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arXiv:1509.06335 · Physical Review A

Reduction of the dc-electric-field sensitivity of circular Rydberg states using nonresonant dressing fields

You Ni, Peng Xu, J. D. D. Martin

Published Dec 21, 2015• 12 citations
arXivHTMLPDF

Abstract

Nonresonant dressing fields can make the transition frequency between two circular Rydberg states insensitive to second-order variations in the dc electric field. Perturbation theory can be used to establish the required dressing field amplitude and frequency. The same perturbative approach may be used to understand removal of the first-order dependence of the transition frequency on electric field about a bias dc electric field [Hyafil et al., Phys. Rev. Lett. 93, 103001 (2004)]. The directional alignment of the dressing and dc fields is critical in determining the electric field sensitivity of the dressed transition frequencies. This sensitivity is significantly larger for circular Rydberg states compared to low-angular momentum Rydberg states of Rb.

DOI
10.1103/physreva.92.063418

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Nonresonant dressing fields can make the transition frequency between two circular Rydberg states insensitive to second-order variations in the dc electric field. Perturbation theory can be used to establish the required dressing field amplitude and frequency. The same perturbative approach may be used to understand removal of the first-order dependence of the transition frequency on electric field about a bias dc electric field [Hyafil et al., Phys. Rev. Lett. 93, 103001 (2004)]. The directional alignment of the dressing and dc fields is critical in determining the electric field sensitivity of the dressed transition frequencies. This sensitivity is significantly larger for circular Rydberg states compared to low-angular momentum Rydberg states of Rb.
We propose a method for reducing the sensitivity of atomic ground-to-Rydberg transitions to stray dc electric fields, using microwave-induced dressing of Rydberg states. Calculations are presented for the Cs 90S1/290{S}_{1/2}90S1/2​ and 90P3/290{P}_{3/2}90P3/2​ states. With zero dc bias electric field, a two-frequency ac field is used to simultaneously reduce the sensitivity of both states to dc field variations. The sensitivity reduction is a factor of 95 for the 90S1/290{S}_{1/2}90S1/2​ state and a factor of 1600 for the 90P3/2,mJ=3/290{P}_{3/2},{m}_{J}=3/290P3/2​,mJ​=3/2 state. We also show how the two-frequency ac field can be used to cancel both second- and fourth-order terms in the polarizability of a single Rydberg state. These results are relevant to improving the stability of experiments that seek to excite Rydberg atoms in the proximity of charged surfaces.
A nonresonant microwave dressing field at 38.465GHz38.465\phantom{\rule{0.28em}{0ex}}\mathrm{GHz}38.465GHz was used to eliminate the static electric dipole moment difference between the 49s1/249{s}_{1/2}49s1/2​ and 48s1/248{s}_{1/2}48s1/2​ Rydberg states of 87{}^{87}87Rb in dc fields of $\ensuremath{\approx}1\phantom{\rule{0.28em}{0ex}}\mathrm{V}/\mathrm{cm}$. The reduced susceptibility to electric field fluctuations was measured using two-photon microwave spectroscopy. An anomalous spectral doublet is attributed to polarization ellipticity in the dressing field. The demonstrated ability to inhibit static dipole moment differences, while retaining sensitivity to high frequency fields, is applicable to sensors and/or quantum devices using Rydberg atoms.
Optical detection of Rydberg states using electromagnetically induced transparency (EIT) enables continuous measurement of electric fields in a confined geometry. In this paper, we demonstrate the formation of radio frequency (rf)-dressed EIT resonances in a thermal Rb vapour and show that such states exhibit enhanced sensitivity to dc electric fields compared to their bare counterparts. Fitting the corresponding EIT profile enables precise measurements of the dc field independent of laser frequency fluctuations. Our results suggest that space charges within the enclosed cell reduce electric field inhomogeneities within the interaction region.
Rydberg states of atoms and molecules are very sensitive to electric fields. This property makes them ideal electric-field sensors but is detrimental to applications of Rydberg states in quantum optics, quantum-information processing, and quantum simulation because of inhomogeneous Stark broadening and the resulting loss of quantum coherence. We demonstrate, with the example of Rydberg states of 39K^{39}\mathrm{K}39K, the existence of Rydberg-Rydberg transitions with extremely small differential dc Stark shifts, which we call dc-field-magic Rydberg-Rydberg transitions. These transitions hardly exhibit any Stark broadening, even when the electric-field strength varies by as much as $10\phantom{\rule{4pt}{0ex}}\mathrm{V}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$ over the experimental volume. We present a systematic study of dc-field-magic Rydberg-Rydberg transitions combining experiment and calculations and classify them in three main types, which should also be encountered in the other alkali-metal atoms, in alkaline-earth-metal atoms, and even in molecules. The observed insensitivity to dc electric fields does not reduce the interactions between Rydberg atoms, even if they are dominantly electric dipole-dipole in nature. Rydberg states coupled by dc-field-magic Rydberg-Rydberg transitions, therefore, have great potential as qubits.
We prepare and analyze Rydberg states with orbital quantum numbers ℓ≤6 using three-optical-photon electromagnetically induced transparency (EIT) and radio frequency (rf) dressing, and employ the high- ℓ states in electric-field sensing. Rubidium-85 atoms in a room-temperature vapor cell are first promoted into the 25F5/2 state via Rydberg-EIT with three infrared laser beams. Two rf dressing fields then (near-)resonantly couple the 25F, 25H(ℓ=5) , and 25I(ℓ=6) Rydberg states. The dependence of the rf-dressed Rydberg-state level structure on rf powers, rf and laser frequencies is characterized using EIT. Furthermore, we discuss the principles of dc-electric-field sensing using high- ℓ Rydberg states and experimentally demonstrate the method using test electric fields of ≲50 V/m induced via photo-illumination of the vapor-cell wall. We measure the highly nonlinear dependence of the dc-electric-field strength on the power of the photo-illumination laser. Numerical calculations, which reproduce our experimental observations well, elucidate the underlying physics. Our paper is relevant to high-precision spectroscopy of high- ℓ Rydberg states, Rydberg-atom-based electric-field sensing, and plasma electric-field diagnostics. Published by the American Physical Society 2024