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arXiv:1211.6554 · Physical Review A

Techniques for microwave near-field quantum control of trapped ions

Ulrich Warring, C. Ospelkaus, Yves Colombe, K. R. Brown, Jason Amini, Martina Carsjens, Dietrich G. Leibfried, D. J. Wineland

Published Jan 31, 2013• 49 citations
arXivHTMLPDF

Abstract

Microwave near-field quantum control of spin and motional degrees of freedom of ${}^{25}$Mg${}^{+}$ ions can be used to generate two-ion entanglement, as recently demonstrated in Ospelkaus et al. [Nature 476, 181 (2011)]. Here, we describe additional details of the setup and calibration procedures for these experiments. We discuss the design and characteristics of the surface-electrode trap and the microwave system and compare experimental measurements of the microwave near fields with numerical simulations. Additionally, we present a method that utilizes oscillating magnetic-field gradients to detect micromotion induced by the ponderomotive radio-frequency potential in linear traps. Finally, we discuss the present limitations of microwave-driven two-ion entangling gates in our system.

DOI
10.1103/physreva.87.013437

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Microwave near-field quantum control of spin and motional degrees of freedom of 25{}^{25}25Mg+{}^{+}+ ions can be used to generate two-ion entanglement, as recently demonstrated in Ospelkaus et al. [Nature 476, 181 (2011)]. Here, we describe additional details of the setup and calibration procedures for these experiments. We discuss the design and characteristics of the surface-electrode trap and the microwave system and compare experimental measurements of the microwave near fields with numerical simulations. Additionally, we present a method that utilizes oscillating magnetic-field gradients to detect micromotion induced by the ponderomotive radio-frequency potential in linear traps. Finally, we discuss the present limitations of microwave-driven two-ion entangling gates in our system.
Trapped ions, together with superconducting qubits, are one of the two leading hardware platforms for scalable quantum information processing. The development of quantum computers represents a major technological breakthrough comparable to the introduction of classical computing. The benefits of this technology are currently limited by the technical capability to perform high fidelity entangling operations on the qubits. When gate fidelities surpass the fault-tolerance threshold it becomes possible, through error correction, to increase the system size to an arbitrary number of qubits. In this cumulative thesis we address some of the issues in the scalability of the trapped-ion quantum computer based on microwave near-fields. In this approach, gate operations on one or multiple ions are driven by an oscillating magnetic field generated by a current flowing through a conductor. In the first part of this work we discuss the design of traps toward the implementation of large scale systems. We introduce the basic design of a surface-electrode ion trap with embedded microwave conductors. The oscillating magnetic field required to perform the operations is generated by a single optimized conductor. We discuss the simulation and characterization of the magnetic field pattern, which is fixed by the microwave conductor design. In addition, we demonstrate the capability to simulate, fabricate and characterize a multilayer surface ion trap. Multilayer traps are a key aspect for scalability since they are necessary to achieve large system sizes, with many `ion registers', where the registers are interconnected by physically transporting ions between them. In the second part of this thesis we demonstrate the implementation of a two-qubit entangling gate and we explore the possibilities offered by quantum control methods to improve its fidelity. We perform an entangling gate on two 9Be+ ions and measure a Bell state fidelity of 98.2(1.2)%. Error characterization shows that the gate result is limited by technical issues connected to the ions' motional states. To reduce these errors we apply amplitude modulation of the gate microwave drive. After stabilization of the ions' radial modes, we obtain an amplitude modulated gate with infidelity in the 10^-3 range. The result is confirmed by analyzing the data using three different methods. Using additional dynamic decoupling techniques, these results could bring microwave near-field gates past the fault-tolerance threshold.
We present a new method of spin-motion coupling for trapped ions using microwaves and a magnetic field gradient oscillating close to the ions' motional frequency. We demonstrate and characterize this coupling experimentally using a single ion in a surface-electrode trap that incorporates current-carrying electrodes to generate the microwave field and the oscillating magnetic field gradient. Using this method, we perform resolved-sideband cooling of a single motional mode to its ground state.
Towards the goal of a large-scale quantum computer based on trapped ions, near-field microwaves represent a promising approach to perform the techni- cally challenging key operation of a two-qubit entangling gate. In this thesis we present the first microwave-driven two-qubit gate in 9Be+ ions employing a first-order field-independent qubit transition and a scalable surface-electrode ion trap at room temperature. We test the quality of the gate operation by producing a maximally entangled state and measuring the resulting state preparation fidelity in a reduced tomography procedure. For the best two- qubit gate achieved in the system we find this fidelity to be F = 98.2 ± 1.2 %. Following a comprehensive error analysis based on numerical simulations and experimentally determined input parameters, we identify current infidelity con- tributions of the apparatus. Here, the natural error source of the microwave near-field approach, namely fluctuating AC Zeeman shifts, could be reduced to the 10^−4 level due to the optimized design of the employed microwave con- ductor. As we find that the three largest errors can all be reduced upon purely technical improvements, higher fidelities are feasible in the future. Besides the gate realization, the thesis also comprises the initial characterization of the employed ion trap as well as the design and construction of a Raman laser at ∼ 313 nm which is utilized to perform near ground state cooling of radial modes of a single- and two-ion crystal. Here, ensuing heating rate measure- ments on a single-ion’s radial modes show good agreement with the electric- field noise spectral density expected from literature given the chosen mode frequency and nearest ion-to-electrode distance of 70 µm. Finally, we present the operation of a first multi-layer ion trap whose electrode layout features a 3-dimensional microwave conductor intended for performing microwave-driven two-qubit gates. Following a characterization of the resulting near-field pat- tern using a single ion as a local field probe, we find the multi-layer conductor to have significantly better field properties when compared to an equivalent single-layer design. Given these promising results, future work will focus on the integration of similar microwave circuitry in a multi-zone trap array as envisioned by the QCCD architecture.
We describe the design, fabrication, and testing of a surface-electrode ion trap, which incorporates microwave waveguides, resonators, and coupling elements for the manipulation of trapped ion qubits using near-field microwaves. The trap is optimised to give a large microwave field gradient to allow state-dependent manipulation of the ions' motional degrees of freedom, the key to multi-qubit entanglement. The microwave field near the centre of the trap is characterised by driving hyperfine transitions in a single laser-cooled 43Ca+ ion.
The key research aim of the present thesis is the building of a universal set of quantum gates for a long wavelength trapped-ion quantum information processor. It is desired to realise quantum computation using microwave and radio wave sources in a linear ion trap, where a static magnetic field gradient has been added to enhance motional and atomic state coupling. Furthermore, the qubit is constructed with the intrinsic use of superposition states generated with the help of constant microwave fields in the background: dressed states. This technique is essential for the shielding of the quantum operations against the unavoidable effects of magnetic noise. After reviewing the preliminary results and discussing briefly an auxiliary experimental technique intrinsic to the set-up, we introduce the magnetic gradient coupling and the dressed state scheme. We then proceed to illustrate how single and multi-qubit gates can be realised within such a system. Theoretical arguments are supplemented by numerical simulation and sources of experimental noise are taken into account.
Microwave-driven quantum logic gates in trapped-ion systems offer a scalable and laser-free alternative to optical control, with the potential for robust integration into surface-electrode trap architectures. In this work, we present a systematic design guideline for planar ion traps optimized for fast two-qubit microwave gates using chip-integrated conductors. We investigate two electrode configurations, one employing a single microwave line for driving σ transitions, and another with two symmetric lines for π transitions. Through finite-element simulations, we analyze ion height, magnetic field gradients, heating effects, and gate durations under realistic cryogenic conditions. Our results show that both configurations can achieve two-qubit gate times in the order of 10 μs for Be+9 and Ca+40 ions.