Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:1406.4727 · Journal of Physics B Atomic Molecular and Optical Physics

Optimal electrode geometries for 2-dimensional ion arrays with bi-layer ion traps

F. N. Krauth, Joseba Alonso, Jonathan Home

Published Dec 9, 2014• 9 citations
arXivHTMLPDF

Abstract

We investigate electrode geometries required to produce periodic 2-dimensional ion-trap arrays with the ions placed between two planes of electrodes. We present a generalization of previous methods for traps containing a single electrode plane to this new geometry, and show that for a given ion-electrode distance and applied voltages, the inter-ion distance can be reduced by a factor of up to 3 relative to single-plane traps. This represents an increase by a factor of 9 in the trap density and a factor of 27 in the exchange coupling between the oscillatory motion of neighboring ions. The resulting traps are also considerably deeper for bi-layer structures than for single-plane traps. These results could offer a useful path towards 2-dimensional ion arrays for quantum simulation. We also discuss issues with the fabrication of such traps.

DOI
10.1088/0953-4075/48/1/015001

Related papers

Optimal Surface-Electrode Trap Lattices for Quantum Simulation with Trapped Ions

Roman Schmied, Janus H. Wesenberg, Dietrich G. Leibfried

Trapped ions offer long internal state (spin) coherence times and strong interparticle interactions mediated by the Coulomb force. This makes them interesting candidates for quantum simulation of coupled lattices. To this end, it is desirable to be able to trap ions in arbitrary conformations with precisely controlled local potentials. We provide a general method for optimizing periodic planar radio-frequency electrodes for generating ion trapping potentials with specified trap locations and curvatures above the electrode plane. A linear-programming algorithm guarantees globally optimal electrode shapes that require only a single radio-frequency voltage source for operation. The optimization method produces final electrode shapes that are smooth and exhibit low fragmentation. Such characteristics are desirable for practical fabrication of surface-electrode trap lattices.

arXiv:0902.1686•Physical Review Letters•Jun 9, 2009•102 citations

Operation of a planar-electrode ion-trap array with adjustable RF electrodes

Muir Kumph, Philip C. Holz, Klaus Langer +4 more

One path to realizing systems of trapped atomic ions suitable for large-scale quantum computing and simulation is to create a two-dimensional (2D) array of ion traps. Interactions between nearest-neighbouring ions could then be turned on and off by tuning the ions' relative positions and frequencies. We demonstrate and characterize the operation of a planar-electrode ion-trap array. By driving the trap with a network of phase-locked radio-frequency resonators which provide independently variable voltage amplitudes we vary the position and motional frequency of a Ca + ion in two-dimensions within the trap array. Work on fabricating a miniaturised form of this 2D trap array is also described, which could ultimately provide a viable architecture for large-scale quantum simulations.

arXiv:1402.0791•New Journal of Physics•Feb 19, 2016•36 citations

Bilayer ion trap design for 2D arrays

Gavin Nop, Jonathan D. H. Smith, Daniel Stick +1 more

Abstract Junctions are fundamental elements that support qubit locomotion in two-dimensional ion trap arrays and enhance connectivity in emerging trapped-ion quantum computers. In surface ion traps they have typically been implemented by shaping radio frequency (RF) electrodes in a single plane to minimize the disturbance to the pseudopotential. However, this method introduces issues related to RF lead routing that can increase power dissipation and the likelihood of voltage breakdown. Here, we propose and simulate a novel two-layer junction design incorporating two perpendicularly rotoreflected (rotated, then reflected) linear ion traps. The traps are vertically separated, and create a trapping potential between their respective planes. The orthogonal orientation of the RF electrodes of each trap relative to the other provides perpendicular axes of confinement that can be used to realize transport in two dimensions. While this design introduces manufacturing and operating challenges, as now two separate structures have to be precisely positioned relative to each other in the vertical direction and optical access from the top is obscured, it obviates the need to route RF leads below the top surface of the trap and eliminates the pseudopotential bumps that occur in typical junctions. In this paper the stability of idealized ion transfer in the new configuration is demonstrated, both by solving the Mathieu equation analytically to identify the stable regions and by numerically modeling ion dynamics. Our novel junction layout has the potential to enhance the flexibility of microfabricated ion trap control to enable large-scale trapped-ion quantum computing.

arXiv:2310.07195•Quantum Science and Technology•Apr 16, 2024•2 citations

Optimization and implementation of a surface-electrode ion trap junction

Chi Zhang, Karan K. Mehta, Jonathan Home

Abstract We describe the design of a surface-electrode ion trap junction, which is a key element for large-scale ion trap arrays. A bi-objective optimization method is used for designing the electrodes, which maintains the total pseudo-potential curvature while minimizing the axial pseudo-potential gradient along the ion transport path. To facilitate the laser beam delivery for parallel operations in multiple trap zones, we implemented integrated optics on each arm of this X-junction trap. The layout of the trap chip for commercial foundry fabrication is presented. This work suggests routes to improving ion trap junction performance in scalable implementations. Together with integrated optical addressing, this contributes to modular trapped-ion quantum computing in interconnected two-dimensional arrays.

arXiv:2201.12579•New Journal of Physics•Jul 1, 2022•10 citations

TWO-DIMENSIONAL ARRAY OF ION TRAPS ON A PLANAR CHIP

Jinyin Wan, Yuzhu Wang, Liang Liu

We investigate a planar ion chip design with a two-dimensional array of linear ion traps for the scalable quantum information processor. The segmented electrodes reside in a single plane on a substrate and a grounded metal plate, a combination of appropriate rf and DC potentials are applied to them for stable ion confinement, and the trap axes are located above the surface at a distance controlled by the electrodes' lateral extent and the substrate's height as discussed. The potential distributions are calculated using static electric field qualitatively. This architecture is conceptually simple and many current microfabrication techniques are feasible for the basic structure. It may provide a promising route for scalable quantum computers.

Modern Physics Letters B•Jan 10, 2009•1 citation

Industrially microfabricated ion trap with 1 eV trap depth

Silke Auchter, Christopher J. Axline, Chiara Decaroli +12 more

Abstract Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric three-dimensional (3D) structures enable high trap depth, but microfabrication techniques are generally better suited to planar structures that produce less ideal conditions for trapping. We present an ion trap fabricated on stacked eight-inch wafers in a large-scale micro-electro-mechanical system microfabrication process that provides reproducible traps at a large volume. Electrodes are patterned on the surfaces of two opposing wafers bonded to a spacer, forming a 3D structure with 2.5 μm standard deviation in alignment across the stack. We implement a design achieving a trap depth of 1 eV for a 40Ca+ ion held at 200 μm from either electrode plane. We characterize traps, achieving measurement agreement with simulations to within ±5% for mode frequencies spanning 0.6–3.8 MHz, and evaluate stray electric field across multiple trapping sites. We measure motional heating rates over an extensive range of trap frequencies, and temperatures, observing 40 phonons/s at 1 MHz and 185 K. This fabrication method provides a highly scalable approach for producing a new generation of 3D ion traps.

arXiv:2202.08244•Quantum Science and Technology•May 17, 2022•23 citations
We investigate electrode geometries required to produce periodic 2-dimensional ion-trap arrays with the ions placed between two planes of electrodes. We present a generalization of previous methods for traps containing a single electrode plane to this new geometry, and show that for a given ion-electrode distance and applied voltages, the inter-ion distance can be reduced by a factor of up to 3 relative to single-plane traps. This represents an increase by a factor of 9 in the trap density and a factor of 27 in the exchange coupling between the oscillatory motion of neighboring ions. The resulting traps are also considerably deeper for bi-layer structures than for single-plane traps. These results could offer a useful path towards 2-dimensional ion arrays for quantum simulation. We also discuss issues with the fabrication of such traps.
Trapped ions offer long internal state (spin) coherence times and strong interparticle interactions mediated by the Coulomb force. This makes them interesting candidates for quantum simulation of coupled lattices. To this end, it is desirable to be able to trap ions in arbitrary conformations with precisely controlled local potentials. We provide a general method for optimizing periodic planar radio-frequency electrodes for generating ion trapping potentials with specified trap locations and curvatures above the electrode plane. A linear-programming algorithm guarantees globally optimal electrode shapes that require only a single radio-frequency voltage source for operation. The optimization method produces final electrode shapes that are smooth and exhibit low fragmentation. Such characteristics are desirable for practical fabrication of surface-electrode trap lattices.
One path to realizing systems of trapped atomic ions suitable for large-scale quantum computing and simulation is to create a two-dimensional (2D) array of ion traps. Interactions between nearest-neighbouring ions could then be turned on and off by tuning the ions' relative positions and frequencies. We demonstrate and characterize the operation of a planar-electrode ion-trap array. By driving the trap with a network of phase-locked radio-frequency resonators which provide independently variable voltage amplitudes we vary the position and motional frequency of a Ca + ion in two-dimensions within the trap array. Work on fabricating a miniaturised form of this 2D trap array is also described, which could ultimately provide a viable architecture for large-scale quantum simulations.
Abstract Junctions are fundamental elements that support qubit locomotion in two-dimensional ion trap arrays and enhance connectivity in emerging trapped-ion quantum computers. In surface ion traps they have typically been implemented by shaping radio frequency (RF) electrodes in a single plane to minimize the disturbance to the pseudopotential. However, this method introduces issues related to RF lead routing that can increase power dissipation and the likelihood of voltage breakdown. Here, we propose and simulate a novel two-layer junction design incorporating two perpendicularly rotoreflected (rotated, then reflected) linear ion traps. The traps are vertically separated, and create a trapping potential between their respective planes. The orthogonal orientation of the RF electrodes of each trap relative to the other provides perpendicular axes of confinement that can be used to realize transport in two dimensions. While this design introduces manufacturing and operating challenges, as now two separate structures have to be precisely positioned relative to each other in the vertical direction and optical access from the top is obscured, it obviates the need to route RF leads below the top surface of the trap and eliminates the pseudopotential bumps that occur in typical junctions. In this paper the stability of idealized ion transfer in the new configuration is demonstrated, both by solving the Mathieu equation analytically to identify the stable regions and by numerically modeling ion dynamics. Our novel junction layout has the potential to enhance the flexibility of microfabricated ion trap control to enable large-scale trapped-ion quantum computing.
Abstract We describe the design of a surface-electrode ion trap junction, which is a key element for large-scale ion trap arrays. A bi-objective optimization method is used for designing the electrodes, which maintains the total pseudo-potential curvature while minimizing the axial pseudo-potential gradient along the ion transport path. To facilitate the laser beam delivery for parallel operations in multiple trap zones, we implemented integrated optics on each arm of this X-junction trap. The layout of the trap chip for commercial foundry fabrication is presented. This work suggests routes to improving ion trap junction performance in scalable implementations. Together with integrated optical addressing, this contributes to modular trapped-ion quantum computing in interconnected two-dimensional arrays.
We investigate a planar ion chip design with a two-dimensional array of linear ion traps for the scalable quantum information processor. The segmented electrodes reside in a single plane on a substrate and a grounded metal plate, a combination of appropriate rf and DC potentials are applied to them for stable ion confinement, and the trap axes are located above the surface at a distance controlled by the electrodes' lateral extent and the substrate's height as discussed. The potential distributions are calculated using static electric field qualitatively. This architecture is conceptually simple and many current microfabrication techniques are feasible for the basic structure. It may provide a promising route for scalable quantum computers.
Abstract Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric three-dimensional (3D) structures enable high trap depth, but microfabrication techniques are generally better suited to planar structures that produce less ideal conditions for trapping. We present an ion trap fabricated on stacked eight-inch wafers in a large-scale micro-electro-mechanical system microfabrication process that provides reproducible traps at a large volume. Electrodes are patterned on the surfaces of two opposing wafers bonded to a spacer, forming a 3D structure with 2.5 μm standard deviation in alignment across the stack. We implement a design achieving a trap depth of 1 eV for a 40Ca+ ion held at 200 μm from either electrode plane. We characterize traps, achieving measurement agreement with simulations to within ±5% for mode frequencies spanning 0.6–3.8 MHz, and evaluate stray electric field across multiple trapping sites. We measure motional heating rates over an extensive range of trap frequencies, and temperatures, observing 40 phonons/s at 1 MHz and 185 K. This fabrication method provides a highly scalable approach for producing a new generation of 3D ion traps.