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arXiv:1611.02166 · APS

Micromachined integrated quantum circuit containing a superconducting qubit

T. Brecht, Yiwen Chu, Christopher J. Axline, Wolfgang Pfaff, Jacob Blumoff, Chou, K., Lev Krayzman, Luigi Frunzio, Robert J. Schoelkopf

Published Nov 7, 2016• 0 citations
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Abstract

We present a device demonstrating a lithographically patterned transmon integrated with a micromachined cavity resonator. Our two-cavity, one-qubit device is a multilayer microwave integrated quantum circuit (MMIQC), comprising a basic unit capable of performing circuit-QED (cQED) operations. We describe the qubit-cavity coupling mechanism of a specialized geometry using an electric field picture and a circuit model, and finally obtain specific system parameters using simulations. Fabrication of the MMIQC includes lithography, etching, and metallic bonding of silicon wafers. Superconducting wafer bonding is a critical capability that is demonstrated by a micromachined storage cavity lifetime $34.3~\mathrm{μs}$, corresponding to a quality factor of 2 million at single-photon energies. The transmon coherence times are $T_1=6.4~\mathrm{μs}$, and $T_2^{Echo}= 11.7~\mathrm{μs}$. We measure qubit-cavity dispersive coupling with rate $χ_{qμ}/2π=-1.17~$MHz, constituting a Jaynes-Cummings system with an interaction strength $g/2π=49~$MHz. With these parameters we are able to demonstrate cQED operations in the strong dispersive regime with ease. Finally, we highlight several improvements and anticipated extensions of the technology to complex MMIQCs.

DOI
10.48550/arxiv.1611.02166

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The next step in building quantum computers is to develop hardware architectures that allow scalability without sacrificing coherence. Future designs seem headed toward multilayered circuits with embedded three-dimensional structures and superconducting coatings. The authors demonstrate a multilayered integrated quantum circuit, combining a micromachined microwave cavity resonator with a superconducting qubit. They address the mechanism of coupling and its control, engineering considerations that affect coherence times, and challenges in fabrication such as superconductor bonding.
Low-loss cavities are important in building high-coherence superconducting quantum computers. Generating high-quality joints between parts is crucial for the realization of a scalable quantum computer using the circuit quantum electrodynamics (cQED) framework. In this paper, we adapt the technique of indium bump bonding to cQED to realize high-quality superconducting microwave joints between chips. We use this technique to fabricate compact superconducting cavities in the multilayer microwave integrated quantum circuit (MMIQC) architecture and achieve single photon quality factors over 300 × 106 or single-photon lifetimes approaching 5 ms. To quantify the performance of the resulting seam, we fabricate microwave stripline resonators in multiple sections connected by different numbers of bonds, resulting in a wide range of seam admittances. The measured quality factors combined with the designed seam admittances allow us to bound the conductance of the seam at gseam≥2×1010/(Ω m). Such a conductance should enable the construction of micromachined superconducting cavities with a quality factor of at least a billion. These results demonstrate the capability to construct very high-quality microwave structures within the MMIQC architecture.
Integrated Superconducting High-QQQ Seamless Cavity for Quantum Memory and Qubit Readout Applications
This work presents a novel micromachined, seamless sapphire–silicon hybrid evanescent-mode cavity architecture incorporating selectively engineered coupling channels and flux-tunable external coupling via a superconducting quantum interference device (SQUID). The proposed design enables two simulated operating states within a single device: an ultra-high- QQQ memory configuration and a high-speed readout configuration with intrinsic Purcell filtering, which is expected to enhance readout fidelity while preserving the coherence of the stored quantum information. Unlike prior 3-D and multimode cavity approaches, the design employs a distributed embedded-capacitance network that confines electric fields into ultra-low-loss dielectric regions while distributing magnetic fields to an air-filled enclosure, thus substantially reducing simulated surface and dielectric losses beyond reported architectures. Moreover, the structure employs contactless superconducting metallization between two wafers, eliminating seam losses typically observed in micromachined resonators. The designed selective field-coupling strategy enables pure magnetic coupling through the lower silicon substrate, enabling fast readout, while pure electric coupling through the upper sapphire interface ensures strong qubit–cavity interaction, without mixed-coupling artifacts. High-fidelity mixed electromagnetic and circuit-level modeling predicts an intrinsic- QQQ exceeding 10810^{8}108 at 5554.5 MHz. The flux-tunable asymmetric DC-SQUID enables a dynamic external- QQQ reconfiguration from 10910^{9}109 (memory mode) to 10410^{4}104 (readout mode). When coupled to a 6981.7 MHz transmon qubit, the architecture provides a nearly six-order-of-magnitude simulated Purcell-limited qubit lifetime improvement and achieves 66 %\%% simulated memory efficiency at 1 ms under realistic coherence assumptions. These simulated results show that the proposed seamless, capacitively engineered architecture can work as a promising, high-coherence, and rapidly reconfigurable platform for scalable superconducting quantum systems.
I discuss the design, fabrication and measurement at millikelvin-temperatures of Al/AlOx_xx​/Al Josephson junction-based transmon qubits coupled to superconducting thin-film lumped element microwave resonators made of aluminum on sapphire. The resonators had a center frequency of around 6 6\,6GHz, and a total quality factor ranging from 15,000 to 70,000 for the various devices. The area of the transmon junctions was about 150 nm×150 nm150\, \mathrm{nm} \times 150\, \mathrm{nm}150nm×150nm and with Josephson energy EJE_JEJ​ such that 10 GHz≤EJ/h≤30 10\,\text{GHz} \leq E_J / h \leq 30\,10GHz≤EJ​/h≤30GHz. The charging energy of the transmons arising mostly from the large interdigital shunt capacitance, was Ec/h≈300 E_c / h \approx 300\,Ec​/h≈300MHz. I present microwave spectroscopy of the devices in the strongly dispersive regime of circuit quantum electrodynamics. In this limit the ac Stark shift due to a single photon in the resonator is greater than the linewidth of the qubit transition. When the resonator is driven coherently using a coupler tone, the transmon spectrum reveals individual ``photon number'' peaks, each corresponding to a single additional photon in the resonator. Using a weighted average of the peak heights in the qubit spectrum, I calculated the average number of photons nˉ\bar{n}nˉ in the resonator. I also observed a nonlinear variation of nˉ\bar{n}nˉ with the applied power of the coupler tone PrfP_{rf}Prf​. I studied this nonlinearity using numerical simulations and found good qualitative agreement with data. In the absence of a coherent drive on the resonator, a thermal population of 5.474 5.474\,5.474GHz photons in the resonator, at an effective temperature of 120 120\,120mK resulted in a weak n=1n=1n=1 thermal photon peak in the qubit spectrum. In the presence of independent coupler and probe tones, the n=1n=1n=1 thermal photon peak revealed an Autler-Townes splitting. The observed effect was explained accurately using the four lowest levels of the dispersively dressed Jaynes-Cummings transmon-resonator system, and numerical simulations of the steady-state master equation for the coupled system. I also present time-domain measurements on transmons coupled to lumped-element resonators. From T1T_1T1​ and Rabi oscillation measurements, I found that my early transmon devices (called design LEv5) had lifetimes (T1∼1 μT_1 \sim 1\,\muT1​∼1μs) limited by strong coupling to the 50 Ω50\,\Omega50Ω transmission line. This coupling was characterized by the the rate of change of the Rabi oscillation frequency with the change in the drive voltage (dfRabi /dV\mathrm{d}f_{Rabi}\, / \mathrm{d}VdfRabi​/dV) -- also termed the Rabi coupling to the drive. I studied the design of the transmon-resonator system using circuit analysis and microwave simulations with the aim being to reduce the Rabi coupling to the drive. By increasing the resonance frequency of the resonator ωr/2π\omega_r/2\piωr​/2π from 5.4 \,GHz to 7.2 \,GHz, lowering the coupling of the resonator to the transmission line and thereby increasing the external quality factor QeQ_eQe​ from 20,000 to 70,000, and reducing the transmon-resonator coupling g/2πg/2\pig/2π from 70 \,MHz to 40 \,MHz, I reduced the Rabi coupling to the drive by an order of magnitude (∼\sim∼ factor of 20). The T1∼4 μT_1 \sim 4\,\muT1​∼4μs of devices in the new design (LEv6) was longer than that of the early devices, but still much shorter than the lifetimes predicted from Rabi coupling, suggesting the presence of alternative sources of noise causing qubit relaxation. Microwave simulations and circuit analysis in the presence of a dielectric loss tangent tan⁡δ≃5×10−6\tan \delta \simeq 5\times10^{-6}tanδ≃5×10−6 agree reasonably well with the measured T1T_1T1​ values, suggesting that surface dielectric loss may be causing relaxation of transmons in the new designs.
The remarkable advances of quantum computation technology with superconducting qubits based on circuit quantum electrodynamics (QED) architecture have been achieved by improving control, protection and measurement of the quantum states at the same time. At the heart of all these quantum operations, the significant enhancement of the qubit coherence time during the last decades was the key. Even after all these advances, the coherence and relaxation time of superconducting qubits still requires further improvements toward fault-tolerant quantum computation. Here, we report our observation of a strongly enhanced lifetime of an in-situ tunable superconducting transmon qubit on a silicon substrate that is embedded in a three-dimensional copper cavity. We measured a lifetime of the qubit of up to 84 µs, which is the best reported value of an in-situ tunable transmon on a silicon substrate. In our experiment, the in-situ frequency tunability over a broad range enabled the Purcell factor to be controlled continuously by detuning the qubit frequency against the resonator frequency in the strong dispersive regime. The silicon substrate has its own importance because the substrate should be fully compatible with the conventional semiconductor processes so that scalability and multi-chip module capability are guaranteed. In order to control the Purcell factor with another parameter, we displaced the qubit position in the cavity and observed a longer relaxation time with a smaller coupling coefficient. We believe that this systematic study and the control technique of the Purcell effect in the circuit QED design, together with minimizing the microwave photon loss through an improvement of the fabrication, will contribute to the realization of a practical large-scale quantum computer based on superconducting qubit technology.