.
Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we present two complementary demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor: a radio-frequency single-electron box. The sensor, despite requiring fewer electrodes than conventional detectors, performs at the state-of-the-art achieving spin read-out fidelity of 99.2% in less than 6 μμμs. We demonstrate that low-loss high-impedance resonators, highly coupled to the sensing dot, in conjunction with Josephson parametric amplification are instrumental in achieving optimal performance. We quantify the benefit of Pauli spin blockade over spin-dependent tunneling to a reservoir, as the spin-to-charge conversion mechanism in these readout schemes. Our results place dispersive charge sensing at the forefront of readout methodologies for scalable semiconductor spin-based quantum processors.
Abstract Among the many types of qubit presently being investigated for a future quantum computer, silicon spin qubits with millions of qubits on a single chip are uniquely positioned to enable quantum computing. However, it has not been clear whether the outstanding high-fidelity operations and long coherence times shown by silicon spin qubits fabricated in academic settings 1–8 can be reliably reproduced when the qubits are manufactured in a semiconductor foundry 9–11 . Here we show precise qubit operation of silicon two-qubit devices made with standard semiconductor tooling in a 300-mm foundry environment. Of the key metrics, single- and two-qubit control fidelities exceed 99% for all four devices, and the state preparation and measurement fidelities reach up to 99.9%, as evidenced by gate set tomography. We report spin lifetime and coherence up to T 1 = 9.5 s, T2∗=40.6 μs{T}_{2}^{* }=40.6\,{\rm{\mu }}{\rm{s}}T2∗​=40.6μs T 2 * = 40.6 μ s and T2Hahn=1.9 ms{T}_{2}^{{\rm{Hahn}}}=1.9\,{\rm{ms}}T2Hahn​=1.9ms T 2 Hahn = 1.9 ms . We determine that residual nuclear spin-carrying isotopes contribute substantially to operational errors, identifying further isotopic purification as a clear pathway to even higher performance.
Spin qubits in gate-defined semiconductor quantum dots are a promising platform for realising a scalable quantum computer. This platform encodes quantum information into the intrinsic angular momentum (spin) of individual electrons or holes. In particular, hole spins in quantum dots enable the possibility of all-electrical spin control due to their intrinsic spin-orbit coupling. One important criterion of a quantum computer is the ability to reliably read out the state of the qubit. This is done by mapping spin information to the charge degree of freedom, combined with a method for charge detection. Charge detection can be facilitated by coupling a resonator directly to the quantum dot gate or to a charge sensor and measuring the resonator's phase or amplitude response. In this thesis, we describe a set of experiments relating to the implementation of hole spin qubit readout with superconducting resonators. First, we study gate-based charge sensing in a Si fin field-effect transistor (finFET) device using a superconducting NbN nanowire resonator. We find that the resonator amplifies capacitive crosstalk when electrical control pulses are applied to gate electrodes in this device. This occurs whenever a spectral component of qubit control pulses overlaps with the resonance frequency, which we show may occur for both baseband and radio-frequency (RF) drive signals. We quantify this crosstalk in a transport-based method, and attribute its source to the capacitance between the bondpads of neighbouring gate electrodes. In a second experiment, we use an RF charge sensor with the same nanowire technology to read out hole spin qubits formed in the quantum well of a Ge/SiGe heterostructure. A screening layer approach is used to facilitate RF matching due to large RF dissipation found in the heterostructure. We implement a double-latched readout scheme in this system to reduce errors arising from both spin and charge decay during readout. The spin-to-charge conversion process and its dependence on magnetic field orientation is studied. Spin and charge decay processes arising after spin-to-charge conversion are mitigated by choosing an optimal working point for the field orientation, field amplitude and readout pulse times. By doing so, we achieve an average single-shot state-preparation-and-measurement fidelity of 97%, primarily bounded by imperfect state preparation and limited signal-to-noise ratio. Finally, we study coplanar waveguide resonators fabricated from NbN. We investigate the feasibility of integrating this type of resonator onto the same chip as the Si finFET quantum dots. We then develop a novel resonator readout technique by the interference of two microwave sidebands. We demonstrate the insensitivity of this technique to common-mode phase and amplitude noise both theoretically and experimentally. This technique is then used to study resonator noise arising from two-level system defects. These results highlight both the practical constraints and the potential for achieving high readout fidelities using resonator-based hole spin qubit readout. This work establishes a blueprint for mitigating resonator-induced crosstalk and enabling high-fidelity readout in lossy materials by incorporating a screening layer.
Taking the excess electron spin in a unit cell of semiconductor multiple quantum-dot structure as a qubit, we can implement scalable quantum computation without resorting to spin-spin interactions. The technique of single electron tunnelings and the structure of quantum-dot cellular automata (QCA) are used to create a charge entangled state of two electrons which is then converted into spin entanglement states by using single spin rotations. Deterministic two-qubit quantum gates can also be manipulated using only single spin rotations with help of QCA. A single-short read-out of spin states can be realized by coupling the unit cell to a quantum point contact.
This dissertation describes a set of experiments with the goal of creating a super-conductor-semiconductor hybrid circuit quantum electrodynamics architecture with single electron spins. Single spins in silicon quantum dots have emerged as attractive qubits for quantum computation. However, how to scale up spin qubit systems remains an open question. The hybrid architecture considered here could provide a route to realizing large networks of quantum dot–based spin qubit registers. The first experiment in this thesis is aimed at achieving strong coupling between a single electron spin and a single microwave photon. The electron is trapped in a gate-defined double quantum dot in a Si/SiGe heterostructure and the photon is stored in an on-chip superconducting high-impedance NbTiN cavity. The photon is coupled directly to the electron charge, and indirectly to the electron spin, mediated through a synthetic spin-orbit field. We observe a vacuum Rabi splitting that depends on the spin-charge hybridization. The ratio of spin-photon coupling strength to decoherence rates of the spin and cavity combined is larger than unity, confirming the strong coupling regime has been reached. In addition, we find an optimal degree of spin-charge hybridization for which this ratio is maximized. The demonstration of strong spin-photon coupling not only opens a new range of physics experiments, but fulfills also a crucial requirement for coupling spin qubits at a distance via a cavity. The second experiment is focused on spin readout with the on-chip cavity. Instead of the direct dispersive readout of a single spin, we use the cavity to detect whether the electron is allowed to tunnel between the two dots or not. We benchmark the charge sensitivity and bandwidth of the detector and find that rapid detection of the electron charge with high SNR is possible. In the two-electron regime, electron tunneling is contingent on the total spin state (Pauli spin blockade). This spin-to-charge conversion scheme enables single-shot detection of singlet states with high-fidelity. The demonstration of single-shot spin readout with a cavity is an essential step towards readout in dense spin qubit arrays, such as the crossbar network, where it is not possible to integrate electrometers and accompanying reservoirs adjacent to the qubit dots. In the third experiment, we develop on-chip microwave filters to suppress microwave photon leakage from the cavity through the gate electrodes that are necessary to form quantum dots. We introduce a new cavity design that is compatible with long-distance connectivity between spins, but is also more susceptible to microwave leakage. We test and compare two low-pass filter variations in terms of performance, footprint and integrability. They use the same nanowire inductor, but different implementations of the capacitor: one with a planar interdigitated capacitor and one novel design with an overlapping thin-film capacitor. We find that both approaches are effective against microwave leakage. However, the large footprint of the interdigitated capacitor makes this solution inconvenient as the number of gate lines increases. The thin-film capacitor, with its much smaller footprint, is better suited for our devices. The final part of this dissertation contains concluding remarks and possible future directions are proposed.