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arXiv:1602.03179 · Physical Review A

Intrinsic errors in transporting a single-spin qubit through a double quantum dot

Xiao Li, Edwin Barnes, J. P. Kestner, S. Das Sarma

Published Jul 6, 2017• 21 citations
arXivHTMLPDF

Abstract

Coherent spatial transport or shuttling of a single electron spin through semiconductor nanostructures is an important ingredient in many spintronic and quantum computing applications. In this work we analyze the possible errors in solid-state quantum computation due to leakage in transporting a single-spin qubit through a semiconductor double quantum dot. In particular, we consider three possible sources of leakage errors associated with such transport: finite ramping times, spin-dependent tunneling rates between quantum dots induced by finite spin-orbit couplings, and the presence of multiple valley states. In each case we present quantitative estimates of the leakage errors, and discuss how they can be minimized. The emphasis of this work is on how to deal with the errors intrinsic to the ideal semiconductor structure, such as leakage due to spin-orbit couplings, rather than on errors due to defects or noise sources. In particular, we show that in order to minimize leakage errors induced by spin-dependent tunnelings, it is necessary to apply pulses to perform certain carefully designed spin rotations. We further develop a formalism that allows one to systematically derive constraints on the pulse shapes and present a few examples to highlight the advantage of such an approach.

DOI
10.1103/physreva.96.012309

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•Jan 1, 2015•0 citations
Coherent spatial transport or shuttling of a single electron spin through semiconductor nanostructures is an important ingredient in many spintronic and quantum computing applications. In this work we analyze the possible errors in solid-state quantum computation due to leakage in transporting a single-spin qubit through a semiconductor double quantum dot. In particular, we consider three possible sources of leakage errors associated with such transport: finite ramping times, spin-dependent tunneling rates between quantum dots induced by finite spin-orbit couplings, and the presence of multiple valley states. In each case we present quantitative estimates of the leakage errors, and discuss how they can be minimized. The emphasis of this work is on how to deal with the errors intrinsic to the ideal semiconductor structure, such as leakage due to spin-orbit couplings, rather than on errors due to defects or noise sources. In particular, we show that in order to minimize leakage errors induced by spin-dependent tunnelings, it is necessary to apply pulses to perform certain carefully designed spin rotations. We further develop a formalism that allows one to systematically derive constraints on the pulse shapes and present a few examples to highlight the advantage of such an approach.
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of the existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit's energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced spin-orbit interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a comodeling framework for double quantum dot (DQD) devices and their charge noise environments. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods, and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two-qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97>97%>97 in the simulated Si-MOS devices at a typical TLF density of ${10}^{11}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 9191%91 in the presence of the same density of TLFs. We further investigate the one- and two-qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities, which can compromise the device yields in scaled qubit technologies.
We present a numerically-optimized multipulse framework for the quantum control of a single-electron double quantum dot qubit. Our framework defines a set of pulse sequences, necessary for the manipulation of the ideal qubit basis, that avoids errors associated with excitations outside the computational subspace. A novel control scheme manipulates the qubit adiabatically, while also retaining high speed and ability to perform a general single-qubit rotation. This basis generates spatially localized logical qubit states, making readout straightforward. We consider experimentally realistic semiconductor qubits with finite pulse rise and fall times and determine the fastest pulse sequence yielding the highest fidelity. We show that our protocol leads to improved control of a qubit. We present simulations of a double quantum dot in a semiconductor device to visualize and verify our protocol. These results can be generalized to other physical systems since they depend only on pulse rise and fall times and the energy gap between the two lowest eigenstates.
A single electron spin in a double quantum dot in a magnetic field is considered in terms of a four-level system. By describing the electron motion between the potential minima via spin-conserving tunneling and spin flip caused by a spin–orbit coupling, we inversely engineer faster-than-adiabatic state manipulation operations based on the geometry of four-dimensional rotations. In particular, we show how to transport a qubit among the quantum dots performing simultaneously required spin rotations.
Superconducting resonator couplers will likely become an essential component in modular semiconductor quantum dot (QD) spin qubit processors, as they help alleviate crosstalk and wiring issues as the number of qubits increases. Here, we focus on a three-qubit system composed of two modules: a two-electron triple QD resonator coupled to a single-electron double QD. Using a combination of analytical techniques and numerical results, we derive an effective Hamiltonian that describes the three-qubit logical subspace and show that it accurately captures the dynamics of the system. We examine the performance of short-range and long-range entangling gates, revealing the effect of a spectator qubit in reducing the gate fidelities in both cases. We further study the competition between nonadiabatic errors and spectator-associated errors in short-range operations and quantify their relative importance across practical parameter ranges for short and long gate times. We also analyze the impact of charge noise together with residual coupling to the spectator qubit on intermodule entangling gates and find that for current experimental settings, leakage errors are the main source of infidelities in these operations. Our results help pave the way toward identifying optimal modular QD architectures for quantum information processing on semiconductor chips. Published by the American Physical Society 2024
In this paper, we investigate how to achieve high-fidelity electron spin transport in a GaAs double quantum dot. Our study examines fidelity loss in spin transport from multiple perspectives. We first study incoherent fidelity loss due to hyperfine and spin-orbit interaction. We calculate fidelity loss due to the random Overhauser field from hyperfine interaction, and spin relaxation rate due to spin-orbit interaction in a wide range of experimental parameters with a focus on the occurrence of spin hot spots. A safe parameter regime is identified in order to avoid these spin hot spots. We then analyze systematic errors due to non-adiabatic transitions in the Landau-Zener process of sweeping the interdot detuning, and propose a scheme to take advantage of possible Landau-Zener-Stückelberg interference to achieve high-fidelity spin transport at a higher speed. At last, we study another systematic error caused by the correction to the electron g-factor from the double dot potential, which can lead to a notable phase error. In all, our results should provide a useful guidance for future experiments on coherent electron spin transport.
This thesis addresses the concept of quantum computing with semiconductor quantum dots. The basic unit of a quantum computer is a quantum mechanical two-level system, the so-called quantum bit (qubit). The qubit can be defined as the spin of an electron confined in a quantum dot or as a two-dimensional subspace of the Hilbert space for several spins. Some semiconductors have several minima in their conduction band, socalled valleys. A two-dimensional valley degree of freedom can also be considered as a qubit. In this thesis, quantum registers storing spin as well as valley qubits are described theoretically. Virtual hopping yields an exchange interaction between neighboring quantum dots, which reduces the energy of antisymmetric spin-valley states according to the Pauli principle. Considering the spin and the valley degrees of freedom of two electrons in neighboring quantum dots as qubits, the exchange interaction is a four-qubit interaction. In this thesis, it will be shown that it is, nevertheless, possible to generate a universal two-qubit gate for spin qubits or for valley qubits by combining the exchange interaction and individual single-qubit gates. The exchange interaction in this two-electron double quantum dot directly provides a universal two-qubit gate for one spin and one valley qubit as well. For this, the qubits are defined as suitable subspaces, spanned by the singlet and one triplet state of the spin and the valley states, respectively, Using those gates, arbitrary quantum operations can be performed for single-spin and single-valley qubits in the same quantum register, where in one double quantum dot the quantum states are restricted to the singlet-triplet subspace. While in this register single-spin and single-valley rotations are required, these gates are dispensable in a quantum register storing spin and valley singlet-triplet qubits. The single-qubit operations, in this case, can be provided by the exchange interaction and a gradient in the energy splitting of spin and valley states when the spin qubit is stored in a double quantum dot with spin degrees of freedom only and when the spin states in the double quantum dot which stores the valley qubit are polarized. For providing the two-qubit gate, the spin and the valley qubits need to be stored in the same double quantum dot. The crucial task for this register is to interchange the spin of a spin-only and a spin-valley quantum dot in order to switch between the single-qubit and the two-qubit operation mode. This interchanging of the spin can be achieved by a valley-depending virtual hopping between the quantum dots. Furthermore, echo sequences for a so-called exchange-only qubit are considered. An exchange-only qubit is defined as a subspace in a system of three electron spins in a triple quantum dot. An inhomogeneous magnetic field, which may be caused by nuclear spins in the semiconductor, can lead to decoherence and leakage, i.e., the state might leave the qubit subspace. Suppressing this effect by an echo sequence which consists of pulses interchanging neighboring spin states, so-called SWAP gates, was proposed. Controllability over these quantum operations is provided via the exchange interaction. In this thesis, the performance of different such sequences is investigated. The analysis shows that optimization strategies developed for single spin echoes can be adapted for the three spin system. The echo sequences can be different in their order of applied SWAP gates interchanging the spins in the first and second dots or in the second and third dots. The noise suppression performance depends slightly on this order of SWAP gates. For two spins in a double quantum dot a scheme for quantum state tomography is presented. The corresponding measurement operators are constructed from a set of mutually unbiased bases of the four-dimensional two-qubit Hilbert space. These measurements are represented by short sequences of no more than three elementary quantum gates and projective measurements by the well-established spin-to-charge conversion.