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arXiv:1708.09840 · Physical review. B./Physical review. B

A silicon-based single-electron interferometer coupled to a fermionic sea

Anasua Chatterjee, Sergey N Shevchenko, Sylvain Barraud, R. M. Otxoa, Franco Nori, John J. L. Morton, M. Fernando González-Zalba

Published Jan 3, 2018• 33 citations
arXivHTMLPDF

Abstract

We study Landau-Zener-St\"uckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterize the coherent charge-qubit dynamics in the strong-driving regime. The device is realized within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the system in a continuous nondemolition manner by measuring the dispersive response of a high-frequency electrical resonator coupled to the quantum system via the gate. By performing multiple fast passages around the qubit avoided crossing, we observe a multipassage LZSM interferometry pattern. At larger driving amplitudes, a projective measurement to an even-parity charge state is realized, showing a strong enhancement of the dispersive readout signal. At even larger driving amplitudes, two projective measurements are realized within the coherent evolution resulting in the disappearance of the interference pattern. Our results demonstrate a way to increase the state readout signal of coherent quantum systems and replicate single-electron analogs of optical interferometry within a CMOS transistor.

DOI
10.1103/physrevb.97.045405

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Bulletin of the American Physical Society•Mar 18, 2013•0 citations
We study Landau-Zener-St"uckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterize the coherent charge-qubit dynamics in the strong-driving regime. The device is realized within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the system in a continuous nondemolition manner by measuring the dispersive response of a high-frequency electrical resonator coupled to the quantum system via the gate. By performing multiple fast passages around the qubit avoided crossing, we observe a multipassage LZSM interferometry pattern. At larger driving amplitudes, a projective measurement to an even-parity charge state is realized, showing a strong enhancement of the dispersive readout signal. At even larger driving amplitudes, two projective measurements are realized within the coherent evolution resulting in the disappearance of the interference pattern. Our results demonstrate a way to increase the state readout signal of coherent quantum systems and replicate single-electron analogs of optical interferometry within a CMOS transistor.
Single-spin state evolution induced by the Landau-Zener-St\"uckelberg-Majorana (LZSM) interference in a Zeeman-spit four-level system in a periodically driven double quantum dot is studied theoretically by the Floquet stroboscopic method. An interplay between spin-conserving and spin-flip tunneling processes with the electric dipole spin resonance (EDSR) that is induced in an individual dot and enhanced by the LZSM multiple level crossings with the neighboring quantum dot is investigated as a function of the microwave (MW) frequency, driving amplitude, interdot detuning, and magnetic field. A number of special points in the parameter space are identified, out of which all three features are merged. Under this triple-crossing resonance condition, the interdot tunneling is combined with a fast spin evolution in each dot at the EDSR frequency. Harmonics of the EDSR are revealed in the spin-dependent tunneling maps versus variable magnetic field and MW frequency. The results are applicable for both electron and hole systems with strong spin-orbit interaction and may be useful for developing new time-efficient schemes of the spin control and readout in qubit devices.
Controlling coherent interaction at avoided crossings and the dynamics there is at the heart of quantum information processing. A particularly intriguing dynamics is observed in the Landau-Zener regime, where periodic passages through the avoided crossing result in an interference pattern carrying information about qubit properties. In this Letter, we demonstrate a straightforward method, based on steady-state experiments, to obtain all relevant information about a qubit, including complex environmental influences. We use a two-electron charge qubit defined in a lateral double quantum dot as test system and demonstrate a long coherence time of T2 ≃ 200 ns, which is limited by electron-phonon interaction.
We perform Landau-Zener-St\"uckelberg interferometry on a single electron GaAs charge qubit by repeatedly driving the system through an avoided crossing. We observe coherent destruction of tunneling, where periodic driving with specific amplitudes inhibits current flow. We probe the quantum dot occupation using a charge detector, observing oscillations in the qubit population resulting from the microwave driving. At a frequency of 9 GHz we observe excitation processes driven by the absorption of up to 17 photons. Simulations of the qubit occupancy are in good agreement with the experimental data.
Landau-Zener (LZ) transition has received renewed interest as an alternative approach to control single-qubit states. An LZ transition occurs when a system passes through an avoided crossing that arises from quantum mechanical coupling of two levels, taking the system to a coherent superposition of the two states. Then, multiple LZ transitions induce interference known as Landau-Zener-Stückelberg (LZS) interference whose amplitude strongly depends on the velocity or adiabaticity of the passage. Here, we study the roles of LZ transitions and LZS interference in coherent charge oscillations of a one-electron semiconductor double quantum dot by time-domain experiments using standard rectangular voltage pulses. By employing density matrix simulations, we show that, in the standard setup using rectangular pulses, even a small distortion of the pulse can give rise to LZ transitions and hence LZS interference, which significantly enhances the measured oscillation amplitude. We further show experimentally that the nature of the coherent charge oscillations changes from Rabi-type to LZS oscillations with increasing pulse distortion. Our results thus demonstrate that it is essential to take into account LZS interference for both precise control of charge qubits and correct interpretation of measurement results.
Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-transistor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large scale circuits. Here we demonstrate the integration of a single-electron charge storage CMOS quantum dot with a CMOS transistor for control of the readout via gate-based dispersive sensing using a lumped element LCLCLC resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully-depleted silicon-on-insulator technology. We obtain a charge sensitivity of δq=165 μeHz−1/2δq=165\, μe \mathrm{Hz}^{-1/2}δq=165μeHz−1/2 when the quantum dot readout is enabled by the control FET. Additionally, we observe a single-electron retention time of the order of a second when storing a single-electron charge on the quantum dot at milli-Kelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive qubit readout in CMOS technology opening the path for the development of an all-silicon quantum-classical processor.
Landau-Zener-Stuckelberg-Majorana (LZSM) physics has been exploited to coherently manipulate two-electron spin states in a GaAs double quantum dot (DQD) at a singlet (S)-triplet (T+) anti-crossing. The anti-crossing results from the hyperfine interaction with the nuclear spins of the host material [1,2]. However, the fluctuations of the nuclear spin bath result in spin dephasing within T ∗ 2 ∼ 10− 20 ns. As a consequence, the sweep through the anti-crossing would have to be performed on a timescale comparable to T ∗ 2 to achieve LZSM oscillations with 100% visibility. Moreover, the S-T+ anti-crossing is located near the (1, 1)− (2, 0) interdot charge transition, where (nl, nr) denotes the number of electrons in the left and right quantum dot. As a result the singlet state involved in the dynamics is a superpostion of (1, 1) and (2, 0) singlet states. Here we show that it is possible to increase the oscillation visibility while keeping sweep times less than T ∗ 2 using a tailored pulse with a detuning dependent level velocity. The pulse includes a slow level velocity portion that is chosen to coincide with the passage through the S-T+ anti-crossing and two fast level velocity portions. The latter minimize the time spent in regions where spin and charge degrees of freedom are entangled, which renders the qubit susceptible to charge noise. The slow level velocity portion of the pulse results in a stronger effective coupling between the spins states, which increases the oscillations visibility [3,4]. In particular, we were able to obtain a visibility of ∼ 0.5 for LZSM oscillations. This constitutes an important step towards the implementation of a Hadamard gate.