Diamond is a proven solid-state platform for spin-based quantum technology.The nitrogen-vacancy center in diamond has been used to realize small-scale quantum information processing and quantum sensing under ambient conditions.A major barrier in the development of large-scale quantum information processing in diamond is the connection of nitrogen-vacancy spin registers by a quantum bus at room temperature.Given that diamond is expected to be an ideal spin transport material, the coherent transport of spin directly between the spin registers offers a potential solution.Yet, there has been no demonstration of spin transport in diamond due to difficulties in achieving spin injection and detection via conventional methods.Here, we exploit detailed knowledge of the paramagnetic defects in diamond to identify novel mechanisms to photoionize, transport, and capture spin-polarized electrons in diamond at room temperature.Having identified these mechanisms, we explore how they may be combined to realize an on-chip spin quantum bus.
Diamond is a proven solid-state platform for spin-based quantum technology.The nitrogen-vacancy center in diamond has been used to realize small-scale quantum information processing and quantum sensing under ambient conditions.A major barrier in the development of large-scale quantum information processing in diamond is the connection of nitrogen-vacancy spin registers by a quantum bus at room temperature.Given that diamond is expected to be an ideal spin transport material, the coherent transport of spin directly between the spin registers offers a potential solution.Yet, there has been no demonstration of spin transport in diamond due to difficulties in achieving spin injection and detection via conventional methods.Here, we exploit detailed knowledge of the paramagnetic defects in diamond to identify novel mechanisms to photoionize, transport, and capture spin-polarized electrons in diamond at room temperature.Having identified these mechanisms, we explore how they may be combined to realize an on-chip spin quantum bus.
The nitrogen-vacancy (NV) color center in diamond has rapidly emerged as an important solid-state system for quantum information processing. Whereas individual spin registers have been used to implement small-scale diamond quantum computing, the realization of a large-scale device requires the development of an on-chip quantum bus for transporting information between distant qubits. Here, we propose a method for coherent quantum transport of an electron and its spin state between distant NV centers. Transport is achieved by the implementation of spatial stimulated adiabatic Raman passage through the optical control of the NV center charge states and the confined conduction states of a diamond nanostructure. Our models show that, for two NV centers in a diamond nanowire, high-fidelity transport can be achieved over distances of order hundreds of nanometers in timescales of order hundreds of nanoseconds. Spatial adiabatic passage is therefore a promising option for realizing an on-chip spin quantum bus.
Spin defects in diamond are promising platforms for quantum sensing. The longest electron spin relaxation times (T1) at room temperature for solid-state defects are observed in nitrogen vacancy centers in diamond, which can reach 6.67 ms, and substitutional nitrogen ("P1 centers") in diamond, which exhibit a T1 of 2 ms. No other solid-state defect has exhibited millisecond-scale spin relaxation times at room temperature thus far. Here, we characterize the spin properties of the WAR5 defect in diamond with pulsed electron spin resonance. The observed T1 is one of the longest for solid-state spin defects: 0.97(27) ms at room temperature and 14.38(19) min at 4 K. The observed coherence time (T2) is 246(7) μs, which can be extended to 6.49(34) ms at 4 K with dynamical decoupling. Furthermore, we demonstrate optical spin polarization with a range of wavelengths from 405 nm to 500 nm and propose potential zero-phonon line candidates.
Among the possible defects that can occur in diamonds, one that draws attention is the nitrogen-vacancy (NV) center.Studied since the early 90s, in recent years, they became one of the most promising platforms for field applications of quantum technology at room temperature, especially for quantum sensing.They are sensitive to electric and magnetic fields, temperature, and strain, making these nanosensors a versatile platform for many applications.The NV center's spin state is easy to read and manipulate by optical means, and, most interestingly, it works well at room temperature, which facilitates its use.The great challenge to implement quantum protocols and quantum algorithms is the coherence time of the quantum states.The NV center stands out for having relatively high coherence times at room temperature.This dissertation presents measurements to characterize the electron spin coherence of NV centers in an ultrapure sample of diamond designed for quantum sensing applications.These measurements combine optical e magnetic resonance techniques.For that, a method was implemented using a conventional CCD camera and a clever imaging protocol, making it possible to perform various pulsed microwave experiments on the electron spin, such as Rabi oscillations and Hahn spin-echo, which were used for determining the characteristic relaxation times (T 1 and T 2 ).Results show that this system provides at least two readily accessible qubits that can be used in quantum protocols even at room temperature.
Quantum sensors encompass a diverse class of devices that exploit quantum coherence to detect weak or nanoscale signals. As their behavior is tied to physical constants, quantum sensors can achieve accuracy, repeatability, and precision approaching fundamental limits [1, 2]. As a result, these sensors have shown utility in a wide range of applications in both science and engineering leading to innovations. Among many solid-state spin systems, nitrogen-vacancy (NV) centers in diamonds have attracted considerable attention as a leading platform in many fields of quantum technologies, from quantum sensing to information processing and communication applications. They have superior physical properties, and their quantum coherence is preserved even at room temperature. The energy levels of NV centers are sensitive to magnetic fields, electric fields, strain, and temperature, and the spatial resolution is scalable from nanometers to millimeters. Therefore, diamond quantum sensors are distinctive sensors with multimodality and span scalable application fields. To realize an ideal quantum sensor for applications, the technical challenges in the sensor materials and the quantum control techniques, such as coherent microwave spin manipulation, effective optical spin-state initialization, and readout, have been developed. This chapter briefly explains the sensing principle using NV centers and then introduces sensor systems for biomedical applications, and monitoring of batteries for electric vehicles and internal power devices.
Efficient readout of individual electronic spins associated with atomlike impurities in the solid state is essential for applications in quantum information processing and quantum metrology. We demonstrate a new method for efficient spin readout of nitrogen-vacancy (NV) centers in diamond. The method is based on conversion of the electronic spin state of the NV to a charge-state distribution, followed by single-shot readout of the charge state. Conversion is achieved through a spin-dependent photoionization process in diamond at room temperature. Using NVs in nanofabricated diamond beams, we demonstrate that the resulting spin readout noise is within a factor of 3 of the spin projection noise level. Applications of this technique for nanoscale magnetic sensing are discussed.
Nitrogen-vacancy (NV) centers in diamond have become an important instrument for quantum sensing and quantum information science. However, the readout of NV spin state requires bulky optical setups, limiting fabrication of miniaturized compact devices for practical use. Here we realized photoelectrical detection of magnetic resonance as well as Rabi oscillations on a single-defect level. Furthermore, photoelectrical imaging of individual NV centers at room temperature was demonstrated, surpassing conventional optical readout methods by providing high imaging contrast and signal-to-noise ratio. These results pave the way toward fully integrated quantum diamond devices.