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arXiv:1602.07659 · Applied Physics Letters

Experimental investigation of the detection mechanism in WSi nanowire superconducting single photon detectors

Rosalinda Gaudio, Jelmer J. Renema, Zili Zhou, Varun B. Verma, Adriana E. Lita, Jeffrey Shainline, Martin J. Stevens, Richard P. Mirin, Sae Woo Nam, Martin P. van Exter, Michiel J. A. de Dood, Andrea Fiore

Published Jul 18, 2016• 18 citations
arXivHTMLPDF

Abstract

We use quantum detector tomography to investigate the detection mechanism in WSi nanowire superconducting single photon detectors. To this purpose, we fabricated a 250 nm wide and 250 nm long WSi nanowire and measured its response to impinging photons with wavelengths ranging from λ = 900 nm to λ = 1650 nm. Tomographic measurements show that the detector response depends on the total excitation energy only. Moreover, for total absorbed energies >0.8 eV the current–energy relation is linear, similar to what was observed in NbN nanowires, whereas the current–energy relation deviates from linear behavior for total energies below 0.8 eV.

DOI
10.1063/1.4958687

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We use quantum detector tomography to investigate the detection mechanism in WSi nanowire superconducting single photon detectors. To this purpose, we fabricated a 250 nm wide and 250 nm long WSi nanowire and measured its response to impinging photons with wavelengths ranging from λ = 900 nm to λ = 1650 nm. Tomographic measurements show that the detector response depends on the total excitation energy only. Moreover, for total absorbed energies >0.8 eV the current–energy relation is linear, similar to what was observed in NbN nanowires, whereas the current–energy relation deviates from linear behavior for total energies below 0.8 eV.
We use quantum detector tomography to investigate the detection mechanism in WSi nanowire superconducting single photon detectors (SSPDs). To this purpose, we fabricated a 250nm wide and 250nm long WSi nanowire and measured its response to impinging photons with wavelengths ranging from λ\lambdaλ = 900 nm to λ\lambdaλ = 1650 nm. Tomographic measurements show that the detector response depends on the total excitation energy only. Moreover, for energies Et > 0.8eV the current energy relation is linear, similar to what was observed in NbN nanowires, whereas the current-energy relation deviates from linear behaviour for total energies below 0.8eV.
Superconducting single photon detectors consist of a narrow and thin wire of superconductor and can detect single photons with high efficiency and high speed. Simultaneous optimization of the detection efficiency and detector response time is difficult because the response time is set by the dimensions of the wire (cross section and length) while the detection efficiency is determined by both the internal detection mechanism and the dimensions of the wire. Wider and shorter wires are easier to fabricate, are more robust and lead to shorter detector reset time, but are generally less efficient. Experiments employing detector tomography provide important insights into the photon detection mechanism and indicate a detection mechanism where the edges of the wire are more efficient. This leads to a position dependent local detection efficiency that can be explained in the context of a photon-assisted-vortex-entry model and predicts an optimum wire width ~70 nm. A 50 nm wide silicon nanowire deposited on top of a 150 nm wide NbN nanowire directs light at 1550 nm wavelength to the edges and improves both the total absorption efficiency and the internal detection efficiency of the wire. The total absorption efficiency can be enhanced by 30% while the internal detection efficiency is increased by 70%. Assuming that the wire covers a similar area the detector response time is reduced 4-fold compared to the standard design using a 70 nm wide wire.
We report an experimental test of the photodetection mechanism in a nanowire superconducting single photon detector. Detector tomography allows us to explore the 0.8-8 eV energy range via multiphoton excitations. High accuracy results enable a detailed comparison of the experimental data with theories for the mechanism of photon detection. We show that the temperature dependence of the efficiency of the superconducting single photon detector is determined not by the critical current but by the current associated with vortex unbinding. We find that both quasiparticle diffusion and vortices play a role in the detection event.
Using detector tomography, we investigate the detection mechanism in NbN-based superconducting single photon detectors (SSPDs). We demonstrate that the detection probability uniquely depends on a particular linear combination of bias current and energy, for a large variation of bias currents, input energies and detection probabilities, producing a universal detection curve. We obtain this result by studying multiphoton excitations in a nanodetector with a sparsity-based tomographic method that allows factoring out of the optical absorption. We discuss the implication of our model system for the understanding of meander-type SSPDs.
In a recent publication we have proposed a numerical model that describes the detection process of optical photons in superconducting nanowire single-photon detectors (SNSPD). Here, we review this model and present a significant improvement that allows us to calculate more accurate current distributions for the inhomogeneous quasi-particle densities occurring after photon absorption. With this new algorithm we explore the detector response in standard NbN SNSPD for photons absorbed off-center and for 2-photon processes. We also discuss the outstanding performance of SNSPD based on WSi. Our numerical results indicate a different detection mechanism in WSi than in NbN or similar materials.
Abstract Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm.