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arXiv:1503.00025 · Physical Review B

Metal-insulator transition in a weakly interacting disordered electron system

Chinedu E. Ekuma, Shuxiang Yang, Hanna Terletska, Ka-Ming Tam, N. S. Vidhyadhiraja, Juana Moreno, Mark Jarrell

Published Nov 25, 2015• 19 citations
arXivHTMLPDF

Abstract

The interplay of interactions and disorder is studied using the Anderson-Hubbard model within the typical medium dynamical cluster approximation. Treating the interacting, nonlocal cluster self-energy $[{\mathrm{\ensuremath{\Sigma}}}_{c}[\stackrel{\ifmmode \tilde{}\else \~{}\fi{}}{\mathcal{G}}](i,j\ensuremath{\ne}i)]$ up to second order in the perturbation expansion of interactions, ${U}^{2}$, with a systematic incorporation of nonlocal spatial correlations and diagonal disorder, we explore the initial effects of electron interactions ($U$) in three dimensions. We find that the critical disorder strength (${W}_{c}^{U}$), required to localize all states, increases with increasing $U$; implying that the metallic phase is stabilized by interactions. Using our results, we predict a soft pseudogap at the intermediate $W$ close to ${W}_{c}^{U}$ and demonstrate that the mobility edge (${\ensuremath{\omega}}_{\ensuremath{\epsilon}}$) is preserved as long as the chemical potential, $\ensuremath{\mu}$, is at or beyond the mobility edge energy.

DOI
10.1103/physrevb.92.201114

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The interplay of interactions and disorder is studied using the Anderson-Hubbard model within the typical medium dynamical cluster approximation. Treating the interacting, nonlocal cluster self-energy [\ensuremathΣc[G\ifmmode~\else˜\fi](i,j\ensuremath≠i)][{\mathrm{\ensuremath{\Sigma}}}_{c}[\stackrel{\ifmmode \tilde{}\else \~{}\fi{}}{\mathcal{G}}](i,j\ensuremath{\ne}i)][\ensuremathΣc​[G\ifmmode~\else˜\fi​](i,j\ensuremath=i)] up to second order in the perturbation expansion of interactions, U2{U}^{2}U2, with a systematic incorporation of nonlocal spatial correlations and diagonal disorder, we explore the initial effects of electron interactions (UUU) in three dimensions. We find that the critical disorder strength (WcU{W}_{c}^{U}WcU​), required to localize all states, increases with increasing UUU; implying that the metallic phase is stabilized by interactions. Using our results, we predict a soft pseudogap at the intermediate WWW close to WcU{W}_{c}^{U}WcU​ and demonstrate that the mobility edge (\ensuremathω\ensuremathϵ{\ensuremath{\omega}}_{\ensuremath{\epsilon}}\ensuremathω\ensuremathϵ​) is preserved as long as the chemical potential, \ensuremathμ\ensuremath{\mu}\ensuremathμ, is at or beyond the mobility edge energy.
This work is devoted to the development of a systematic method for studying electron localization. The developed method is Typical Medium Dynamical Cluster Approximation (TMDCA) using the Anderson-Hubbard model. The TMDCA incorporates non-local correlations beyond the local typical environment in a self-consistent way utilizing the momentum resolved typical-density-of-states and the non-local hybridization function to characterize the localization transition. For the (non-interacting) Anderson model, I show that the TMDCA provides a proper description of the Anderson localization transition in one, two, and three dimensions. In three-dimensions, as a function of cluster size, the TMDCA systematically recovers the re-entrance behavior of the mobility edge and obtains the correct critical disorder strength for the various disorder configurations and the associated \textit{universal order-parameter-critical-exponent} β\betaβ and in lower-dimensions, the well-knowing scaling relations are reproduced in agreement with numerical exact results. The TMDCA is also extended to treat diagonal and off-diagonal disorder by generalizing the local Blackman-Esterling-Berk and the importance of finite cluster is demonstrated. It was further generalized for multiband systems. Applying the TMDCA to weakly interaction electronic systems, I show that incorporating Coulomb interactions into disordered electron system result in two competing tendencies: the suppression of the current due to correlations and the screening of the disorder leading to the homogenizing of the system. It is shown that the critical disorder strength (WcUW_c^UWcU​), required to localize all states, increases with increasing interactions (UUU); implying that the metallic phase is stabilized by interactions. Using the results, a soft pseudogap at the intermediate WWW close to WcUW_c^UWcU​ is predicted independent of filling and dimension, and I demonstrate in three-dimensions that the mobility edge is preserved as long as the chemical potential, μ\muμ, is at or beyond the mobility edge energy (ωϵ\omega_\epsilonωϵ​). A two-particle formalism of electron localization is also developed within the TMDCA and used to calculate the direct-current conductivity, enabling direct comparison with experiments. Note significantly, the TMDCA benchmarks well with numerical exact results with a dramatic reduction in computational cost, enabling the incorporation of material's specific details as such provide an avenue for the possibility of studying electron localization in real materials.
We study the Anderson-Hubbard model to examine the interplay between the disordered potential and the Hubbard interactions. We use the dynamical mean-field theory (DMFT) with an exact diagonalization as an impurity solver to effectively deal with the quantum fluctuations due to the local interactions. In order to characterize the paramagnetic metal-insulator transition in disordered systems, we compute the typical local density of states, as well as the arithmetically-averaged local density of states. Our approach is found to reproduce the characteristic features of the metal-insulator transition in infinite dimensions, such as the existence of the disorder-driven metallic phase for moderate values of disorder strength and interactions, as observed in earlier studies. In two dimensions, the system turns out to exhibit more insulating behavior when we increase the cluster size in the cellular DMFT. The metallic phase, which is induced from weak Mott insulators by the introduction of a disordered potential, is not observed in two dimensions.
Interplay of electron correlation and randomness is studied by using the Anderson-Hubbard model within the Hartree-Fock approximation. Under the coexistence of short-range interaction and diagonal disorder, we obtain the ground-state phase diagram in three dimensions, which includes an antiferromagnetic insulator, an antiferromagnetic metal, a paramagnetic insulator (Anderson-localized insulator) and a paramagnetic metal. Although only the short-range interaction is present in this model, we find unconventional soft gaps in the insulating phases irrespective of electron filling, spatial dimensions and long-range order, where the single-particle density of states (DOS) vanishes with a power-law scaling in one dimension (1D) or even faster in two dimensions (2D) and three dimensions (3D) toward the Fermi energy. We call it soft Hubbard gap. Moreover, exact-diagonalization results in 1D support the formation of the soft Hubbard gap beyond the mean-field level. The formation of the soft Hubbard gap cannot be attributed to a conventional theory by Efros and Shklovskii (ES) owing the emergence of soft gaps to the long-range Coulomb interaction. Indeed, based on a picture of multivalley energy landscape, we propose a phenomenological scaling theory, which predicts a scaling of the DOS in perfect agreement with the numerical results. We further discuss a correction of the scaling of the DOS by the long-range part of the Coulomb interaction, which modifies the scaling of Efros and Shklovskii. Furthermore, explicit formulae for the temperature dependence of the DC resistivity via variable-range hopping under the influence of the soft gaps are derived. Finally, we compare the present theory with experimental results of SrRu_{1-x}Ti_xO_3.
Quantum materials exhibit a rich dynamic of physical parameters, which, when combined, can lead to entirely different behaviors. These parameters constantly compete with each other, with the most influential parameters determining the state of the system. For example, in the case of metal–insulator transitions, electron–electron interactions compete with the kinetic energy of the electrons and disorder. Understanding these complex dynamics is crucial for both fundamental physics and the development of novel technological applications, particularly given the role of disorder in tuning critical temperatures, a property with significant potential benefit in the fabrication of new devices where temperature requirements are still the bottleneck. In this article, properties of the Mott metal–insulator transition within disordered electron systems are explored using the disordered Hubbard model, the simplest Hamiltonian for capturing the metal–insulator transition. The model solutions are obtained using the self-consistent statistical dynamical mean-field theory (statDMFT). statDMFT incorporates local electronic correlation effects while allowing for Anderson localization due to disorder.
The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean-field theory combined with typical medium theory, which is an effective theory of the Mott-Anderson metal-insulator transition. We mainly focus on the properties of the coexistence region associated with the Mott phase transition. For weak disorder, the coexistence region is found to be similar to that in the clean case. However, as we increase disorder, Anderson localization effects are responsible for shrinking the coexistence region, and at sufficiently strong disorder (approximately equal to twice the bare bandwidth) it drastically narrows, the critical temperature Tc{T}_{c}Tc​ abruptly goes to zero, and we observe a phase transition in the absence of a coexistence of the metallic and insulating phases. In this regime, the effects of interaction and disorder are found to be of comparable importance for charge localization.
We derive the disorder vs doping phase diagram of the doped Hubbard model via dynamical mean-field theory combined with typical medium theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven) metal-insulator transitions. We observe a transition from a metal to an Anderson-Mott insulator for increasing disorder strength at all interactions. In the weak correlation regime and rather small doping, the Anderson-Mott insulator displays properties which are similar to the ones found at half filling. In particular, this phase is characterized by the presence of empty sites. If we further increase either the doping or the correlation, however, an Anderson-Mott phase of a different kind arises for sharply weaker disorder strength. This phase occupies the largest part of the phase diagram in the strong-correlation regime and is characterized by the absence of the empty sites.