Abstract Integration with conventional electronics offers a straightforward and economical approach to upgrading existing superconducting technologies, such as scaling up superconducting detectors into large arrays and combining single flux quantum (SFQ) digital circuits with semiconductor logic gates and memories. However, direct output signals from superconducting devices (e.g., Josephson junctions) are usually not compatible with the input requirements of conventional devices (e.g., transistors). Here, we demonstrate the use of a single three-terminal superconducting-nanowire device, called the nanocryotron (nTron), as a digital comparator to combine SFQ circuits with mature semiconductor circuits such as complementary metal oxide semiconductor (CMOS) circuits. Since SFQ circuits can digitize output signals from general superconducting devices and CMOS circuits can interface existing CMOS-compatible electronics, our results demonstrate the feasibility of a general architecture that uses an nTron as an interface to realize a ‘super-hybrid’ system consisting of superconducting detectors, superconducting quantum electronics, CMOS logic gates and memories, and other conventional electronics.
Abstract Integration with conventional electronics offers a straightforward and economical approach to upgrading existing superconducting technologies, such as scaling up superconducting detectors into large arrays and combining single flux quantum (SFQ) digital circuits with semiconductor logic gates and memories. However, direct output signals from superconducting devices (e.g., Josephson junctions) are usually not compatible with the input requirements of conventional devices (e.g., transistors). Here, we demonstrate the use of a single three-terminal superconducting-nanowire device, called the nanocryotron (nTron), as a digital comparator to combine SFQ circuits with mature semiconductor circuits such as complementary metal oxide semiconductor (CMOS) circuits. Since SFQ circuits can digitize output signals from general superconducting devices and CMOS circuits can interface existing CMOS-compatible electronics, our results demonstrate the feasibility of a general architecture that uses an nTron as an interface to realize a ‘super-hybrid’ system consisting of superconducting detectors, superconducting quantum electronics, CMOS logic gates and memories, and other conventional electronics.
Superconducting electronics based on Josephson junctions are used to sense and process electronic signals with minimal loss; however, they are ultrasensitive to magnetic fields, limited in their amplification capabilities, and difficult to manufacture. We have developed a 3-terminal, nanowire-based superconducting electrothermal device which has no Josephson junctions. This device, which we call the nanocryotron, can be patterned from a single thin film of superconducting material with conventional electron-beam lithography. The nanocryotron has a demonstrated gain of >20, can drive impedances of 100 kΩ, and operates in typical ambient magnetic fields. We have additionally applied it both as a digital logic element in a half-adder circuit, and as a digital amplifier for superconducting nanowire single-photon detectors pulses. The nanocryotron has immediate applications in classical and quantum communications, photon sensing, and astronomy, and its input characteristics are suitable for integration with existing superconducting technologies.
Superconducting digital circuits are promising technologies that can overcome bottlenecks in both classical and quantum computation due to their ultra-high operation speed and extremely low power dissipation. Superconducting nanowire cryotrons (nTrons) are emerging as one type of superconductor switching devices, offering advantages complementary to conventional Josephson junctions. Achieving monolithic integration of a reasonable number of nTrons into a functional digital circuit is a crucial step to extend its application. In this study, we constructed a monolithic integrated nTron-based binary encoder, which includes input fanout circuits, on-chip biasing, combinational logic routing and multi-gate nTrons. This represents a monolithic nTron digital circuit comprising 137 nTron gates, 424 resistors, 274 inductors, and 164 vias developed using a two-superconducting-layer fabrication process. The performance of this monolithic nTron encoder surpasses that of our previously demonstrated circuit with discrete nTron components. The maximum bias margin is 28% for the fanout circuit and 60% for the multi-gate nTron when using a signal generator, while the minimum timing jitter is 40 ps. The total power dissipation mainly from biasing resistors is 19.6 μW, making it more power efficient than RSFQ encoders. The encoder is then packaged and connected with a superconducting nanowire single-photon detector array for demonstrating its function of addressing pixel locations. Compared to the conventional readout, the nTron encoder shows a minimum readout error rate lower than 10−4 and reduces the readout RF lines from 15 to 4. The design and fabrication technologies could enrich integrated nTron digital circuits beyond current limits and promote their applications in classical and quantum systems.
We present hybridization of Josephson, CMOS, and nanocryotron (nTron) devices for a large-scale cryogenic memory application. The memory system proposed here is dynamic random access memory composed of address decoders based on an energy-efficient rapid single-flux-quantum logic, nTron line drivers, a CMOS memory cell array, and Josephson current sensors. Because drivers with voltage amplification and decoders are the major causes of power dissipation in the conventional Josephson-CMOS hybrid memory, drastic reduction in power consumption is expected. We show estimates that the power consumption of a 16-Mb memory is reduced to 1.36-2.77 mW, approximately 1/12 of the conventional Josephson-CMOS hybrid memory, and the access time is 0.78 ns for a read operation, when we assume a 65-nm CMOS process and a 1.0-μm Nb/AlOx/Nb process. In the preliminary experiment, we fabricated nTrons using NbTiN thin film that are suitable for hybrid memory implementation, and measured with eight-transistor static random access memory cells fabricated using the Rohm 0.18-μm CMOS process. We successfully triggered the nTron into the normal state, and observed output voltage of ~0.1 V at 13.5 K. The experimental results support the potential of the hybrid memory using NbTiN nTrons.
Superconducting devices have enabled breakthrough performance in quantum sensing and ultralow-power computing. Nevertheless, the need for a cryoelectronics platform that can interface superconductor electronics with complementary metal-oxide-semiconductor (CMOS) devices has become increasingly evident in many cutting-edge applications. In this work, we present a three-terminal micrometer-wide superconducting-wire-based cryotron switch (wTron), fabricated using photolithography, that can directly interface with CMOS electronics. The wTron features an output impedance exceeding $1\phantom{\rule{0.2em}{0ex}}\mathrm{k}\mathrm{\ensuremath{\Omega}}$ and exhibits reduced sensitivity to ambient magnetic noise, similar to its nanoscale predecessor, the nanocryotron. In addition, its micrometer-wide wires support switching currents in the milliamp range, making it well suited to driving current-hungry resistive loads and highly capacitive CMOS loads. We demonstrate this capability by using the wTron to drive room-temperature CMOS electronics, including a light-emitting diode and a metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate capacitance of 500 pF. We then examine the optimal design parameters required for wTrons to drive CMOS loads, such as MOSFETs, high-electron mobility transistors, and electro-optic modulators. Furthermore, to demonstrate the foundry readiness of the wTron, we fabricate wTrons using MIT Lincoln Laboratory's SFQ5ee superconducting process and characterize their switching behavior. Our work shows that the wTron will facilitate the interface between superconductor electronics and CMOS devices, thereby paving the way for the development of foundry-compatible cryoelectronic ecosystems to advance next-generation computing and quantum applications.
Superconducting (SC) electronics (SCE) is one of the major requirements to develop a large-scale practical quantum computing system. (Figs. 1(a)) [1]. Currently, a room temperature conventional computer is used as the control processor which requires a huge number of lossy interconnects to connect with the qubits placed at a few millikelvin temperatures. This, in turn, limits the scalability of the quantum computing system up to hundreds of qubits which is not enough to achieve the full potential [2]. Therefore, along with a suitable cryogenic memory, a cryogenic (preferably superconducting) control processor is required to develop a quantum computing system with thousands of qubits. Moreover, SCE offers ultra-fast (hundreds of gigahertz) and highly energy efficient (sub attojoule/bit) performance [3]. Therefore, SCE is projected to achieve the department of energy (DOE) exascale goal which the conventional supercomputers failed to achieve (Fig. 1(b)) [4]. However, Josephson junction-based SC circuits suffer from limited integration density due to flux trapping, difficulty in driving large impedances, fanning out digital signals, and operating in noisy environments [5]. To address these existing issues, here, we present a novel reconfigurable SC logic circuit using a nano-cryotron (nTron) that can perform 1-input copy, 2-input AND and OR, and 3-input majority logic functionalities. This work can enable the implementation of highly scalable and energy-efficient SC processor since the use of only one device. To achieve the reconfigurable nature of the logic circuit, we utilize the multi-gate switching of nTron.
Scalable superconducting nanowire single photon detector (SNSPDs) arrays require cryogenic digital circuits for multiplexing the output detection pulses. Among existing superconducting digital devices, superconducting nanowire cryotron (nTron) is a three-terminal device with an ultra-compact size, which is promising for large scale monolithic integration. In this report, in order to evaluate the potential and possibility of using nTrons for reading and digitizing SNSPD signals, we characterized the grey zone, speed, timing jitter and power dissipation of a proper designed nTron. With a DC bias on the gate, the nTron can be triggered by a few μA high and nanoseconds wide input signal, showing the nTron was capable of reading an SNSPD pulse at the same signal level. The timing jitter depended on the input signal level. For a 20 μA high and 5 ns wide input pulse, the timing jitter was 33.3 ps, while a typical SNSPD's jitter was around 50 ps. With removing the serial inductors and operating it in an AC bias mode. The nTron was demonstrated to be operated at a clock frequency of 615.4 MHz, which was faster than the maximum counting rate of a typical SNSPD. In additional, with a 50 Ω bias resistor and biased at 17.6 μA, the nTron had a total power dissipation of 19.7 nW. Although RSFQ circuits are faster than nTrons, for reading SNSPD or other detector arrays that demands less operation speed, our results suggest a digital circuit made from nTrons could be another promising alternative.